PolarHTTM HiPerFET
Power MOSFET
VDSS = 150 V
ID25 = 42 A
RDS(on) = 26 mΩ
IXFC 96N15P
ISOPLUS220TM
trr
< 200 ns
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Recovery Diode, Avalanche Rated
ISOPLUS 220TM
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
150
150
V
V
G
VGS
VGSM
Continuous
Transient
20
30
V
V
D
S
Isolated back surface*
ID25
IDM
TC = 25°C
42
250
A
A
TC = 25°C, pulse width limited by TJM
G = Gate
S = Source
D = Drain
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
60
40
1.0
A
mJ
J
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 4 Ω
,
10
V/ns
Features
z Silicon chip on Direct-Copper-Bond
substrate
TC = 25°C
120
W
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
z Low drain to tab capacitance(<35pF)
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
TL
FC
1.6 mm (0.062 in.) from case for 10 s
Mounting force
300
°C
N/lb
11...65/2.4...11
VISOL
50/60 Hz, 1 minute
2500
~V
g
z Fast intrinsic Rectifier
Weight
3
Applications
z
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
z
z
Symbol
Test Conditions
Characteristic Values
power supplies
DC choppers
z AC motor control
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
z
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 4 mA
VGS = 20 VDC, VDS = 0
150
V
V
3.0
5.0
Advantages
Easy assembly: no screws, or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
z
100
nA
z
IDSS
VDS = VDSS
VGS = 0 V
25
300
μA
μA
z
TJ = 150 °C
z
(low EMI)
RDS(on)
VGS = 10 V, ID = 48 A, Note 1
26 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
DS99240E(03/06)
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