WT-2306
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Min
Typ
Max
Characteristic
Symbol
Unit
(2)
Static
Drain-Source Breakdown Voltage
V =0V, I =250 uA
V
(BR)DSS
-
-
-
-
V
V
20
0.6
-
D
GS
Gate-Source Threshold Voltage
V =V , I =250 uA
V
GS (th)
1.5
D
DS GS
Gate-Source Leakage Current
+
-
I
100
GSS
nA
uA
+
-
GS
V =0V,V = 8V
DS
Zero Gate Voltage Drain Current
V =18V,V =0V
I
-
-
DSS
1
DS
GS
rDS (on)
Drain-Source On-Resistance
V =4.0V, I =2.8A
mΩ
70
95
-
-
GS
D
V =2.5V, I =2.0A
GS
D
Forward Transconductance
V =7V, I =5A
g
fs
-
5
S
-
DS
D
(3)
Dynamic
Input Capacitance
V =10V,V =0V, f=1MHZ
C
-
-
iss
-
-
608
114
86
DS
GS
Output Capacitance
V =10V,V =0V, f=1MHZ
C
oss
PF
DS
GS
Reverse Transfer Capacitance
V =10V,V =0V, f=1MHZ
C
rss
-
-
DS
GS
(3)
Switching
Turn-On Delay Time
t
-
-
-
-
10
14
-
-
nS
nS
d(on)
V
Ω
=4.5V,V =10V, I =1A, R =10 ,R =10Ω
GEN
L
GEN
DD
D
Rise Time
t
r
V
Ω
=4.5V,V =10V, I =1A, R =10 ,R =10Ω
GEN
L
GEN
DD
D
Turn-Off Delay Time
V
t
nS
nS
39
26
d(off)
-
-
Ω
=4.5V,V =10V, I =1A, R =10 ,R =10Ω
GEN
L
GEN
DD
D
Fall Time
t
f
V
Ω
=4.5V,V =10V, I =1A, R =10 ,R =10Ω
GEN
L
GEN
DD
D
Total Gate Charge
V =10V, I =1A,V =4.5V
-
-
-
-
nc
Qg
9.2
GS
DS
D
Gate-Source Charge
V =10V, I =1A,V =4.5V
Qgs
Qgd
1.6
2.6
nc
nc
-
-
GS
DS
D
Gate-Drain Charge
V =10V, I =1A,V =4.5V
GS
DS
D
Diode Forward Voltage
Drain-Source
-
0.84
1.3
VSD
V
V =0V, I =1.25A
GS
S
<
Note:
_
1. Surface Mounted on FR4 Board t 10sec.
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.
2. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw
