IXSR 35N120BD1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
IC= IT; VCE = 10 V,
16
23
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Ciss
Coss
Crss
3600
315
75
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Qg
120
33
nC
nC
nC
Qge
Qgc
IC = IT, VGE = 15 V, VCE = 0.5 VCES
49
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
36
27
ns
ns
IC = IT, VGE = 15 V, L = 100 µH,
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
VCE = 0.8 VCES, RG = 2.7 Ω
160 300 ns
180 300 ns
4 no connection
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Dim.
Millimeter
Inches
Eoff
5
9
mJ
Min. Max. Min. Max.
A
A12
4.83 5.21 .190 .205
2.29 2.54 .090 .100
1.91 2.16 .075 .085
1.14 1.40 .045 .055
1.91 2.13 .075 .084
2.92 3.12 .115 .123
0.61 0.80 .024 .031
20.80 21.34 .819 .840
15.75 16.13 .620 .635
td(on)
tri
38
29
ns
ns
mJ
ns
ns
A
Inductive load, TJ = 125°C
IC = IT, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = 2.7 Ω
b
Eon
td(off)
tfi
6
b
b12
240
340
C
D
E
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
e
5.45 BSC
.215 BSC
Eoff
9
mJ
L
19.81 20.32 .780 .800
L1
3.81 4.32 .150 .170
RthJC
RthCK
0.5 K/W
K/W
Q
5.59 6.20 .220 .244
4.32 4.83 .170 .190
R
0.15
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IT, VGE = 0 V,
2.75
1.85
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IRM
trr
IF = IT, VGE = 0 V, -diF/dt = 100 A/µs
VR = 100 V
7
14.3
A
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V
40
ns
RthJC
0.83 K/W
Note: 1. IT = 35A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
