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5STP12N8500

型号：

5STP12N8500

描述：

相位控制晶闸管[ Phase Control Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

6 页

PDF大小：

171 K

下载PDF手册
V
DRM
= 8000  
VDSM = 8500  
IT(AV)M = 1200  
IT(RMS) = 1880  
V
V
A
A
A
V
Phase Control Thyristor  
ITSM  
V(T0)  
rT  
= 35×103  
= 1.25  
5STP 12N8500  
= 0.48  
mW  
Doc. No. 5SYA1044-02 Nov. 04  
·
·
·
·
·
Patented free-floating silicon technology  
Low on-state and switching losses  
Designed for traction, energy and industrial applications  
Optimum power handling capability  
Interdigitated amplifying gate  
Blocking  
Maximum rated values 1)  
Symbol Conditions  
5STP 12N8500 5STP 12N8200 5STP 12N7800  
VDSM, VRSM f = 5 Hz, tp = 10 ms  
VDRM, VRRM f = 50 Hz, tp = 10 ms  
8500 V  
8000 V  
9000 V  
8200 V  
7700 V  
7800 V  
7300 V  
8200 V  
VRSM  
tp = 5 ms, single pulse  
8600 V  
dV/dtcrit  
Exp. to 5360 V, Tvj = 90°C  
2000 V/µs  
Characteristic values  
Parameter  
Symbol Conditions  
IDSM VDSM, Tvj = 90°C  
IRSM VRSM, Tvj = 90°C  
min  
typ  
max  
1000  
400  
Unit  
Forward leakage current  
Reverse leakage current  
mA  
mA  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
90  
max  
Unit  
Mounting force  
Acceleration  
FM  
81  
108  
50  
kN  
a
a
Device unclamped  
Device clamped  
m/s2  
m/s2  
Acceleration  
Characteristic values  
Parameter  
100  
Symbol Conditions  
typ  
max  
Unit  
Weight  
m
2.9  
36  
kg  
Housing thickness  
Surface creepage distance  
Air strike distance  
H
FM = 90 kN, Ta = 25 °C  
35.3  
mm  
mm  
mm  
DS  
Da  
56  
22  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5STP 12N8500  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
A
Average on-state current  
RMS on-state current  
IT(AV)M  
IT(RMS)  
ITSM  
Half sine wave, Tc = 70°C  
1200  
1880  
35×103  
A
Peak non-repetitive surge  
current  
tp = 10 ms, Tvj = 90 °C,  
VD = VR = 0 V  
A
Limiting load integral  
I2t  
6.13×106 A2s  
38×103  
Peak non-repetitive surge  
current  
ITSM  
tp = 8.3 ms, Tvj = 90 °C,  
VD = VR = 0 V  
A
Limiting load integral  
Characteristic values  
Parameter  
I2t  
5.99×106 A2s  
Symbol Conditions  
min  
typ  
max  
Unit  
V
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
VT  
V(T0)  
rT  
IT = 1500 A, Tvj = 90 °C  
2
IT = 700 A - 2100 A, Tvj= 90 °C  
1.25  
0.48  
150  
125  
600  
800  
V
mW  
mA  
mA  
mA  
mA  
IH  
Tvj = 25 °C  
Tvj = 90 °C  
Tvj = 25 °C  
Tvj = 90 °C  
Latching current  
IL  
Switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Critical rate of rise of on-  
state current  
di/dtcrit  
Tvj = 90 °C,  
Cont.  
250  
A/µs  
ITRM = 2000 A,  
VD £ 5360 V,  
f = 50 Hz  
Cont.  
Critical rate of rise of on-  
state current  
di/dtcrit  
1000  
A/µs  
µs  
f = 1Hz  
IFG = A, tr = 0.5 µs  
Circuit-commutated turn-off tq  
time  
Tvj = 90°C, ITRM = 2000 A,  
VR = 200 V, diT/dt = -1 A/µs,  
600  
VD £ 0.67×VDRM, dvD/dt = 20V/µs  
Characteristic values  
Parameter  
Symbol Conditions  
min  
2800  
typ  
max  
Unit  
Recovery charge  
Qrr  
Tvj = 90°C, ITRM = A,  
VR = 200 V,  
3400  
µAs  
diT/dt = -1 A/µs  
Gate turn-on delay time  
tgd  
3
µs  
VD = 0.4×VRM, IFG = 2 A,  
tr = 0.5 µs, Tvj = 25 °C  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1044-02 Nov. 04  
page 2 of 6  
5STP 12N8500  
Triggering  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
max  
Unit  
Peak forward gate voltage VFGM  
