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5STP52U5200

型号：

5STP52U5200

描述：

相位控制晶闸管[ Phase Control Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

6 页

PDF大小：

530 K

下载PDF手册
V
DRM
= 4400  
VDSM = 5200  
IT(AV)M = 4120  
I
T(RMS)
= 6470  
V
V
A
A
A
V
Phase Control Thyristor  
ITSM  
V
(T0)  
rT  
= 85.2×103  
5STP 52U5200  
= 1.04  
= 0.115  
mΩ  
Doc. No. 5SYA1042-02 Dec. 03  
• Patented free-floating silicon technology  
• Low on-state and switching losses  
• Designed for traction, energy and industrial applications  
• Optimum power handling capability  
• Interdigitated amplifying gate  
Blocking  
Maximum rated values 1)  
Symbol  
Conditions  
5STP 52U5200 5STP 52U5000 5STP 52U4600  
VDSM, VRSM f = 5 Hz, tp = 10 ms  
VDRM, VRRM f = 50 Hz, tp = 10 ms  
5200 V  
4400 V  
5700 V  
5000 V  
4200 V  
5500 V  
4600 V  
4000 V  
5100 V  
VRSM  
tp = 5 ms, single pulse  
dV/dtcrit  
Exp. to 0.67 x VDRM, Tvj = 110°C  
2000 V/µs  
Characteristic values  
Parameter  
Forward leakage current  
Reverse leakage current  
Symbol Conditions  
IDSM VDSM, Tvj = 110°C  
IRSM VRSM, Tvj = 110°C  
min  
typ  
max  
600  
600  
Unit  
mA  
mA  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
FM  
min  
min  
typ  
135  
max  
160  
50  
100  
Unit  
Mounting force  
Acceleration  
Acceleration  
Characteristic values  
Parameter  
120  
kN  
a
a
Device unclamped  
Device clamped  
m/s2  
m/s2  
Symbol Conditions  
typ  
max  
Unit  
Weight  
m
3.6  
kg  
Housing thickness  
Surface creepage distance  
Air strike distance  
H
DS  
Da  
FM = 135 kN, Ta = 25 °C  
34.4  
56  
22  
35.4  
mm  
mm  
mm  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5STP 52U5200  
On-state  
Maximum rated values 1)  
Parameter  
Average on-state current  
RMS on-state current  
Peak non-repetitive surge  
current  
Symbol Conditions  
min  
typ  
max  
Unit  
A
A
IT(AV)M  
IT(RMS)  
ITSM  
Half sine wave, Tc = 70°C  
4120  
6470  
tp = 10 ms, Tvj = 110 °C,  
VD = VR = 0 V  
85.2×103  
A
Limiting load integral  
I2t  
36.28×106 A2s  
90.3×103  
Peak non-repetitive surge  
ITSM  
tp = 8.3 ms, Tvj = 110 °C,  
VD = VR = 0 V  
A
current  
Limiting load integral  
Characteristic values  
Parameter  
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
I2t  
33.85×106 A2s  
Symbol Conditions  
min  
typ  
max  
1.38  
Unit  
V
V
mΩ  
mA  
mA  
mA  
mA  
VT  
V(T0)  
rT  
IT = 3000 A, Tvj = 110 °C  
IT = 2000 A - 6000 A, Tvj= 110 °C  
1.04  
0.115  
200  
100  
900  
IH  
Tvj = 25 °C  
Tvj = 110 °C  
Tvj = 25 °C  
Tvj = 110 °C  
Latching current  
IL  
700  
Switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
Unit  
A/µs  
Critical rate of rise of on-  
di/dtcrit  
Tvj = 110 °C,  
TRM = 3000 A,  
VD ≤ 0.67 VDRM  
FG = 2 A, tr = 0.5 µs  
Cont.  
f = 50 Hz  
Cont.  
250  
state current  
I
Critical rate of rise of on-  
state current  
di/dtcrit  
1000  
A/µs  
µs  
,
f = 1Hz  
I
Circuit-commutated turn-off tq  
time  
Tvj = 110°C, ITRM = 3000 A,  
700  
VR = 200 V, diT/dt = -5 A/µs,  
VD ≤ 0.67⋅VDRM, dvD/dt = 20V/µs  
Characteristic values  
Parameter  
Symbol Conditions  
min  
max  
Unit  
Recovery charge  
Qrr  
Tvj = 110°C, ITRM = 3000 A,  
12500  
µAs  
VR = 200 V,  
diT/dt = -5 A/µs  
Gate turn-on delay time  
tgd  
3
µs  
VD = 0.4⋅VRM, IFG = 2 A,  
tr = 0.5 µs, Tvj = 25 °C  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1042-02 Dec. 03  
page 2 of 6  
5STP 52U5200  
Triggering  
Maximum rated values 1)  
Parameter  
