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PYX28C64X-25L32MB

型号：

PYX28C64X-25L32MB

描述：

8K ×8的EEPROM[ 8K x 8 EEPROM ]

品牌：

PYRAMID[ PYRAMID SEMICONDUCTOR CORPORATION ]

页数：

11 页

PDF大小：

148 K

下载PDF手册
PYX28C64  
8K x 8 EEPROM  
FEATURES  
Access Times of 200, 250, 300 and 350 ns  
Single 5V±10% Power Supply  
Software Data Protection  
Fully TTL Compatible Inputs and Outputs  
Endurance:10,000or100,000Cycles  
Data Retention: 100 Years  
Simple Byte and Page Write  
Low Power CMOS:  
- 60 mA Active Current  
- 200 µA Standby Current  
Available in the following Packages:  
– 32-Pin Ceramic LCC (450 x 550 mils)  
– 28-Pin 600 mil Ceramic DIP  
Fast Write Cycle Times  
DESCRIPTION  
PIN CONFIGURATIONS  
The PYX28C64 is a 5 Volt 8Kx8 EEPROM using floating  
gate CMOS Technology. The device supports 64-byte  
pagewriteoperation. ThePYX28C64featuresDATAand  
Toggle Bit Polling as well as a system software scheme  
used to indicate early completion of a Write Cycle. The  
device also includes user-optional software data protec-  
tion. Endurance is 10,000 or 100,000 Cycles and Data  
Retentionis100Years. Thedeviceisavailableina32-Pin  
LCC package as well as a 28-Pin 600 mil wide Ceramic  
DIP.  
DIP (C5-1)  
FUNCTIONAL BLOCK DIAGRAM  
LCC (L6)  
Document # EEPROM101 REV B  
Revised July 2007  
1
PYX28C64  
MAXIMUMRATINGS(1)  
Symbol  
Parameter  
Value  
Unit  
Symbol  
Parameter  
Value  
Unit  
VCC  
Power Supply Pin with  
Respect to GND  
–0.3 to +6.25  
V
TBIAS  
TemperatureUnder  
Bias  
–55 to +125  
°C  
TerminalVoltagewith  
Respect to GND  
(up to 6.25V)  
–0.5 to  
+6.25  
TSTG  
PT  
StorageTemperature  
PowerDissipation  
DCOutputCurrent  
–65 to +150  
°C  
W
VTERM  
TA  
V
1.0  
50  
IOUT  
mA  
OperatingTemperature  
–55 to +125 °C  
CAPACITANCES(4)  
RECOMMENDED OPERATING  
VCC = 5.0V, TA = 25°C, f = 1.0MHz  
TEMPERATURE AND SUPPLY VOLTAGE  
Ambient  
Temperature  
Grade(2)  
GND  
Symbol  
Parameter  
Conditions Typ. Unit  
VCC  
Military  
5.0V ± 10%  
CIN  
–55°Cto+125°C  
0V  
VIN = 0V  
pF  
pF  
InputCapacitance  
10  
10  
COUT  
VOUT = 0V  
OutputCapacitance  
DC ELECTRICAL CHARACTERISTICS  
Overrecommendedoperatingtemperatureandsupplyvoltage(2)  
P5C164  
Symbol  
Parameter  
TestConditions  
Unit  
Min  
Max  
VIH  
VIL  
2.0  
VCC +0.3  
V
V
InputHighVoltage  
InputLowVoltage  
–0.5(3)  
0.8  
VCC –0.2  
VCC +0.5  
VHC  
VLC  
V
V
CMOS Input High Voltage  
CMOS Input Low Voltage  
–0.5(3)  
0.2  
0.4  
OutputLowVoltage  
(TTLLoad)  
VOL  
V
V
IOL = +8 mA, VCC = Min.  
IOH = –4 mA, VCC = Min.  
OutputHighVoltage  
(TTLLoad)  
VOH  
2.4  
VCC = Max.  
ILI  
–10  
+10  
+10  
µA  
InputLeakageCurrent  
OutputLeakageCurrent  
VIN = GND to VCC  
VCC = Max., CE = VIH,  
–10  
___  
µA  
ILO  
VOUT = GND to VCC  
CE ≥ VIH, OE = VIL,  
VCC= Max,  
f = Max., Outputs Open  
Standby Power Supply  
Current(TTLInputLevels)  
ISB  
3
mA  
CE ≥ VHC,  
Standby Power Supply  
Current  
(CMOSInputLevels)  
VCC= Max,  
ISB1  
___  
___  
250  
µA  
f = 0, Outputs Open  
VIN ≤ VLC or VIN ≥ VHC  
CE = OE = VIL,  
WE = VIH,  
All I/O's = Open,  
Inputs = VCC = 5.5V  
SupplyCurrent  
ICC  
60  
mA  
Notes:  
2. Extended temperature operation guaranteed with 400 linear feet per  
minute of air flow.  
3. Transient inputs with VIL and IIL not more negative than –3.0V and  
–100mA, respectively, are permissible for pulse widths up to 20ns.  
4. This parameter is sampled and not 100% tested.  
1. Stresses greater than those listed under MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only  
and functional operation of the device at these or any other conditions  
above those indicated in the operational sections of this specification  
is not implied. Exposure to MAXIMUM rating conditions for extended  
periods may affect reliability.  
Document # EEPROM101 REV B  
Page 2 of 11  
PYX28C64  
AC ELECTRICAL CHARACTERISTICS—READ CYCLE  
(VCC = 5V ± 10%, All Temperature Ranges)(2)  
-200  
-250  
-300  
-350  
Symbol  
Parameter  
Unit  
Min Max Min Max Min Max Min Max  
tAVAV Read Cycle Time  
200  
250  
300  
350  
ns  
350 ns  
350 ns  
100 ns  
ns  
