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IXFX21N100Q

型号：

IXFX21N100Q

描述：

HiPerFET功率MOSFET Q系列[ HiPerFET Power MOSFETs Q-CLASS ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

602 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
Q-CLASS  
IXFK 21N100Q  
IXFX 21N100Q  
VDSS = 1000 V  
ID25 21 A  
RDS(on)= 0.50 Ω  
=
trr ≤ 250 ns  
Single MOSFET Die  
N-ChannelEnhancementMode  
AvalancheRated, LowQg,  
High dV/dt, Low trr  
PLUS247TM (IXFX)  
(TAB)  
G
Symbol  
TestConditions  
Maximum Ratings  
D
VDSS  
VDGR  
T
= 25°C to 150°C  
1000  
1000  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
TO-264AA(IXFK)  
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
(TAB)  
ID25  
IDM  
IAR  
T
= 25°C  
21  
84  
21  
A
A
A
TC = 25°C, pulse width limited by TJM  
S
TCC = 25°C  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
EAR  
EAS  
T
= 25°C  
60  
2.5  
mJ  
J
TCC = 25°C  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
10  
V/ns  
Features  
• IXYS advanced low Q process  
• Low gate charge andgcapacitances  
- easier to drive  
PD  
TJ  
TC = 25°C  
500  
W
-55 ... +150  
°C  
- faster switching  
• International standard packages  
• Low R  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
• RatedDfSo(ronu) nclamped Inductive load  
switching (UIS) rated  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
• Molding epoxies meet UL 94 V-0  
flammability classification  
Md  
Mounting torque  
TO-264  
0.4/6  
Nm/lb.in.  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Applications  
• DC-DC converters  
• Battery chargers  
• Switched-mode and resonant-mode power  
supplies  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
• DC choppers  
min. typ.  
max.  
• AC motor control  
• Temperature and lighting controls  
VDSS  
VGS = 0 V, ID = 1mA  
1000  
V
VGS(th)  
IGSS  
VDS = VGS, ID = 4mA  
VGS = 20 V, VDS = 0  
3
5.5  
100  
V
nA  
Advantages  
• PLUS 247TM package for clip or spring  
mounting  
• Space savings  
• High power density  
IDSS  
VDS = VDSS  
VGS = 0 V  
100  
2
µA  
mA  
TJ = 125°C  
RDS(on)  
V
= 10 V, ID = 0.5 • ID25  
0.50  
Ω
NGoSte 1  
DS98677D(10/03)  
© 2002 IXYS All rights reserved  
IXFK 21N100Q  
IXFX 21N100Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS247TM Outline  
VDS = 20 V; ID = 0.5 • ID25  
Note 1  
16  
22  
S
Ciss  
Coss  
Crss  
6900  
550  
90  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
21  
18  
60  
12  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 Ω (External),  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3-Source(Emitter)  
4 - Drain (Collector)  
Qg(on)  
Qgs  
170  
38  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Qgd  
75  
A
A12  
RthJC  
RthCK  
0.26 K/W  
K/W  
b
b12  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
b
0.15  
C
D
E
0.61  
0.80  
.024 .031  
.819 .840  
.620 .635  
20.80 21.34  
15.75 16.13  
e
5.45 BSC  
.215 BSC  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
L
19.81 20.32  
.780 .800  
.150 .170  
L1  
Q
R
3.81  
4.32  
Symbol  
TestConditions  
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IS  
VGS = 0 V  
21  
84  
A
A
TO-264 AA Outline  
ISM  
Repetitive;  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V, Note 1  
1.5  
V
trr  
250 ns  
IF = IS,-di/dt = 100 A/µs, VR = 100 V  
QRM  
IRM  
1.4  
8
µC  
A
Millimeter  
Dim.  
Inches  
Min.  
Max.  
Min.  
Max.  
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
A1  
.114  
A2  
.083  
b
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
b1  
b2  
c
D
E
e
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
5.46BSC  
.215BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXFK 21N100Q  
IXFX 21N100Q  
Fig.1. OutputCharacteristicsat25oC  
Fig.2. OutputCharacteristicsat125oC  
30  
50  
TJ = 125OC  
TJ = 25OC  
VGS = 10V  
V
GS = 10V  
25  
20  
15  
10  
5
40  
9V  
8V  
7V  
9V  
8V  
7V  
30  
6V  
20  
6V  
5V  
10  
5V  
0
0
0
5
10  
15  
VDS - Volts  
20  
25  
30  
0
5
10  
15  
20  
25  
VDS - Volts  
Fig. 3. RDS(ON) vs. DrainCurrent  
Fig. 4. RDS(ON) vs. TJ  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VGS = 10V  
V
GS = 10V  
TJ = 125OC  
ID = 21A  
ID = 10.5A  
TJ = 25OC  
0
5
10  
15  
20  
25  
30  
-25  
0
25  
50  
75 100 125 150  
ID - Amperes  
TJ - Degrees C  
Fig.5. DrainCurrentvs.CaseTemperature  
Fig.6. AdmittanceCurves  
24  
25  
20  
15  
10  
5
20  
16  
12  
8
TJ = 125oC  
TJ = 25oC  
TJ = -40oC  
4
0
0
-50 -25  
0
25 50 75 100 125 150  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
TC - Degrees C  
VGS - Volts  
© 2002 IXYS All rights reserved  
IXFK 21N100Q  
IXFX 21N100Q  
Fig.7. GateChargeCharacteristicCurve  
Fig.8. CapacitanceCurves  
10.0  
7.5  
5.0  
2.5  
0.0  
10000  
5000  
2500  
V
= 500 V  
= 10.5 A  
= 10 mA  
DS  
D
G
Ciss  
I
I
f = 1MHz  
Coss  
1000  
500  
250  
Crss  
100  
50  
0
25  
50  
75  
100 125 150 175  
0
5
10 15 20 25 30 35 40  
Gate Charge - nC  
VDS - Volts  
Fig.9. SourceCurrentvs.SourcetoDrainVoltage  
25  
20  
15  
o
= 125 C  
T
J
10  
5
o
= 25 C  
T
J
0
0.2  
0.4  
0.6  
0.8  
1.0  
VSD - Volts  
Fig.10. ThermalImpedance  
0.300  
0.100  
Single Pulse  
0.010  
0.001  
10-4  
10-3  
10-2  
10-1  
100  
101  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
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