IXBH 6N170
IXBT 6N170
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; V = 10 V,
3
4
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %
P
Cies
Coes
Cres
330
23
6
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
Qg
Qge
Qgc
20
3.6
8
nC
nC
nC
e
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
td(on)
tri
td(off)
tfi
25
18
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
600 1000 ns
1110 1600 ns
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 120 Ω
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Eoff
4
6
mJ
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
td(on)
tri
Eon
td(off)
tfi
25
20
0.7
660
1600
ns
ns
mJ
ns
ns
.780 .800
.177
P
3.55
5.89
3.65
.140 .144
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 120 Ω
Q
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Eoff
5
mJ
TO-268 Outline
RthJC
RthCK
1.65 K/W
K/W
(TO-247)
0.25
ReverseDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V, Pulse test,
< 300 us, duty cycle d < 2%
3.0
V
t
IRM
trr
IF = 6 A, VGE = 0 V, -diF/dt = 50 A/us
vR = 100A
6
360
A
ns
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
