STP5NB90
STP5NB90FP
N - CHANNEL 900V - 2.3
Ω
- 5A - TO-220/TO-220FP
PowerMESH
MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STP5NB90
STP5NB90FP
900 V
900 V
< 2.5 Ω
< 2.5
Ω
5 A
5 A
■
■
■
■
■
TYPICAL RDS(on) = 2.3
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
3
2
2
1
DESCRIPTION
1
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
UNINTERRUPTIBLE POWER SUPPLY(UPS)
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP5NB90FP
Unit
STP5NB90
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
900
900
V
V
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
30
V
±
5
5(*)
3.1(*)
20
A
ID
3.1
20
A
IDM ( )
A
•
Ptot
Total Dissipation at Tc = 25 oC
125
1.0
4.5
40
W
Derating Factor
0.32
4.5
W/oC
V/ns
V
oC
oC
dv/dt( ) Peak Diode Recovery voltage slope
1
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
2000
-65 to 150
150
Max. Operating Junction Temperature
•
≤5
Α, ≤ µ ≤ ≤
di/dt 200 A/ s, VDD V(BR)DSS, Tj TJMAX
( ) Pulse width limited by safe operating area
( 1) ISD
(*) Limited only by maximum temperature allowed
1/6
September 1998
