IXBN 75N170A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
miniBLOC, SOT-227 B
IC = IC90; V = 10 V,
30
50
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
7400
340
90
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
310
60
110
nC
nC
nC
M4 screws (4x) supplied
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
B
31.50
31.88
1.240
1.255
7.80
8.20
0.307
0.323
td(on)
tri
td(off)
tfi
35
60
240
60
ns
ns
ns
ns
mJ
Inductive load, TJ = 25°C
C
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
D
IC = IC90, VGE = 15 V
E
F
4.09
4.29
0.161
0.169
VCE = 0.8 VCES, RG = Roff = 1.0 Ω
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.496
1.193
1.505
Remarks: Switching times may
H
38.00
38.23
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
J
11.68
8.92
12.22
9.60
0.460
0.481
Eoff
6.0
K
0.351
0.378
L
0.76
0.84
0.030
0.496
0.033
0.506
M
12.60
12.85
td(on)
tri
Eon
td(off)
tfi
35
60
10
280
120
ns
ns
mJ
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 1.0 Ω
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
1.045
0.235
1.059
Q
26.54
26.90
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
Remarks: Switching times may
T
24.59
-0.05
25.07
0.1
0.968
0.987
0.004
increase for VCE (Clamp) > 0.8 • VCES
,
U
-0.002
higher TJ or increased RG
Eoff
12
mJ
RthJC
RthCK
0.2 K/W
K/W
0.05
ReverseDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
I
= IC90, VGE = 0 V, Pulse test,
5.0
V
tF < 300 us, duty cycle d < 2%
IRM
trr
IF = 25A, VGE = 0 V, -diF/dt = 50 A/us
vR = 100V
15
A
330
ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
4,850,072
