IXDH 30N120
IXDH 30N120 D1
IXDT 30N120
VCES
IC25
VCE(sat) typ = 2.4 V
= 1200 V
= 60 A
High Voltage IGBT
with optional Diode
IXDT 30N120 D1
Short Circuit SOA Capability
Square RBSOA
C
C
TO-247 AD (IXDH)
G
G
E
E
G
C
E
C (TAB)
IXDH 30N120 IXDH 30N120 D1
IXDT 30N120 IXDT 30N120 D1
TO--268 AA (IXDT)
Symbol
Conditions
Maximum Ratings
G
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
E
C (TAB)
TJ = 25°C to 150°C; RGE = 20 kW
G = Gate,
C = Collector ,
E = Emitter
TAB = Collector
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC90
ICM
TC = 25°C
60
38
76
A
A
A
TC = 90°C
Features
TC = 90°C, tp = 1 ms
●
NPT IGBT technology
●
●
●
●
●
low saturation voltage
low switching losses
RBSOA
VGE = ±15 V, TJ = 125°C, RG = 47 W
Clamped inductive load, L = 30 µH
ICM = 50
VCEK < VCES
A
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard packages
tSC
(SCSOA)
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 47 W, non repetitive
10
µs
PC
TC = 25°C
IGBT
300
135
W
W
●
●
●
Diode
TJ
-55 ... +150
-55 ... +150
300
°C
°C
°C
Tstg
Advantages
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
●
Space savings
High power density
IXDT:
●
●
Md
Mounting torque
1.1/10 Nm/lb.in.
surfacemountablehighpowerpackage
Weight
6
g
Typical Applications
●
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
●
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
●
●
●
Switch-mode and resonant-mode
V(BR)CES
VGE(th)
ICES
VGE = 0 V
1200
4.5
V
V
power supplies
IC = 1 mA, VCE = VGE
VCE = VCES
6.5
TJ = 25°C
TJ = 125°C
1.5 mA
mA
2.5
2.4
IGES
VCE = 0 V, VGE = ± 20 V
IC = 30 A, VGE = 15 V
± 500 nA
VCE(sat)
2.9
V
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