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WT3401

型号：

WT3401

描述：

表面贴装P沟道增强型MOSFET[ Surface Mount P-Channel Enhancement Mode MOSFET ]

品牌：

WEITRON[ WEITRON TECHNOLOGY ]

页数：

6 页

PDF大小：

159 K

下载PDF手册
WT-3401  
Surface Mount P-Channel  
DRAIN  
3
Enhancement Mode MOSFET  
DRAIN CURRENT  
- 3 AMPERES  
1
DRAIN SOURCE VOLTAGE  
- 30 VOLTAGE  
Features:  
GATE  
*Super high dense cell design for low RDS(ON)  
2
SOURCE  
R
R
<75 m @V =-10V  
GS  
Ω
DS(ON)  
DS(ON)  
<100 m @V =-4.5V  
Ω
GS  
3
*Rugged and Reliable  
*SOT-23 Package  
1
2
SOT-23  
Maximum Ratings (TA=25 C Unless Otherwise Specified)  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
Value  
-30  
Unite  
V
DS  
V
GS  
V
V
A
+
20  
-
(1)  
(1)  
Continuous Drain Current (T =125 C)  
J
I
D
-3  
(2)  
-10  
Pulsed Drain Current  
I
A
A
DM  
I
Drain-Source Diode Forward Current  
S
-1.25  
1.25  
100  
(1)  
Power Dissipation  
P
W
D
Maximax Junction-to-Ambient  
R
C/W  
θ
JA  
Operating Junction and Storage  
Temperature Range  
T ,Tstg  
J
-55 to 150  
C
Device Marking  
WT3401=T01  
WEITRON  
http://www.weitron.com.tw  
WT-3401  
Electrical Characteristics (T =25 C Unless otherwise noted)  
A
Min  
Typ  
Max  
Characteristic  
Symbol  
Unit  
(2)  
Static  
Drain-Source Breakdown Voltage  
V =0V, I =-250 uA  
V
(BR)DSS  
-
-1.5  
-
-
V
V
-30  
-1  
-
D
GS  
Gate-Source Threshold Voltage  
V =V , I =-250 uA  
V
GS (th)  
-2.5  
D
DS GS  
Gate-Source Leakage Current  
+
-
I
GSS  
100  
nA  
uA  
+
-
GS  
V =0V,V = 20V  
DS  
Zero Gate Voltage Drain Current  
V =-24V,V =0V  
I
-
-
DSS  
-1  
DS  
GS  
rDS (on)  
Drain-Source On-Resistance  
V =-10V, I =-3.0A  
mΩ  
-
-
-
-
75  
100  
GS  
D
V =-4.5V, I =-2.0A  
GS  
D
On-State Drain Current  
V =-5V,V =-10A  
I
D(on)  
-
-
-
-
6
5
A
S
DS  
GS  
Forward Transconductance  
V =-5V, I =-3A  
g
fs  
DS  
D
(3)  
Dynamic  
Input Capacitance  
V =-15V,V =0V, f=1MHZ  
C
-
-
-
iss  
-
-
653  
130  
97  
DS  
GS  
Output Capacitance  
V =-15V,V =0V, f=1MHZ  
C
oss  
F
P
DS  
GS  
Reverse Transfer Capacitance  
V =-15V,V =0V, f=1MHZ  
C
rss  
-
DS  
GS  
(3)  
Switching  
Turn-On Delay Time  
=-10V,V =-15V, I =-1A, R =15 ,R =6Ω  
t
-
-
-
-
-
-
nS  
nS  
d(on)  
13  
7
Ω
V
GEN  
GS  
L
DD  
D
Rise Time  
=-10V,V =-15V, I =-1A, R =15 ,R =6Ω  
t
r
Ω
V
GEN  
GS  
L
DD  
D
Turn-Off Delay Time  
=-10V,V =-15V, I =-1A, R =15 ,R =6Ω  
t
nS  
nS  
58  
26  
d(off)  
-
-
Ω
V
GEN  
GS  
L
DD  
D
Fall Time  
=-10V,V =-15V, I =-1A, R =15 ,R =6Ω  
t
f
Ω
V
GEN  
GS  
L
DD  
D
Total Gate Charge  
V =-15V, I =-3A,V =-10V  
-
-
-
-
nc  
nc  
nc  
Qg  
Qg  
13.5  
7
GS  
DS  
D
Total Gate Charge  
V =-15V, I =-3A,V =-4.5V  
GS  
DS  
D
Gate-Source Charge  
V =-15V, I =-3A,V =-10V  
Qgs  
-
-
2.3  
2.8  
-
-
GS  
DS  
D
Gate-Drain Charge  
V =-15V, I =-3A,V =-10V  
Qgd  
nc  
V
GS  
DS  
D
Diode Forward Voltage  
Drain-Source  
-
-0.8  
-1.2  
VSD  
V =0V, I =-1.25A  
GS  
S
<
Note:  
_
