Diode Module
6R1MBi75P-160
Diode Module with Brake
Diode:1600V / 75A, IGBT:1400A/50A
Features
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Symbol
VRRM
VRSM
IO
Condition
Rating
1600
Unit
V
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average output current
1760
75
V
50Hz/60Hz sine wave
Tc=115°C
A
One cycle surge current
I2t
From rated load
From rated load
600
IFSM
I2t
A
A2s
1440
Operation junction temperature
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
-40 to +125
1400
±20
Tj
°C
V
VCES
VGES
IC
V
DC
Tc=25°C
50
A
Tc=75°C
Tc=25°C
Tc=75°C
35
1ms
100
ICP
A
70
Collector power disspation
1 device
240
PC
W
V
Repetitive peak reverse voltage
Operation junction temperature
1400
+150
-40 to +125
3000
2.0 to 2.5
VRRM
Tj
°C
°C
V
AC : 1 minute
M5 screw
Tstg
Viso
Storage junction temperature
Isolation voltage
N·m
Mounting screw torque
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
1.35
15
Unit
Fofward voltage
VFM
V
Tj=25°C, IFM=75A
Reverse current
IRRM
ICES
IGES
VCE(sat)
ton
mA
mA
nA
V
Tj=150°C, VR=VRRM
VGE=0V. VCE=1400V
VCE=0V. VGE=±20V
VGE=15V. IC=35A
Vcc=800V
Zero gate voltage Collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
1.0
200
2.8
2.4
0.35
0.25
0.45
0.08
1.2
µs
tr
0.6
Ic=35A
Turn-off time
toff
tf
1.0
VGE=±15V
0.3
RG=33ohm
Reverse current
IRRM
1.0
mA
Thermal characteristics
Item
Symbol
Condition
Min.
Typ.
Max.
0.16
0.96
0.70
0.08
Unit
Converter Per total loss
Per each device
°C/W
Thermal resistance
Rth(j-c)
Brake IGBT (1 device)
with thermal compound
°C/W
Thermal Resistance(Case to fine)
Rth(c-f)
