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ZXTP2039FTA

型号：

ZXTP2039FTA

描述：

SOT23 80伏PNP硅平面中功率晶体管[ SOT23 80 volt PNP silicon planar medium power transistor ]

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

5 页

PDF大小：

150 K

下载PDF手册
ZXTP2039F  
SOT23 80 volt PNP silicon planar medium power  
transistor  
Summary  
V
V
> -80V  
> -60V  
(BR)CEV  
(BR)CEO  
I
= -1A  
c(cont)  
V
< -600mV @ -1A  
ce(sat)  
Complementary type  
ZXTN2038F  
Description  
This transistor combines high gain, high current operation and low saturation voltage making it  
ideal for power MOSFET gate driving and low loss power switching.  
Features  
■ Low saturation voltage for reduced power dissipation  
■ 1 to 2 amp high current capability  
■ Pb-free  
■ SOT23 package  
Applications  
■ Power MOSFET gate driving  
■ Low loss power switching  
Ordering information  
Pin out - top view  
Device  
Reel size  
7”  
Tape width  
8mm  
Quantity per reel  
3,000  
ZXTP2039FTA  
ZXTP2039FTC  
13”  
8mm  
10,000  
Device marking  
P39  
Issue 3 - August 2005  
© Zetex Semiconductors plc 2005  
1
www.zetex.com  
ZXTP2039F  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
V
V
V
-80  
V
CBO  
CEV  
CEO  
EBO  
Collector-emitter voltage  
Collector-emitter voltage  
Emitter-base voltage  
Peak pulse current  
-80  
-60  
-5.0  
-2  
V
V
V
I
I
I
A
CM  
*
-1  
A
C
Continuous collector current  
Peak base current  
-1  
A
BM  
*
P
350  
mW  
Power dissipation @ T =25°C  
D
A
Operating and storage temperature  
T :T  
-55 to +150  
°C  
j
stg  
NOTES:  
*
For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air  
conditions.  
Issue 3 - August 2005  
© Zetex Semiconductors plc 2005  
2
www.zetex.com  
ZXTP2039F  
Electrical characteristics (@T  
= 25°C)  
AMB  
Parameter  
Symbol  
Min.  
Max.  
Unit  
Conditions  
I =-100␮A  
Collector-base breakdown  
voltage  
V
-80  
V
(BR)CBO  
C
Collector-emitter breakdown  
voltage  
V
-80  
V
I =-1␮A  
C
(BR)CEV  
-0.3V < V < 1V  
BE  
*
Collector-emitter breakdown  
voltage  
V
V
-60  
-5  
V
V
(BR)CEO  
(BR)EBO  
I =-10mA  
C
Emitter-base breakdown  
voltage  
I =-100µA  
E
Collector-emitter cut-off current  
Collector-base cut-off current  
Emitter-base cut-off current  
I
-100  
-100  
-100  
nA  
nA  
nA  
V
V
V
=-60V  
=-60V  
=-4V  
CES  
CBO  
EBO  
CE  
CB  
EB  
I
I
Static forward current transfer  
ratio  
h
100  
100  
80  
I =-1mA, V =-5V  
C CE  
FE  
*
I =-500mA, V =-5V  
300  
C
CE  
*
I =-1A, V =-5V  
C
CE  
*
I =-2A, V =-5V  
15  
C
CE  
*
Collector-emitter saturation  
voltage  
V
-0.2  
-0.3  
-0.6  
V
V
V
CE(sat)  
BE(sat)  
I =-100mA, I =-2mA  
C
B
*
I =-500mA, I =-50mA  
C
B
*
I =-1A, I =-100mA  
C
B
*
Base-emitter saturation voltage  
Base-emitter turn-on voltage  
Transition frequency  
V
-1.2  
-1.0  
V
V
I =-1A, I =-100mA  
C
B
*
V
BE(on)  
I =-1A, V =-5V  
C
CE  
f
150  
I =-50mA, V =-10V  
T
C
CE  
f=100MHz  
Output capacitance  
C
10  
pF  
V
=-10V, f=1MHz  
CB  
obo  
NOTES:  
*
Measured under pulsed conditions. Pulse width=300␮S. Duty cycle Յ2%  
Spice parameter data is available upon request for this device  
Issue 3 - August 2005  
© Zetex Semiconductors plc 2005  
3
www.zetex.com  
ZXTP2039F  
Typical characteristics  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.6  
+25 ° C  
IC/IB=10  
0.5  
0.4  
0.3  
-55 °C  
I
C
/I  
/I  
B
=10  
=50  
+25 °C  
+100 °C  
IC  
B
0.2  
0.1  
0
10mA  
100mA  
1A  
10A  
10A  
10A  
10mA  
100mA  
1A  
10A  
1mA  
1mA  
IC-Collector Current  
IC-Collector Current  
V
CE(sat) v I  
C
V
CE(sat) v I  
C
400  
300  
200  
100  
0
V
CE=5V  
IC/IB=10  
1.0  
0.8  
0.6  
0.4  
0.2  
0
+100 °C  
+25 °C  
-55 °C  
-55 °C  
+25 °C  
+100 °C  
1mA  
10mA  
100mA  
1A  
10A  
1mA  
10mA  
100mA  
1A  
IC-Collector Current  
FE V I  
IC-Collector Current  
h
C
V
BE(sat) v I  
C
10  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
VCE=5V  
1
0.1  
DC  
1s  
-55 °C  
+25 °C  
+100 °C  
100ms  
10ms  
1ms  
100us  
0.01  
1mA  
10mA  
100mA  
1A  
0.1V  
1V  
10V  
100V  
IC-Collector Current  
BE(on) v I  
VCE - Collector Emitter Voltage (V)  
V
C
Safe Operating Area  
Issue 3 - August 2005  
© Zetex Semiconductors plc 2005  
4
www.zetex.com  
ZXTP2039F  
Packaging details - SOT23  
L
H
G
N
D
3 leads  
A
M
B
C
K
F
Package dimensions  
Dimensions in inches are control dimensions, dimensions in millimeters are approximate.  
Dim.  
Millimeters  
Inches  
Min.  
Dim.  
Millimeters  
Inches  
Max.  
Min.  
2.67  
1.20  
-
Max.  
Max.  
0.120  
0.055  
0.043  
0.021  
Min.  
0.33  
0.01  
2.10  
0.45  
Max.  
Max.  
0.020  
0.004  
0.0985  
0.025  
A
B
C
D
F
3.05  
1.40  
1.10  
0.53  
0.15  
0.105  
0.047  
-
H
K
L
0.51  
0.10  
2.50  
0.64  
0.013  
0.0004  
0.083  
0.018  
0.37  
0.085  
0.015  
M
N
-
0.0034 0.0059  
0.075 Nom.  
0.95 Nom.  
0.0375 Nom.  
G
1.90 Nom.  
-
-
-
-
Europe  
Zetex GmbH  
Streitfeldstraße 19  
D-81673 München  
Germany  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.  
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
Issue 3 - August 2005  
© Zetex Semiconductors plc 2005  
5
www.zetex.com  
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