Peak forward gate current IFGM  
Peak reverse gate voltage VRGM  
12  
10  
10  
V
A
V
Average gate power loss  
Characteristic values  
Parameter  
PG(AV)  
see Fig. 9  
Symbol Conditions  
typ  
max  
Unit  
Gate-trigger voltage  
VGT  
IGT  
Tvj = 25 °C  
2.6  
V
Gate-trigger current  
Tvj = 25 °C  
400  
mA  
V
Gate non-trigger voltage  
Gate non-trigger current  
VGD  
IGD  
VD = 0.4 x VDRM, Tvjmax = 90 °C  
VD = 0.4 x VDRM, Tvjmax = 90°C  
0.3  
10  
mA  
Thermal  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
Unit  
Operating junction  
temperature range  
Tvj  
90  
°C  
Storage temperature range Tstg  
Characteristic values  
Parameter  
-40  
140  
°C  
Symbol Conditions  
min  
max  
Unit  
Thermal resistance junction Rth(j-c)  
to case  
Double-side cooled  
Fm = 81...108 kN  
5.7  
K/kW  
Rth(j-c)A Anode-side cooled  
Fm = 81...108 kN  
11.4  
11.4  
1
K/kW  
K/kW  
K/kW  
K/kW  
Rth(j-c)C Cathode-side cooled  
Fm = 81...108 kN  
Thermal resistance case to Rth(c-h)  
heatsink  
Double-side cooled  
Fm = 81...108 kN  
Rth(c-h)  
Single-side cooled  
Fm = 81...108 kN  
2
Analytical function for transient thermal  
impedance:  
n
-t/ti  
Z
(t) = R (1-e )  
å
th(j-c)  
th i  
i=1  
i
1
2
3
4
Rth i(K/kW)  
3.400  
0.8685  
1.260  
0.1572  
0.680  
0.0219  
0.350  
0.0078  
ti(s)  
Fig. 1 Transient thermal impedance junction-to case.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1044-02 Nov. 04  
page 3 of 6  
5STP 12N8500  
On-state characteristic model:  
VT = A+ B×iT +C×ln(iT +1)+ D× IT  
Valid for iT = 200 – 4000 A  
A
B
C
D
1.9700e+0 -1.8000e-4 -3.0000e-1 6.2000e-2  
Fig. 2 On-state characteristics.  
Fig. 3 Max. on-state voltage characteristics  
Tj=125°C, 10ms half sine  
Tcase (°C)  
90  
Double-sided cooling  
DC  
180° rectangular  
180° sine  
85  
80  
75  
70  
120° rectangular  
0
200 400 600 800 1000 1200 1400 1600 1800  
ITAV (A)  
Fig. 4 On-state power dissipation vs. mean on-state  
Fig. 5 Max. permissible case temperature vs. mean  
current. Turn-on losses excluded.  
on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1044-02 Nov. 04  
page 4 of 6  
5STP 12N8500  
Fig. 6 Surge on-state current vs. pulse length. Half-  
Fig. 7 Surge on-state current vs. number of pulses.  
sine wave.  
Half-sine wave, 10 ms, 50Hz.  
IG (t)  
IGM  
IGon  
» 2..5 A  
³ 1.5 IGT  
100 %  
90 %  
IGM  
diG/dt ³ 2 A/ms  
tr  
£ 1 ms  
tp(IGM  
)
» 5...20 ms  
diG/dt  
IGon  
10 %  
tr  
t
tp (IGM  
)
tp (IGon  
)
Fig. 8 Recommended gate current waveform.  
Fig. 9 Max. peak gate power loss.  
I
RM(A)  
400  
300  
ITRM = 2000 A  
Tj = Tjmax  
max  
min  
200  
102  
90  
80  
70  
60  
50  
40  
30  
30  
1
2
3
4
5
6
7 8 910  
20  
-diT/dt (A/µs)  
Fig. 10 Recovery charge vs. decay rate of on-state  
Fig. 11 Peak reverse recovery current vs. decay rate  
current.  
of on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1044-02 Nov. 04  
page 5 of 6  
5STP 12N8500  
Fig. 12 Device Outline Drawing.  
Related application notes:  
Doc. Nr  
Titel  
5SYA2020  
5SYA2034  
5SYA 2036  
Design of RC-Snubber for Phase Control Applications  
Gate-drive Recommendations for PCT's  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Please refer to http://www.abb.com/semiconductors for actual versions.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1044-02 Nov. 04  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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