Advanced Technical Information
HiPerFETTM
PowerMOSFETs
Q-Class
VDSS
ID25
= 600 V
52 A
IXFK 52N60Q2
IXFX 52N60Q2
=
RDS(on) = 115 mΩ
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
Symbol
TestConditions
Maximum Ratings
PLUS247TM (IXFX)
VDSS
VDGR
T
= 25°C to 150°C
600
600
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
30
40
V
V
D (TAB)
ID25
IDM
IAR
T
= 25°C
52
208
52
A
A
A
TC = 25°C, pulse width limited by TJM
G
D
TCC = 25°C
EAR
EAS
T
= 25°C
75
4.0
mJ
J
TCC = 25°C
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
20
V/ns
TO-264 AA (IXFK)
PD
TC = 25°C
735
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
D
S
D (TAB)
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
G = Gate
S = Source
D = Drain
TAB = Drain
Md
Mountingtorque
TO-264
0.9/6 Nm/lb.in.
Weight
PLUS-247
TO-264
6
10
g
g
Features
z
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Symbol
TestConditions
Characteristic Values
z
z
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8 mA
600
2.0
V
V
z
z
VGS(th)
4.5
IGSS
IDSS
VGS = 30 VDC, VDS = 0
200 nA
Advantages
VDS = V
T = 25°C
TJJ = 125°C
50 µA
VGS = 0 DVSS
2
mA
z
Easy to mount
Space savings
z
RDS(on)
V
= 10 V, ID = 0.5 • I
115 mΩ
PuGSlse test, t ≤ 300 µs,Dd2u5 ty cycle d ≤ 2 %
z
High power density
DS98982A(12/03)
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