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IXFX24N100

型号:

IXFX24N100

描述:

HiPerFETTM功率MOSFET[ HiPerFETTM Power MOSFETs ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

137 K

HiPerFETTM  
IXFK 24N100  
IXFX 24N100  
VDSS = 1000 V  
ID25  
=
24 A  
Power MOSFETs  
RDS(on) = 0.39 Ω  
Single MOSFET Die  
trr 250 ns  
PLUS247TM  
(IXFX)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
1000  
1000  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
D (TAB)  
G
VGS  
Continuous  
Transient  
20  
30  
V
V
D
VGSM  
ID25  
IDM  
IAR  
T
= 25°C  
24  
96  
24  
A
A
A
TC = 25°C, Note 1  
TO-264AA(IXFK)  
TCC = 25°C  
EAR  
EAS  
T
= 25°C  
60  
3
mJ  
J
TCC = 25°C  
G
D
(TAB)  
S
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
5
V/ns  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
PD  
TC = 25°C  
560  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
°C  
T
Features  
TJM  
-55 ... +150  
300  
l
International standard packages  
TLstg  
1.6 mm (0.063 in.) from case for 10 s  
l
l
l
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque  
TO-264  
0.9/6  
Nm/lb.in.  
Weight  
PLUS 247  
TO-264  
6
g
g
10  
l
l
Low package inductance  
- easy to drive and to protect  
Fast intrinsic rectifier  
Applications  
l
DC-DC converters  
l
Battery chargers  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
l
Switched-mode and resonant-mode  
(TJ = 25°C, unless otherwise specified)  
power supplies  
min. typ. max.  
l
DC choppers  
VGS = 0 V, ID = 3mA  
1000  
V
l
AC motor control  
l
Temperature and lighting controls  
VGS(th)  
IGSS  
VDS = VGS, ID = 8mA  
VGS = 20 V, VDS = 0  
3.0  
5.0 V  
100 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
VGS = 10 V, ID = 0.5 • ID25  
Note 2  
T = 25°C  
TJJ = 125°C  
100 µA  
l
PLUS 247TM package for clip or spring  
2 mA  
mounting  
Space savings  
l
RDS(on)  
0.39 Ω  
l
High power density  
98598B (8/02)  
© 2002 IXYS All rights reserved  
IXFK 24N100  
IXFX 24N100  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS247TM Outline  
VDS = 10 V; ID = 0.5 • ID25  
Note 2  
15  
22  
S
Ciss  
Coss  
Crss  
7000  
750  
260  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
35  
35  
75  
21  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 (External),  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3-Source(Emitter)  
4 - Drain (Collector)  
Qg(on)  
Qgs  
Qgd  
250  
55  
135  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
A
A12  
RthJC  
RthCK  
0.22 K/W  
K/W  
b
b12  
C
D
E
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
.024 .031  
.819 .840  
.620 .635  
b
0.15  
0.61  
0.80  
20.80 21.34  
15.75 16.13  
e
5.45 BSC  
.215 BSC  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
L
19.81 20.32  
.780 .800  
L1  
3.81  
4.32  
.150 .170  
.220 0.244  
.170 .190  
Symbol  
TestConditions  
Q
5.59  
6.20  
R
4.32  
4.83  
IS  
VGS = 0 V  
24  
96  
A
A
TO-264 AA Outline  
ISM  
Repetitive;  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V, Note 1  
1.5  
V
trr  
250 ns  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
QRM  
IRM  
1.0  
8
µC  
A
Millimeter  
Dim.  
Inches  
Min.  
Max.  
Min.  
Max.  
Note: 1. Pulse width limited by TJM  
A
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
0.53  
25.91  
19.81  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
0.83  
26.16  
19.96  
.190  
.100  
.079  
.044  
.094  
.114  
.021  
1.020  
.780  
.202  
A1  
A2  
.114  
.083  
2. Pulse test, t 300 µs, duty cycle d 2 %  
b
.056  
.106  
.122  
.033  
1.030  
.786  
b1  
b2  
c
D
E
e
5.46BSC  
.215BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
20.32  
20.83  
.800  
.820  
L1  
2.29  
2.59  
.090  
.102  
P
3.17  
3.66  
.125  
.144  
Q
6.07  
6.27  
.239  
.247  
Q1  
8.38  
8.69  
.330  
.342  
R
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
R1  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXFK 24N100  
IXFX 24N100  
50  
40  
30  
20  
10  
0
20  
15  
10  
5
T = 25°C  
J
V
= 10V  
GS  
T
= 25°C  
V
= 8-10V  
7V  
7V  
J
GS  
9V  
8V  
6V  
6V  
5V  
5V  
0
0
5
10  
15  
20  
25  
0
2
4
VDS - Volts  
Fig.1 Output Characteristics @ Tj = 25°C  
6
8
10  
VCE - Volts  
Fig.2 Extended Output Characteristics @ Tj = 25°C  
20  
20  
16  
12  
8
V
= 10V  
7V  
GS  
T
= 125°C  
J
9V  
6V  
8V  
15  
TJ = 125OC  
10  
TJ = 25OC  
5
4
5V  
0
0
0
4
8
12  
VDS - Volts  
16  
20  
3
4
5
6
7
8
VGS - Volts  
Fig.4 Drain Current vs Gate Source Voltage  
Fig.3 Output Characteristics @ Tj = 25°C  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
= 10V  
GS  
I
= 24A  
D
I
= 12A  
D
25  
50  
75  
TJ - Degrees C  
Fig.5TemperatureDependenceofDrain-to-  
100  
125  
150  
IXFK 24N100  
IXFX 24N100  
20000  
10000  
15  
12  
9
Ciss  
V
= 500 V  
= 12 A  
= 10 mA  
DS  
D
G
I
I
f = 1MHz  
Coss  
Crss  
1000  
100  
6
3
0
0
5
10 15 20 25 30 35 40  
0
50 100 150 200 250 300 350  
VDS - Volts  
Fig.7CapacitanceCurves  
Gate Charge - nC  
Fig. 6 Gate Charge Characteristic  
50  
40  
30  
20  
10  
0
30  
25  
20  
15  
10  
5
o
T
= 125 C  
J
o
= 25 C  
T
J
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
-50 -25  
0
25  
50  
75 100 125 150  
Case Temperature - oC  
Fig. 9DrainCurrentvsCaseTemperature  
VSD - Volts  
Fig. 8 Drain Current vs Drain to Source Voltage  
0.300  
0.100  
0.010  
0.001  
10-4  
10-3  
10-2  
10-1  
100  
101  
Pulse Width - Seconds  
Fig.10TransientThermalResistance  
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