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WT3402

型号：

WT3402

描述：

表面贴装N沟道增强型MOSFET[ Surface Mount N-Channel Enhancement Mode MOSFET ]

品牌：

WEITRON[ WEITRON TECHNOLOGY ]

页数：

6 页

PDF大小：

160 K

下载PDF手册
WT-3402  
Surface Mount N-Channel  
Enhancement Mode MOSFET  
DRAIN  
3
DRAIN CURRENT  
4.6 AMPERES  
1
DRAIN SOURCE VOLTAGE  
30 VOLTAGE  
Features:  
GATE  
*Super high dense cell design for low RDS(ON)  
2
SOURCE  
R
R
<30 m @V =10V  
GS  
Ω
DS(ON)  
DS(ON)  
<42 m @V =4.5V  
Ω
GS  
3
*Rugged and Reliable  
*SOT-23 Package  
1
2
SOT-23  
Maximum Ratings (TA=25 C Unless Otherwise Specified)  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
Value  
30  
Unite  
V
DS  
V
GS  
V
V
A
+
20  
-
(1)  
(1)  
Continuous Drain Current (T =125 C)  
J
I
D
4.6  
(2)  
16  
Pulsed Drain Current  
I
A
A
DM  
I
Drain-Source Diode Forward Current  
S
1.25  
1.25  
100  
(1)  
Power Dissipation  
P
W
D
Maximax Junction-to-Ambient  
R
C/W  
θ
JA  
Operating Junction and Storage  
Temperature Range  
T ,Tstg  
J
-55 to 150  
C
Device Marking  
WT3402=T02  
WEITRON  
http://www.weitron.com.tw  
WT-3402  
Electrical Characteristics (T =25 C Unless otherwise noted)  
A
Min  
Typ  
Max  
Characteristic  
Symbol  
Unit  
(2)  
Static  
Drain-Source Breakdown Voltage  
V =0V, I =250 uA  
V
(BR)DSS  
-
1.5  
-
-
V
V
30  
1
D
GS  
Gate-Source Threshold Voltage  
V =V , I =250 uA  
V
GS (th)  
2.5  
D
DS GS  
Gate-Source Leakage Current  
I
+
-
-
GSS  
100  
nA  
uA  
+
-
GS  
V =0V,V = 20V  
DS  
Zero Gate Voltage Drain Current  
V =24V,V =0V  
I
-
-
DSS  
1
DS  
GS  
rDS (on)  
Drain-Source On-Resistance  
V =10V, I =4.6A  
mΩ  
-
-
30  
42  
26  
38  
GS  
D
V =4.5V, I =4.0A  
GS  
D
On-State Drain Current  
V =5V,V =4.5A  
I
D(on)  
-
-
-
10  
-
A
S
DS  
GS  
Forward Transconductance  
V =5V, I =4.6A  
g
fs  
5
DS  
D
(3)  
Dynamic  
Input Capacitance  
V =15V,V =0V, f=1MHZ  
C
-
-
-
iss  
-
-
782  
135  
93  
DS  
GS  
Output Capacitance  
V =15V,V =0V, f=1MHZ  
C
oss  
F
P
DS  
GS  
Reverse Transfer Capacitance  
V =15V,V =0V, f=1MHZ  
C
rss  
-
DS  
GS  
(3)  
Switching  
Turn-On Delay Time  
t
-
-
-
-
-
-
nS  
nS  
d(on)  
4.8  
3.9  
Ω
V
= 10V,V =15V, I =1A, R =15 ,R =6Ω  
GS  
GEN  
L
DD  
D
Rise Time  
= 10V,V =15V, I =1A, R =15 ,R =6Ω  
t
r
Ω
V
GS  
GEN  
L
DD  
D
Turn-Off Delay Time  
= 10V,V =15V, I =1A, R =15 ,R =6Ω  
t
nS  
nS  
27.7  
5.5  
d(off)  
-
-
Ω
V
GS  
GEN  
L
DD  
D
Fall Time  
= 10V,V =15V, I =1A, R =15 ,R =6Ω  
t
f
Ω
V
GS  
GEN  
L
DD  
D
Total Gate Charge  
V =15V, I =4.6A,V =10V  
-
-
-
-
nc  
nc  
nc  
Qg  
15.8  
2
GS  
DS  
D
Gate-Source Charge  
V =15V, I =4.6A,V =10V  
Qgs  
-
-
GS  
DS  
D
Gate-Drain Charge  
V =15V, I =4.6A,V =10V  
3
Qgd  
GS  
DS  
D
Diode Forward Voltage  
Drain-Source  
-
0.78  
1.2  
VSD  
V
V =0V, I =1.25A  
GS  
S
<
Note:  
_
1. Surface Mounted on FR4 Board t 10sec.  
