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IXSN80N60BD1

型号：

IXSN80N60BD1

描述：

IGBT与二极管短路SOA能力[ IGBT with Diode Short Circuit SOA Capability ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

594 K

下载PDF手册
IGBT with Diode  
Short Circuit SOA Capability  
IXSN 80N60BD1 VCES  
IC25  
= 600 V  
= 160 A  
VCE(sat) = 2.5 V  
tfi = 180 ns  
C
G
E
PreliminaryDataSheet  
E
Symbol  
Test Conditions  
Maximum Ratings  
miniBLOC, SOT-227 B  
E153432  
E
V C E S  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
A
G
TJ = 25°C to 150°C; RGE = 1 MΩ  
VG E S  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
IC25  
IL  
TC = 25°C (Silicon chip capability)  
160  
100  
A
A
C
C = Collector  
E = Emitter c  
Lead current limit (RMS)  
E = Emitter c,  
G = Gate,  
IC90  
ICM  
TC = 90°C  
80  
A
A
TC = 25°C, 1 ms  
300  
c Either Emitter terminal can be used as  
Main or Kelvin Emitter  
SSOA  
(RBSOA)  
V
= 15 V, TVJ = 125°C, RG = 5 Ω  
I
= 160  
A
µs  
W
CGlaEmped inductive load  
@C0M.8 VCES  
10  
Features  
tSC  
(SCSOA)  
V = 15 V, VCE = 360 V, TJ = 125°C  
RGGE= 22 Ω, non repetitive  
TC = 25°C  
z
International standard package  
z
Aluminium-nitride isolation  
PC  
420  
- high power dissipation  
z
Isolation voltage 3000 V~  
VISOL  
50/60 Hz  
ISOL ≤ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
z
UL registered E 153432  
I
z
Low VCE(sat)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
- for minimum on-state conduction  
TJM  
Tstg  
losses  
z
Fast Recovery Epitaxial Diode  
- short trr and IRM  
Low collector-to-case capacitance  
-55 ... +150  
Md  
Mounting torque  
0.4/6 Nm/lb.in.  
30  
z
(< 60 pF)  
Weight  
g
- reduced RFI  
z
Low package inductance (< 10 nH)  
- easy to drive and to protect  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
z
AC motor speed control  
DC servo and robot drives  
z
z
BVCES  
VGE(th)  
IC = 500 µA, VGE = 0 V  
600  
4
V
V
DC choppers  
z
Uninterruptible power supplies (UPS)  
Switch-mode and resonant-mode  
power supplies  
IC = 8 mA, VCE = VGE  
8
z
I C E S  
VCE = V  
T = 25°C  
200 µA  
mA  
VGE = 0CVES  
TJJ = 125°C  
2
Advantages  
z
IGES  
VCE = 0 V, VGE = 20 V  
200 nA  
2.5  
Space savings  
Easy to mount with 2 screws  
High power density  
z
VCE(sat)  
IC = IC90, VGE = 15 V; Note 1  
V
z
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2004 IXYS All rights reserved  
DS98890A(05/04)  
IXSN 80N60BD1  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
miniBLOC, SOT-227 B  
IC = 60 A; VCE = 10 V,  
Note1  
52  
S
C i e s  
Coes  
Cres  
6600  
720  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
196  
Qg  
200  
70  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
60  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
60  
50  
ns  
ns  
M4 screws (4x) supplied  
IC = IC90, VGE = 15 V, L = 100 µH,  
VCE = 0.8 VCES, RG = 2.7 Ω  
Dim.  
Millimeter  
Inches  
Min.  
140  
120  
1.8  
280 ns  
200 ns  
3.5 mJ  
Min.  
Max.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
Note 2  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
Eoff  
E
F
G
H
J
K
L
M
N
O
4.09  
4.29  
0.161  
0.587  
1.186  
1.496  
0.460  
0.351  
0.030  
0.496  
0.990  
0.078  
0.195  
1.045  
0.169  
0.595  
1.193  
1.505  
0.481  
0.378  
0.033  
0.506  
1.001  
0.084  
0.235  
1.059  
td(on)  
tri  
60  
60  
ns  
ns  
14.91  
15.11  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 100 µH  
VCE = 0.8 VCES, RG = 2.7 Ω  
30.12  
38.00  
11.68  
8.92  
0.76  
12.60  
25.15  
1.98  
4.95  
26.54  
30.30  
38.23  
12.22  
9.60  
0.84  
12.85  
25.42  
2.13  
5.97  
26.90  
Eon  
td(off)  
tfi  
4.8  
190  
160  
3.3  
mJ  
ns  
Note 2  
ns  
Eoff  
mJ  
P
Q
R
S
T
U
3.94  
4.72  
24.59  
-0.05  
4.42  
4.85  
25.07  
0.1  
0.155  
0.186  
0.968  
-0.002  
0.174  
0.191  
0.987  
0.004  
RthJC  
RthCK  
0.30 K/W  
K/W  
0.05  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol Test Conditions  
typ. max.  
VF  
IF = 60 A, Note 1  
TJ = 150°C  
2.05  
1.4  
V
V
IRM  
IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs  
VR = 100 V, TJ = 100°C  
8.0  
A
trr  
IF = 1 A, -di/dt = 50 A/µs, VR = 30 V  