tAVQV Address Access Time  
200  
200  
100  
250  
250  
100  
300  
300  
100  
tELQV Chip Enable Access Time  
tOLQV Output Enable Access Time  
tELQX Chip Enable to Output in Low Z  
tEHQZ Chip Disable to Output in High Z  
tOLQX Output Enable to Output in Low Z  
tOHQZ Output Disable to Output in High Z  
tAVQX Output Hold from Address Change  
10  
10  
0
10  
10  
0
10  
10  
0
10  
10  
0
80  
80  
80  
80  
80  
80  
80  
ns  
ns  
ns  
ns  
80  
tPU  
tPD  
Chip Enable to Power Up Time  
250  
50  
250  
50  
250  
50  
250 ns  
50 ns  
Chip Disable to Power Down Time  
TIMING WAVEFORM OF READ CYCLE  
Document # EEPROM101 REV B  
Page 3 of 11  
PYX28C64  
AC CHARACTERISTICS—WRITE CYCLE  
(VCC = 5V ± 10%, All Temperature Ranges)(2)  
-200  
-250  
-300  
-350  
Symbol  
Parameter  
Write Cycle Time  
Unit  
Min Max Min Max Min Max Min Max  
tWHWL1  
tEHEL1  
tAVEL  
tAVWL  
tELA X  
10  
10  
10  
10  
ms  
Address Setup Time  
Address Hold Time  
Write Setup Time  
20  
20  
20  
20  
ns  
ns  
150  
150  
150  
150  
tWLAX  
tWLEL  
tELWL  
0
0
0
0
0
0
0
0
ns  
ns  
ns  
ns  
ns  
tWHEH Write Hold Time  
tOHEL  
Setup Time  
20  
20  
150  
20  
20  
150  
20  
20  
150  
20  
20  
150  
OE  
OE  
WE  
tOHWL  
tWHOL  
tELEH  
Hold Time  
Pulse Width  
tWLWH  
tDVEH  
tDVWH  
tEHDX  
Data Setup Time  
Data Hold Time  
50  
10  
50  
10  
50  
10  
50  
10  
ns  
ns  
µs  
tWHDX  
tEHEL2  
tWHWL2  
tELWL  
Byte Load Cycle Time  
0.2  
2
0.2  
2
0.2  
2
0.2  
2
Setup Time  
1
1
1
1
1
1
1
1
µs  
µs  
µs  
µs  
ms  
ns  
V
CE  
tOVHWL Output Setup Time  
tEHWH  
tWHOH  
Hold Time  
Hold Time  
1
1
1
1
CE  
OE  
1
1
1
1
tOHAV Erase Time  
200  
150  
12  
200  
150  
12  
200  
150  
12  
200  
150  
12  
tWLWH2 Chip Erase Time  
VH  
High Voltage for Chip Clear  
13  
13  
13  
13  
Document # EEPROM101 REV B  
Page 4 of 11  
PYX28C64  
TIMING WAVEFORM OF BYTE WRITE CYCLE (CE CONTROLLED)  
TIMING WAVEFORM OF BYTE WRITE CYCLE (WE CONTROLLED)  
Document # EEPROM101 REV B  
Page 5 of 11  
PYX28C64  
TIMING WAVEFORM OF PAGE WRITE CYCLE  
TIMING WAVEFORM OF CHIP CLEAR CYCLE  
Document # EEPROM101 REV B  
Page 6 of 11  
PYX28C64  
WRITE SEQUENCE FOR SOFTWARE  
DATA PROTECTION  
SOFTWARE SEQUENCE TO  
DE-ACTIVATE SOFTWARE DATA  
PROTECTION  
Document # EEPROM101 REV B  
Page 7 of 11  
PYX28C64  
AC TEST CONDITIONS  
TRUTH TABLE  
InputPulseLevels  
GND to 3.0V  
10ns  
Mode  
I/O  
CE  
OE  
WE  
Input Rise and Fall Times  
InputTimingReferenceLevel  
OutputTimingReferenceLevel  
OutputLoad  
Read  
VIL  
VIL  
VIL  
X
VIL  
VH  
VIH  
VIL  
X
VIH  
VIL  
VIL  
X
DOUT  
1.5V  
Chip clear  
Byte write  
Write inhibit  
Write inhibit  
Standby  
X
1.5V  
DIN  
See Fig. 1  
High Z/DOUT  
High Z/DOUT  
High Z  
X
VIH  
X
VIH  
X
FIGURE 1. OUTPUT LOAD  
Document # EEPROM101 REV B  
Page 8 of 11  
PYX28C64  
ORDERING INFORMATION  
ENDURANCE  
DEVICE  
MINIMUM ENDURANCE  
PYX28C64  
10,000 cycles (Standard)  
PYX28C64X 100,000 cycles (High Endurance)  
Document # EEPROM101 REV B  
Page 9 of 11  
PYX28C64  
Pkg #  
SIDE BRAZED DUAL IN-LINE PACKAGE (600 mils)  
C5-1  
# Pins  
28 (600 mil)  
Symbol  
Min  
-
0.014  
0.045  
0.008  
-
Max  
A
b
b2  
C
D
E
0.232  
0.026  
0.065  
0.018  
1.490  
0.610  
0.500  
eA  
e
0.600 BSC  
0.100 BSC  
L
0.125  
0.200  
Q
S1  
S2  
0.015  
0.005  
0.005  
0.060  
-
-
RECTANGULAR LEADLESS CHIP CARRIER  
Pkg #  
# Pins  
Symbol  
A
L6  
32  
Min  
Max  
0.060  
0.050  
0.022  
0.442  
0.075  
0.065  
0.028  
0.458  
A1  
B1  
D
D1  
D2  
D3  
E
0.300 BSC  
0.150 BSC  
-
0.458  
0.560  
0.540  
E1  
E2  
E3  
e
h
j
0.400 BSC  
0.200 BSC  
-
0.558  
0.050 BSC  
0.040 REF  
0.020 REF  
L
L1  
L2  
0.045  
0.045  
0.075  
0.055  
0.055  
0.095  
ND  
NE  
7
9
Document # EEPROM101 REV B  
Page 10 of 11  
PYX28C64  
REVISIONS  
DOCUMENTNUMBER:  
DOCUMENTTITLE:  
EEPROM101  
PYX28C64 8K x 8 EEPROM  
ORIG. OF  
CHANGE  
ISSUE  
DATE  
REV.  
DESCRIPTIONOFCHANGE  
OR  
Jul-06  
JDB  
NewDataSheet  
A
B
May-07  
Jul-07  
JDB  
JDB  
RenameddevicefromP5C164toP6C28C64  
RenameddevicefromP6C28C64toPYX28C64  
Document # EEPROM101 REV B  
Page 11 of 11  
厂商 型号 描述 页数 下载

