5STP 16F2800
On-state
ITAVM Max. average on-state current
ITRMS Max. RMS on-state current
1400 A
2210 A
Half sine wave, TC = 70°C
ITSM
Max. peak non-repetitive
surge current
18000 A
10 ms
8.3 ms
Tj = 125°C
19000 A
After surge:
I2t
Limiting load integral
10 ms
VD = VR = 0V
8.3 ms
VT
VT0
rT
On-state voltage
Threshold voltage
Slope resistance
Holding current
1.55 V
0.82 V
IT =
IT
2000 A
800 - 2400 A
Tj = 125°C
0.370
mΩ
IH
25-75 mA Tj = 25°C
15-60 mA Tj = 125°C
IL
Latching current
Switching
di/dtcrit Critical rate of rise of on-state
current
150 A/µs Cont. f = 50 Hz
VD ≤ 0.67⋅VDRM , Tj = 125°C
ITRM = 2000 A
300 A/µs 60 sec.
f = 50Hz
IFG = 2 A, tr = 0.5 µs
IFG = 2 A, tr = 0.5 µs
ITRM = 2000 A, Tj = 125°C
td
tq
Delay time
3.0 µs
≤
≤
VD = 0.4⋅VDRM
VD ≤ 0.67⋅VDRM
Turn-off time
400 µs
dvD/dt = 20V/µs VR > 200 V, diT/dt = -20 A/µs
Qrr
Recovery charge
min
3000 µAs
6000 µAs
max
Triggering
VGT
Gate trigger voltage
2.6 V
Tj = 25°
IGT
Gate trigger current
400 mA Tj = 25°
VGD
IGD
Gate non-trigger voltage
Gate non-trigger current
0.3 V
10 mA
12 V
10 A
10 V
3 W
VD =0.4 x VDRM
VD = 0.4 x VDRM
VFGM Peak forward gate voltage
IFGM Peak forward gate current
VRGM Peak reverse gate voltage
PG Gate power loss
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1022-03 Sep. 01
page 2 of 5
