NPN SILICON TRANSISTOR
9014
TO 92
FEATURES
1.EMITTER
2.BASE
Power dissipation
PCM : 0.4
W
A
Tamb=25
Collector current
ICM : 0.1
3.COLLECTOR
1 2 3
Collector-base voltage
V(BR)CBO : 50
V
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
50
45
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
V(BR)CBO
Ic= 100
A
IE=0
Collector-emitter breakdown voltage V(BR)CEO
Ic= 0. 1 mA IB=0
V
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
V
IE= 100
A
IC=0
IE=0
IB=0
IC=0
VCB=50 V ,
VCE=35 V ,
0.1
0.1
0.1
1000
0.3
1
A
Collector cut-off current
ICEO
A
Emitter cut-off current
IEBO
VEB=
VCE=
3
5
V
A
DC current gain(note)
HFE
V, IC= 1mA
60
1
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
IC= 100mA, IB= 5 mA
IC= 100 mA, IB= 5mA
V
V
VCE= 5 V, IC= 10mA
f =30MHz
Transition frequency
150
MHz
fT
CLASSIFICATION OF HFE(1)
Rank
A
B
C
D
Range
60-150
100-300
200-600
400-1000
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