Peak forward gate voltage VFGM  
Peak forward gate current IFGM  
Peak reverse gate voltage VRGM  
Average gate power loss  
Characteristic values  
Parameter  
Symbol Conditions  
min  
min  
typ  
max  
Unit  
12  
10  
10  
V
A
V
PG(AV)  
see Fig. 9  
Symbol Conditions  
typ  
max  
Unit  
Gate-trigger voltage  
VGT  
Tvj = 25 °C  
2.6  
V
Gate-trigger current  
Gate non-trigger voltage  
Gate non-trigger current  
IGT  
VGD  
IGD  
Tvj = 25 °C  
VD = 0.4 x VDRM, Tvj = 110 °C  
VD = 0.4 x VDRM, Tvj = 110°C  
400  
mA  
V
mA  
0.3  
10  
Thermal  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
Tvj  
min  
typ  
typ  
max  
110  
Unit  
°C  
Operating junction  
temperature range  
Storage temperature range Tstg  
-40  
140  
°C  
Characteristic values  
Parameter  
Symbol Conditions  
min  
max  
Unit  
Thermal resistance junction Rth(j-c)  
Double-side cooled  
4
K/kW  
to case  
Fm = 120...160 kN  
Rth(j-c)A Anode-side cooled  
Fm = 120...160 kN  
8
K/kW  
K/kW  
K/kW  
K/kW  
Rth(j-c)C Cathode-side cooled  
8
Fm = 120...160 kN  
Thermal resistance case to Rth(c-h)  
heatsink  
Double-side cooled  
Fm = 120...160 kN  
0.8  
1.6  
Rth(c-h)  
Single-side cooled  
Fm = 120...160 kN  
Analytical function for transient thermal  
impedance:  
n
(t) = åR (1-e )  
-t/τi  
Z
th(j-c)  
th i  
i=1  
i
1
2
3
4
Rth i(K/kW)  
2.701  
0.9478  
0.816  
0.1249  
0.326  
0.0146  
0.160  
0.0032  
τi(s)  
Fig. 1 Transient thermal impedance junction-to case.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1042-02 Dec. 03  
page 3 of 6  
5STP 52U5200  
Max. on-state characteristic model:  
Max. on-state characteristic model:  
VT110  
VT25  
= A +B ⋅IT +CTvj ⋅ln(IT +1)+D ⋅ IT  
= A + BTvj ⋅IT +CTvj ⋅ln(IT +1)+ D ⋅ IT  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Valid for IT = 300 – 100000 A  
B110 C110  
Valid for IT = 300 – 100000 A  
A25  
B25  
C25  
D25  
-2.17×10-3  
A110  
D110  
2.43×10-3  
69.79×10-6 67.25×10-6  
160×10-3  
20.86×10-6 66.73×10-6 130.70×10-3  
Fig. 2 Max. on-state voltage characteristics  
Fig. 3 Max. on-state voltage characteristics  
Fig. 4 On-state power dissipation vs. mean on-state  
Fig. 5 Max. permissible case temperature vs. mean  
current. Turn-on losses excluded.  
on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1042-02 Dec. 03  
page 4 of 6  
5STP 52U5200  
Fig. 6 Surge on-state current vs. pulse length. Half-  
Fig. 7 Surge on-state current vs. number of pulses.  
sine wave.  
Half-sine wave, 10 ms, 50Hz.  
IG (t)  
IGM  
≈ 2..5 A  
≥ 1.5 IGT  
IGon  
100 %  
90 %  
IGM  
diG/dt ≥ 2 A/µs  
tr  
≤ 1 µs  
tp(IGM  
)
≈ 5...20 µs  
diG/dt  
IGon  
10 %  
tr  
t
tp (IGM  
)
tp (IGon  
)
Fig. 8 Recommended gate current waveform.  
Fig. 9 Max. peak gate power loss.  
Fig. 10 Recovery charge vs. decay rate of on-state  
Fig. 11 Peak reverse recovery current vs. decay rate  
current.  
of on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1042-02 Dec. 03  
page 5 of 6  
5STP 52U5200  
C
C
Fig. 12 Device Outline Drawing.  
Related application notes:  
Doc. Nr  
Titel  
5SYA2020  
5SYA2034  
5SYA 2036  
Design of RC-Snubber for Phase Control Applications  
Gate-drive Recommendations for PCT's  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Please refer to http://www.abb.com/semiconductors for actual versions.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1042-02 Dec. 03  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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