IXFK 48N60P IXFX 48N60P
TO-264 (IXFK) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
35
53
S
Ciss
Coss
Crss
8860
850
60
pF
pF
pF
td(on)
tr
td(off)
tf
30
25
85
22
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 ID25
RG = 2 Ω (External)
Qg(on)
Qgs
150
50
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
50
RthJC
RthCs
0.15 ° C/W
° C/W
TO-264 and PLUS247
0.15
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
Symbol
IS
Test Conditions
PLUS 247TM (IXFX) Outline
VGS = 0 V
Repetitive
48
110
1.5
A
ISM
A
V
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25A, -di/dt = 100 A/µs
200
ns
QRM
IRM
VR = 100V
0.8
6.0
µC
A
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