35  
ns  
RthJC  
0.85 K/W  
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2%  
Note: 2. Remarks: Switching times may increase for  
VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXSN 80N60BD1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
300  
270  
240  
210  
180  
150  
120  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 17V  
15V  
VGE = 17V  
15V  
13V  
11V  
13V  
11V  
9V  
7V  
9V  
60  
30  
7V  
6
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7  
3
0
1
2
3
4
5
7
8
9
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 17V  
15V  
VGE = 15V  
IC = 160A  
13V  
11V  
9V  
7V  
IC = 80A  
IC = 40A  
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7  
3
-50  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emiiter voltage  
Fig. 6. Input Admittance  
320  
10  
9
TJ = 25ºC  
280  
240  
200  
160  
120  
80  
8
IC = 160A  
80A  
7
40A  
6
5
TJ = 125ºC  
25ºC  
4
-40ºC  
40  
3
0
2
5
6
7
8
9
10  
11  
12  
13  
6
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
VG E - Volts  
© 2004 IXYS All rights reserved  
IXSN 80N60BD1  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
14  
12  
10  
8
TJ = 125ºC  
VGE = 15V  
VCE = 480V  
TJ = -40ºC  
25ºC  
125ºC  
IC = 160A  
6
IC = 80A  
IC = 40A  
4
2
0
0
40  
80  
120 160 200 240 280 320  
2
4
6
8
10  
12  
14  
16  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
11  
10  
9
11  
10  
9
RG = 2.7Ω  
RG = 2.7Ω  
RG = 10Ω - - - -  
VGE = 15V  
RG = 10Ω - - - -  
VGE = 15V  
CE = 480V  
IC = 160A  
V
8
8
VCE = 480V  
TJ = 125ºC  
TJ = 25ºC  
7
7
6
6
5
5
4
4
IC = 80A  
IC = 40A  
3
3
2
2
1
1
0
0
25 35 45 55 65 75 85 95 105 115 125  
40  
60  
80  
100  
120  
140  
160  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
325  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
275  
250  
225  
200  
175  
150  
125  
100  
75  
td(off)  
tfi  
- - - - - -  
RG = 2.7Ω  
VGE = 15V  
VCE = 480V  
IC = 160A  
IC = 80A  
TJ = 125ºC  
IC = 40A  
td(off)  
tfi  
- - - - - -  
TJ = 125ºC  
VGE = 15V  
VCE = 480V  
TJ = 25ºC  
0
2
4
6
8
10  
12  
14  
16  
18  
40  
60  
80  
100  
120  
140  
160  
R G - Ohms  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXSN 80N60BD1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
15  
12  
9
td(off)  
VCE = 300V  
IC = 80A  
tfi  
IC = 160A  
- - - - - -  
IG = 10mA  
RG = 2.7Ω  
VGE = 15V  
VCE = 480V  
IC = 40A  
6
IC = 80A  
3
IC = 160A  
0
25 35 45 55 65 75 85 95 105 115 125  
0
20 40 60 80 100 120 140 160 180 200  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 15. Capacitance  
10000  
1000  
100  
f = 1 MHz  
C
ies  
C
oes  
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
Fig. 16. Maximum Transient Thermal Resistance  
1.0  
0.1  
0.0  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
IXSN 80N60BD1  
160  
A
140  
4000  
nC  
80  
T = 100°C  
VVRJ= 300V  
T = 100°C  
VVRJ= 300V  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF  
TVJ= 25°C  
TVJ=100°C  
I =120A  
IF= 60A  
IFF= 30A  
IRM  
Qr  
I =120A  
IFF= 30A  
IF= 60A  
40  
20  
0
TVJ=150°C  
A/µs  
0
1
2
V
100  
1000  
0
200 400 600 1000  
-diF/dt  
A/µs  
-diF/dt  
VF  
Fig. 17. Forward current IF versus VF  
2.0  
Fig. 18. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 19. Peak reverse current IRM  
versus -diF/dt  
140  
20  
V
1.6  
µs  
T = 100°C  
VVRJ= 300V  
ns  
130  
VFR  
tfr  
trr  
1.5  
Kf  
15  
10  
5
1.2  
VFR  
tfr  
120  
110  
100  
90  
I =120A  
IF= 60A  
IFF= 30A  
1.0  
0.8  
0.4  
0.0  
IRM  
0.5  
Qr  
T = 100°C  
IFVJ = 60A  
0.0  
80  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 20. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 21. Recovery time trr versus -diF/dt  
Fig. 22. Peak forward voltage VFR and  
tfr versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
4
0.3073  
0.3533  
0.0887  
0.1008  
0.0055  
0.0092  
0.0007  
0.0399  
0.01  
0.001  
DSEP 2x61-06A  
0.0001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 7  
Transient thermal resistance junction to case  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
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