PYRAMID

 		PYX28C010-12CWMB [ EEPROM, 128KX8, 120ns, Parallel, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32 ] 12 页

PYRAMID

 		PYX28C010-12L32M [ EEPROM, 128KX8, 120ns, Parallel, CMOS, CQCC32, 0.550 X 0.450 INCH, CERAMIC, LCC-32 ] 12 页

PYRAMID

 		PYX28C010-15CWMB [ EEPROM, 128KX8, 150ns, Parallel, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32 ] 12 页

PYRAMID

 		PYX28C010-15L32MB [ EEPROM, 128KX8, 150ns, Parallel, CMOS, CQCC32, 0.550 X 0.450 INCH, CERAMIC, LCC-32 ] 12 页

PYRAMID

 		PYX28C010-20CWM [ EEPROM, 128KX8, 200ns, Parallel, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32 ] 12 页

PYRAMID

 		PYX28C010-25L32M [ EEPROM, 128KX8, 250ns, Parallel, CMOS, CQCC32, 0.550 X 0.450 INCH, CERAMIC, LCC-32 ] 12 页

PYRAMID

 		PYX28C010-25L32MB [ EEPROM, 128KX8, 250ns, Parallel, CMOS, CQCC32, 0.550 X 0.450 INCH, CERAMIC, LCC-32 ] 12 页

PYRAMID

 		PYX28C64 8K ×8的EEPROM[ 8K x 8 EEPROM ] 11 页

PYRAMID

 		PYX28C64-20CWM 8K ×8的EEPROM[ 8K x 8 EEPROM ] 11 页

PYRAMID

 		PYX28C64-20CWMB 8K ×8的EEPROM[ 8K x 8 EEPROM ] 11 页

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