1. Surface Mounted on FR4 Board t 10sec.  
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.  
3. Guaranteed by Design, not Subject to Production Testing.  
WEITRON  
http://www.weitron.com.tw  
WT-3401  
WE ITR ON  
25  
20  
15  
10  
20  
16  
25 C  
-VGS=5V  
Tj =125 C  
-VGS=10,9,8,7,6V  
12  
-VGS=4V  
-VGS=3V  
8
4
0
5
0
-55 C  
2.5 3  
0.0 0.5  
1
1.5  
2
2
4
6
8
10  
12  
0
-V , GATE-TO-SOURCE VOLTAGE(V)  
GS  
-V , DRAIN-TO-SOURCE VOLTAGE(V)  
DS  
FIG.2 Transfer Characteristics  
FIG.1. Output Characteristics  
2.2  
VGS=-10V  
1000  
ID=-3A  
1.8  
800  
600  
400  
1.4  
1.0  
Ciss  
0.6  
0.2  
0
200  
0
Coss  
25 30  
Crss  
0
5
10  
15  
20  
-50 -25 0  
25 50 75  
100 125  
T ( C)  
j
-V , DRAIN-TO-SOURCE VOLTAGE(V)  
DS  
FIG.4 On-Resistance Variation with  
Temperature  
FIG.3 Capacitance  
1.3  
1.10  
VDS=VGS  
ID =-250uA  
ID =-250uA  
1.2  
1.07  
1.04  
1.1  
1.0  
0.9  
1.00  
0.97  
0.94  
0.91  
0.8  
0.7  
0.6  
-50 -25  
0
25 50 75 100 125  
-50 -25  
0
25 50 75 100 125  
T ,JUNCTION TEMPERATURE( C)  
j
T ,JUNCTION TEMPERATURE( C)  
j
FIG.5 Gate Threshold Variation  
with Temperature  
FIG.6 Breakdown Voltage Variation  
with Temperature  
WEITRON  
http://www.weitron.com.tw  
WT-3401  
WE ITR ON  
12  
10  
8
20  
10  
6
4
2
0
1
0
T
J
=25 C  
VDS=-5V  
20 25  
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
5
10  
15  
-I ,DRAIN-SOURCE CURRENT(A)  
DS  
-V ,BODY DIODE FORWARD VOLTAGE(V)  
SD  
FIG.7 Transconductance Variation  
with Drain Current  
FIG.8 Body Diode Forward Voltage  
Variation with Source Current  
50  
10  
VDS=-15V  
ID =-3A  
t
8
i
10  
1
m
i
0
L
m
)
s
N
O
1
0
(
R DS  
0
m
s
6
4
2
0
1
s
11  
D
C
VDS=-10V  
Single Pulse  
TC=25 C  
0.1  
0.03  
0.1  
1
10 20 50  
0
2
4
6
8
10 12 16 20  
-V ,DRAIN-SOURCE CURRENT(V)  
DS  
Q ,TOTAL GATE CHARGE(nC)  
g
FIG.10 Maximum Safe Operating Area  
FIG.9 Gate Charge  
V
DD  
on  
t
t
off  
d(off)  
t
r
t
d(on)  
t
f
t
R
L
90%  
90%  
V
IN  
D
OUT  
V
OUT  
V
V
10%  
10%  
INVE R TE D  
VG S  
R
G E N  
G
90%  
50%  
50%  
IN  
S
10%  
P ULS E WIDTH  
FIG.11 Switching Test Circuit  
FIG.12 Switching Waveforms  
WEITRON  
http://www.weitron.com.tw  
WT-3401  
WE ITR ON  
10  
1
0.5  
0.2  
DM  
P
0.1  
0.1  
1
t
2
t
0.05  
0.02  
1. R jA (t)=r (t) * R j  
θ A  
2. R j =See Datasheet  
θ
θ
A
3. Tj  
M-TA = PDM* R j (t)  
A
θ
Single Pulse  
0.01  
1
4. Duty Cycle, D=t /t  
2
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10 100  
1000  
SQUARE WAVE PULSE DURATION(SEC)  
FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE  
WEITRON  
http://www.weitron.com.tw  
WT-3401  
SOT-23 Package Outline Dimensions  
Unit:mm  
A
Dim  
A
B
C
D
Min Max  
0.35 0.51  
1.19 1.40  
2.10 3.00  
0.85 1.05  
0.46 1.00  
1.70 2.10  
2.70 3.10  
0.01 0.13  
0.89 1.10  
0.30 0.61  
0.076 0.25  
B
TOP VIE W  
C
E
G
H
J
K
L
D
G
H
E
K
M
L
J
M
WEITRON  
http://www.weitron.com.tw  
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