HiPerFETTM Power MOSFETs
ISOPLUS247TM Q Class
IXFR 15N80Q VDSS = 800 V
ID25 = 13 A
RDS(on) = 0.60 W
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
trr £ 250 ns
Low Gate Charge and Capacitances
Preliminary data
ISOPLUS 247TM
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
800
800
V
V
G
VGS
VGSM
Continuous
Transient
±20
±30
V
V
D
Isolated back surface*
D = Drain
ID25
IDM
IAR
TC = 25°C
TC = 25°C, Note 1
TC = 25°C
13
60
15
A
A
A
G = Gate
S = Source
EAR
EAS
TC = 25°C
TC = 25°C
30
1.0
mJ
J
*Patentpending
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
Features
PD
TC = 25°C
250
W
• SiliconchiponDirect-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electricalisolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.062 in.) from case for 10 s
300
2500
5
°C
V~
g
VISOL
Weight
50/60 Hz, RMS
t = 1 min
• Fast intrinsic Rectifier
Applications
Symbol
VDSS
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
VGS = 0 V, ID = 3 mA
800
V
• DC choppers
• AC motor control
VGS(th)
IGSS
VDS = VGS, ID = 4mA
2.0
4.5
V
VGS = ±20 V, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25
1
mA
mA
Advantages
• Easy assembly
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 7.5A
Note 2
0.60
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98590A(7/00)
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