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.  
3. Guaranteed by Design, not Subject to Production Testing.  
WEITRON  
http://www.weitron.com.tw  
WT-3402  
WE ITR ON  
25  
20  
15  
10  
20  
VGS=4V  
VGS=10,9,8,7,6,5V  
16  
12  
25 C  
8
4
0
Tj =125 C  
VGS=3V  
-55 C  
5
0
0.0 0.5  
1
1.5  
2
2.5  
3
2
4
6
8
10  
12  
0
V
GS  
, GATE-TO-SOURCE VOLTAGE(V)  
V
, DRAIN-TO-SOURCE VOLTAGE(V)  
DS  
FIG.2 Transfer Characteristics  
FIG.1. Output Characteristics  
2.2  
1.8  
VGS=10V  
ID=4.6A  
1250  
1000  
750  
500  
250  
0
1.4  
1.0  
Ciss  
0.6  
0.2  
0
Coss  
Crss  
0
5
10  
15  
20  
25  
30  
-50 -25  
0
25 50 75 100 125  
T ( C)  
j
V
DS  
, DRAIN-TO-SOURCE VOLTAGE(V)  
FIG.4 On-Resistance Variation with  
Temperature  
FIG.3 Capacitance  
1.3  
1.2  
VDS=VGS  
ID =250uA  
1.3  
ID =250uA  
1.2  
1.1  
1.1  
1.0  
0.9  
1.0  
0.9  
0.8  
0.7  
0.8  
0.7  
0.6  
-50 -25  
0
25 50  
75 100 125  
-50 -25  
0
25 50 75 100 125  
T ,JUNCTION TEMPERATURE( C)  
j
T ,JUNCTION TEMPERATURE( C)  
j
FIG.5 Gate Threshold Variation  
with Temperature  
FIG.6 Breakdown Voltage Variation  
with Temperature  
WEITRON  
http://www.weitron.com.tw  
WT-3402  
WE ITR ON  
24  
20  
16  
12  
20  
10  
8
4
VDS=5V  
20  
TJ =25 C  
1
0.4  
0
0.6  
0.8  
1.0  
1.2  
1.4  
0
5
10  
15  
25  
I
,DRAIN-SOURCE CURRENT(A)  
V
SD  
,BODY DIODE FORWARD VOLTAGE(V)  
DS  
FIG.7 Transconductance Variation  
with Drain Current  
FIG.8 Body Diode Forward Voltage  
Variation with Source Current  
50  
10  
t
i
VDS=15V  
ID =4.6A  
m
i
L
)
8
10  
N
1
O
0
m
(
R DS  
s
1
0
0
m
s
6
4
2
0
11  
1
s
D
C
VGS=10V  
Single Pulse  
TC=25 C  
0.1  
0.03  
0.1  
1
10 20 50  
0
2
4
6
8
10 12 14 16  
V
DS  
,DRAIN-SOURCE CURRENT(V)  
Q ,TOTAL GATE CHARGE(nC)  
g
FIG.10 Maximum Safe Operating Area  
FIG.9 Gate Charge  
V
DD  
on  
t
t
off  
d(off)  
t
r
t
d(on)  
t
f
t
R
L
V
IN  
90%  
10%  
90%  
D
OUT  
V
OUT  
V
V
10%  
INVE R TE D  
VG S  
R
G E N  
G
90%  
50%  
50%  
IN  
S
10%  
P ULS E WIDTH  
FIG.11 Switching Test Circuit  
FIG.12 Switching Waveforms  
WEITRON  
http://www.weitron.com.tw  
WT-3402  
WE ITR ON  
10  
1
0.5  
0.2  
DM  
P
0.1  
1
t
0.1  
2
t
0.05  
0.02  
1. R jA (t)=r (t) * R j  
θ A  
θ
2. R j =See Datasheet  
A
θ
3. Tj  
M-TA = PDM* R j (t)  
A
θ
Single Pulse  
0.01  
1
4. Duty Cycle, D=t /t  
2
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10 100  
1000  
SQUARE WAVE PULSE DURATION(SEC)  
FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE  
WEITRON  
http://www.weitron.com.tw  
WT-3402  
SOT-23 Package Outline Dimensions  
Unit:mm  
A
Dim  
A
B
C
D
Min Max  
0.35 0.51  
1.19 1.40  
2.10 3.00  
0.85 1.05  
0.46 1.00  
1.70 2.10  
2.70 3.10  
0.01 0.13  
0.89 1.10  
0.30 0.61  
0.076 0.25  
B
TOP VIE W  
C
E
G
H
J
K
L
D
G
H
E
K
M
L
J
M
WEITRON  
http://www.weitron.com.tw  
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