SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
FZT857
ISSUE 5 - AUGUST 2003
FEATURES
*
*
*
*
Up to 3.5 Am ps continuous collector current, up to 5 Am p peak
VCEO = 300V
Very low saturation voltage
C
Excellent hFE specified up to 3 Am ps
E
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
FZT857
FZT957
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Co lle cto r-Ba s e Vo lta g e
350
Co lle cto r-Em itte r Vo lta g e
Em itte r-Ba s e Vo lta g e
300
V
6
V
Pe a k Pu ls e Cu rre n t
5
A
Co n tin u o u s Co lle cto r Cu rre n t
Po w e r Dis s ip a tio n a t Ta m b=25°C
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
IC
3.5
3
A
Pto t
W
°C
Tj:Ts tg
-55 to +150
*The power which can be dissipated assum ing the device is m ounted in a typical m anner on a
P.C.B. with copper equal to 2 inches square.
