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HZN6.8ZMFA

型号:

HZN6.8ZMFA

描述:

硅平面齐纳二极管的浪涌吸收[ Silicon Planar Zener Diode for Surge Absorb ]

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

6 页

PDF大小:

49 K

HZN6.8ZMFA  
Silicon Planar Zener Diode for Surge Absorb  
REJ03G0032-0100Z  
(Previous: ADE-208-1456)  
Rev.1.00  
May.08. 2003  
Features  
HZN6.8ZMFA has four devices in a monolithic, and can absorb surge.  
VSON-5T Package is suitable for high density surface mounting.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
VSON-5T  
HZN6.8ZMFA  
68∗(∗ : Let to Month Code)  
Pin Arrangement  
1
5
2
3
1. Cathode  
2. Cathode  
3. Cathode  
4. Anode  
4
(Top View)  
5. Cathode  
Rev.1.00, May.08.2003, page 1 of 6  
HZN6.8ZMFA  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Pd *1  
Value  
150  
Unit  
mW  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
–55 to +150  
°C  
Note: 1. Four device total, See Fig.2.  
Electrical Characteristics *1  
(Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
7.00  
0.5  
25  
Unit  
V
Test Condition  
Zener voltage  
Reverse current  
Capacitance  
VZ  
IR  
6.47  
IZ = 5 mA, 40 ms pulse  
VR = 3.5 V  
µA  
pF  
C
VR = 0 V, f = 1 MHz  
IZ = 5 mA  
Dynamic resistance rd  
ESD-Capability *2 *3  
30  
25  
kV  
C = 150 pF, R = 330 , Both forward  
and reverse direction 10 pulse  
Notes: 1. Per one device.  
2. Failure criterion ; IR > 0.5 µA at VR = 3.5 V.  
3. Between cathode and anode.  
Month Code  
Month of Manufacture  
Month Code  
Month of Manufacture  
July  
Month Code  
January  
February  
March  
April  
A
B
C
D
E
F
G
H
J
August  
September  
October  
K
L
May  
November  
December  
June  
M
Rev.1.00, May.08.2003, page 2 of 6  
HZN6.8ZMFA  
Main Characteristic  
10-2  
10-3  
10-4  
10-5  
10-6  
250  
200  
150  
100  
50  
Unit: mm  
20h × 15w × 0.8t  
0.3  
1.75  
1.5  
1.0  
With polyimide board  
0
0
2
4
6
8
10  
0
50  
100  
150  
200  
Zener Voltage VZ (V)  
Ambient Temperature Ta (˚C)  
Fig.1 Zener current vs. Zener voltage  
Fig.2 Power Dissipation vs. Ambient Temperature  
104  
103  
PRSM  
Ta = 25  
nonrepetitive  
°C  
t
102  
10  
1.0  
105  
104  
103  
102  
101  
1.0  
Time  
t (s)  
Fig.3 Surge Reverse Power Ratings  
Rev.1.00, May.08.2003, page 3 of 6  
HZN6.8ZMFA  
Main Characteristic (cont.)  
104  
103  
102  
10  
1.0  
102  
101  
1.0  
10  
102  
103  
Time t (s)  
Fig.4 Transient Thermal Impedance  
Rev.1.00, May.08.2003, page 4 of 6  
HZN6.8ZMFA  
Package Dimensions  
As of January, 2003  
1.6 ± 0.05  
Unit: mm  
+0.1  
5 0.2  
0.05  
0.5  
0.5  
1.0 ± 0.1  
Package Code  
JEDEC  
VSON-5T  
JEITA  
Mass (reference value)  
0.002 g  
Rev.1.00, May.08.2003, page 5 of 6  
HZN6.8ZMFA  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with  
them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of  
nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they  
do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.  
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts,  
programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these  
materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers  
contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed  
herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page  
(http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information  
as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage,  
liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially  
at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained  
herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.  
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be  
imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.  
http://www.renesas.com  
Copyright © 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.  
Colophon 0.0  
Rev.1.00, May.08.2003, page 6 of 6  
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