IXSR 40N60CD1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS 247 (IXSR) OUTLINE
IC = IT; VCE = 10 V,
16
23
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
3700
440
60
pF
pF
pF
VGS = 0 V, VDS ,25 V, = f = 1 MHz
Qg
190
45
nC
nC
nC
Qge
Qgc
IC = IT, VGE = 15 V, VCE = 0.5 VCES
88
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
50
50
ns
ns
IC = IT, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 2.7 W
70
70
1.0
140 ns
120 ns
1.7 mJ
Dim.
Millimeter
Inches
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
Min. Max. Min. Max.
,
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Eoff
td(on)
tri
50
50
ns
ns
mJ
ns
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
Inductive load, TJ = 125°C
IC = IT, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 2.7 W
Remarks: Switching times may
Eon
td(off)
tfi
2.2
140
140
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
ns
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
4.32
Eoff
1.7
mJ
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
RthJC
RthCK
0.6 K/W
K/W
S
T
U
13.21 13.72
15.75 16.26
1.65
.520 .540
.620 .640
.065 .080
0.15
3.03
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = IT, VGE = 0 V,
1.8
2.5
V
Pulse test £ 300 ms, duty cycle d £ 2 %
IRM
trr
IF = IT, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
2
A
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
35
ns
RthJC
1.15 K/W
Note: 1. IT = 40A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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