IXDA 20N120 AS VCES
IC25
= 1200 V
= 34 A
High Voltage IGBT
VCE(sat) typ = 2.8 V
Short Circuit SOA Capability
Square RBSOA
C
E
TO-263 AB
Preliminary Data
G
G
E
C (TAB)
E = Emitter, G = Gate , C (TAB) = Collector
Symbol
Conditions
Maximum Ratings
Features
●
NPT IGBT technology
high switching speed
low tail current
no latch up
short circuit capability
positive temperature coefficient for
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
●
TJ = 25°C to 150°C; RGE = 20 kW
●
●
VGES
VGEM
Continuous
Transient
±20
±30
V
V
●
●
easy paralleling
MOS input, voltage controlled
International standard package
IC25
IC90
ICM
TC = 25°C
34
21
42
A
A
A
●
TC = 90°C
●
TC = 90°C, tp = 1 ms
RBSOA
VGE = ±15 V, TJ = 125°C, RG = 68 W
Clamped inductive load, L = 30 µH
ICM = 35
VCEK < VCES
A
µs
W
Advantages
●
Space savings
High power density
tSC
(SCSOA)
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 68 W, non repetitive
10
●
PC
TC = 25°C
IGBT
200
Typical Applications
TJ
-55 ... +150
-55 ... +150
°C
°C
●
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Tstg
●
●
Weight
2
g
●
●
Switch-mode and resonant-mode
power supplies
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V(BR)CES
VGE(th)
ICES
VGE = 0 V
1200
4.5
V
V
IC = 0.6 mA, VCE = VGE
6.5
VCE = VCES TJ = 25°C
0.8 mA
mA
TJ = 125°C
0.8
2.8
IGES
VCE = 0 V, VGE = ± 20 V
IC = 20 A, VGE = 15 V
± 500 nA
VCE(sat)
3.4
V
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