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IXFX30N100Q2

型号：

IXFX30N100Q2

描述：

HiPerFET功率MOSFET Q系列[ HiPerFET Power MOSFETs Q-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

577 K

下载PDF手册
HiPerFETTM  
IXFK 30N100Q2  
IXFX 30N100Q2  
VDSS = 1000 V  
ID25 30 A  
RDS(on) = 0.40 Ω  
=
PowerMOSFETs  
Q-Class  
N-Channel Enhancement Mode  
trr ≤ 300 ns  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg, low trr  
PreliminaryDataSheet  
Symbol  
TestConditions  
Maximum Ratings  
PLUS247TM (IXFX)  
VDSS  
VDGR  
T
= 25°C to 150°C  
1000  
1000  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
D (TAB)  
ID25  
IDM  
IAR  
T
= 25°C  
30  
120  
30  
A
A
A
TC = 25°C, pulse width limited by TJM  
G
D
TCC = 25°C  
EAR  
EAS  
T
= 25°C  
60  
4.0  
mJ  
J
TCC = 25°C  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
20  
V/ns  
TO-264 AA (IXF
PD  
TC = 25°C  
735  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D
S
D (TAB)  
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Md  
Mountingtorque  
TO-264  
0.9/6 Nm/lb.in.  
Weight  
PLUS-247  
TO-264  
6
10  
g
g
Features  
z
Double metal process for low gate  
resistance  
International standard packages  
Epoxy meet UL 94 V-0, flammability  
classification  
Avalanche energy and current rated  
Fast intrinsic Rectifier  
Symbol  
TestConditions  
Characteristic Values  
z
z
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDSS  
VGS = 0 V, ID = 3mA  
VDS = VGS, ID = 8 mA  
1000  
2.5  
V
V
z
z
VGS(th)  
5.0  
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
200 nA  
Advantages  
VDS = V  
T = 25°C  
TJJ = 125°C  
50 µA  
VGS = 0 DVSS  
2
mA  
z
Easy to mount  
Space savings  
z
RDS(on)  
V
= 10 V, ID = 0.5 • I  
0.40  
Ω
PuGSlse test, t ≤ 300 µs,Dd2u5 ty cycle d ≤ 2 %  
z
High power density  
DS99160(4/04)  
© 2004 IXYS All rights reserved  
IXFK 30N100Q2  
IXFX 30N100Q2  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS247TM Outline  
VDS = 15 V; ID = 0.5 • ID25, pulse test  
20  
30  
S
Ciss  
Coss  
Crss  
8200  
760  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
140  
td(on)  
tr  
td(off)  
tf  
22  
14  
60  
10  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Terminals: 1-Gate  
RG = 1.0 Ω (External),  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Qg(on)  
Qgs  
186  
46  
nC  
nC  
nC  
Min. Max.  
Min. Max.  
A
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
.045 .055  
.075 .084  
.115 .123  
.024 .031  
.819 .840  
.620 .635  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A12  
Qgd  
82  
b
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
b
RthJC  
RthCK  
0.17 K/W  
K/W  
b12  
TO-264  
0.15  
C
D
E
0.61  
0.80  
20.80 21.34  
15.75 16.13  
e
5.45 BSC  
.215 BSC  
.780 .800  
.150 .170  
L
19.81 20.32  
L1  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
min.  
typ. max.  
TO-264 AA Outline  
VGS = 0 V  
30  
A
A
ISM  
Repetitive; pulse width limited by TJM  
120  
1.5  
VSD  
IF = IS, VGS = 0 V,  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
250  
ns  
µC  
A
QRM  
IRM  
1
IF = 25A, -di/dt = 100 A/µs, VR = 100 V  
10  
Millimeter  
Dim.  
Inches  
Min. Max.  
Min.  
Max.  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.202  
.114  
.083  
A1  
.100  
A2  
.079  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
D
E
e
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
5.46BSC  
.215BSC  
J
0.00  
0.25  
.000  
.010  
K
0.00  
0.25  
.000  
.010  
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
6.04  
6.30  
.238  
.248  
T
1.57  
1.83  
.062  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
ofthefollowingU.S.patents:  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXFK 30N100Q2  
IXFX 30N100Q2  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
º
º
@ 25 C  
@ 25 C  
30  
27  
24  
21  
18  
15  
12  
9
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
7V  
6.5V  
V
GS  
= 10V  
7V  
GS  
6.5V  
6V  
6V  
5.5V  
5.5V  
5V  
6
5V  
9
3
0
0
0
3
6
9
12 15 18 21 24 27 30  
0
0
0
1
2
3
4
5
6
7
8
10 11 12  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
C
30  
27  
24  
21  
18  
15  
12  
9
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
7V  
6V  
GS  
V
GS  
= 10V  
5.5V  
5V  
I
= 30A  
D
I
= 15A  
D
6
0.7  
0.4  
3
4.5V  
18  
0
3
6
9
12  
15  
21  
24  
27  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
33  
30  
27  
24  
21  
18  
15  
12  
9
2.8  
2.6  
2.4  
2.2  
2
V
GS  
= 10V  
T = 125ºC  
J
1.8  
1.6  
1.4  
1.2  
1
T = 25ºC  
J
6
3
0.8  
0
5
10 15 20 25 30 35 40 45 50 55 60  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXFK 30N100Q2  
IXFX 30N100Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
T = -40ºC  
J
25ºC  
125ºC  
T = 125ºC  
J
25ºC  
-40ºC  
0
0
3.5  
0.4  
0
4
4.5  
5
5.5  
6
6.5  
1.2  
40  
0
5
10 15 20 25 30 35 40 45 50  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 500V  
DS  
I
I
= 15A  
D
G
= 10mA  
T = 125ºC  
J
T = 25ºC  
J
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
20 40 60 80 100 120 140 160 180 200  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
1.00  
0.10  
0.01  
10000  
1000  
100  
C
C
C
f = 1MHz  
iss  
oss  
rss  
5
10  
15  
20  
25  
30  
35  
1
10  
100  
1000  
VD S - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
ofthefollowingU.S.patents:  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
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