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QT113-ISG

型号:

QT113-ISG

描述:

电荷转移触摸传感器[ CHARGE-TRANSFER TOUCH SENSOR ]

品牌:

QUANTUM[ QUANTUM RESEARCH GROUP ]

页数:

12 页

PDF大小:

343 K

lQ  
QProx™ QT113  
OUCH  
C
HARGE-TRANSFER  
T
S
ENSOR  
Projects a proximity field through air or any insulator  
Less expensive than many mechanical switches  
Sensitivity easily adjusted  
Vdd  
Out  
1
2
3
4
8
7
6
5
Vss  
Consensus filter for noise immunity  
100% autocal for life - no adjustments required  
2.5 to 5V, 600µA single supply operation  
Toggle mode for on/off control (strap option)  
10s, 60s, infinite auto-recal timeouts (strap options)  
HeartBeat™ health indicator on output  
Only one external part required - a 1¢ capacitor  
Lead-Free package  
Sns2  
Sns1  
Gain  
Opt1  
Opt2  
APPLICATIONS -  
Light switches  
Prox sensors  
Appliance control  
Security systems  
Access systems  
Pointing devices  
Elevator buttons  
Consumer devices  
The QT113 charge-transfer (“QT’”) touch sensor is a self-contained digital IC capable of detecting near-proximity or touch. It  
will project a proximity sense field through air, and any dielectric like glass, plastic, stone, ceramic, and most kinds of wood. It  
can also turn small metal-bearing objects into intrinsic sensors, making them responsive to proximity or touch. This capability  
coupled with its ability to self calibrate continuously can lead to entirely new product concepts.  
It is designed specifically for human interfaces, like control panels, appliances, toys, lighting controls, or anywhere a  
mechanical switch or button may be found; it may also be used for some material sensing and control applications provided  
that the presence duration of objects does not exceed the recalibration timeout interval.  
Power consumption is only 600µA in most applications. In most cases the power supply need only be minimally regulated, for  
example by Zener diodes or an inexpensive 3-terminal regulator. The QT113 requires only a common inexpensive capacitor  
in order to function.  
The QT113’s RISC core employs signal processing techniques pioneered by Quantum; these are specifically designed to  
make the device survive real-world challenges, such as ‘stuck sensor’ conditions and signal drift.  
The option-selectable toggle mode permits on/off touch control, for example for light switch replacement. The  
Quantum-pioneered HeartBeat™ signal is also included, allowing a microcontroller to monitor the health of the QT113  
continuously if desired. By using the charge transfer principle, the IC delivers a level of performance clearly superior to older  
technologies in a highly cost-effective package.  
AVAILABLE OPTIONS  
TA  
00C to +700C  
-400C to +850C  
SOIC  
-
8-PIN DIP  
QT113-DG  
-
QT113-ISG  
Copyright 1999-2004 QRG Ltd  
R1.05/0405  
Figure 1-1 Basic Circuit Configuration  
1 - OVERVIEW  
+2.5 to 5  
The QT113 is a digital burst mode charge-transfer (QT)  
sensor designed specifically for touch controls; it includes all  
hardware and signal processing functions necessary to  
provide stable sensing under a wide variety of changing  
conditions. Only a single low cost, non-critical capacitor is  
required for operation.  
SENSING  
ELECTRODE  
1
R
SERIES  
Vdd  
2
3
4
7
5
6
OUT  
SNS2  
GAIN  
SNS1  
Figure 1-1 shows a basic circuit using the device.  
Cs  
1.1 BASIC OPERATION  
OPT1  
OPT2  
10nF  
The QT113 employs bursts of charge-transfer cycles to  
acquire its signal. Burst mode permits power consumption in  
the microamp range, dramatically reduces RF emissions,  
lowers susceptibility to EMI, and yet permits excellent  
response time. Internally the signals are digitally processed  
to reject impulse noise, using a 'consensus' filter which  
requires three consecutive confirmations of a detection  
before the output is activated.  
Cx  
Vss  
OUTPUT=DC  
TIMEOUT=10 Secs  
TOGGLE=OFF  
GAIN=HIGH  
8
1.2 ELECTRODE DRIVE  
The QT switches and charge measurement hardware  
functions are all internal to the QT113 (Figure 1-2). A 14-bit  
single-slope switched capacitor ADC includes both the  
required QT charge and transfer switches in a configuration  
that provides direct ADC conversion. The ADC is designed to  
dynamically optimize the QT burst length according to the  
rate of charge buildup on Cs, which in turn depends on the  
values of Cs, Cx, and Vdd. Vdd is used as the charge  
reference voltage. Larger values of Cx cause the charge  
transferred into Cs to rise more rapidly, reducing available  
resolution; as a minimum resolution is required for proper  
operation, this can result in dramatically reduced apparent  
gain. Conversely, larger values of Cs reduce the rise of  
differential voltage across it, increasing available resolution  
by permitting longer QT bursts. The value of Cs can thus be  
increased to allow larger values of Cx to be tolerated (Figures  
4-1, 4-2, 4-3 in Specifications, rear).  
The internal ADC treats Cs as a floating transfer capacitor; as  
a result, the sense electrode can in theory be connected to  
either SNS1 or SNS2 with no performance difference.  
However the electrode should only be connected to pin SNS2  
for optimum noise immunity.  
In all cases the rule Cs >> Cx must be observed for proper  
operation; a typical load capacitance (Cx) ranges from  
10-20pF while Cs is usually around 10-50nF.  
Increasing amounts of Cx destroy gain; therefore it is  
important to limit the amount of stray capacitance on both  
SNS terminals, for example by minimizing trace lengths and  
widths and keeping these traces away from power or ground  
traces or copper pours.  
The traces and any components associated with SNS1 and  
SNS2 will become touch sensitive and should be treated with  
caution to limit the touch area to the desired location.  
The IC is responsive to both Cx and Cs, and changes in Cs  
can result in substantial changes in sensor gain.  
A series resistor, Rseries, should be placed inline with the  
SNS2 pin to the electrode to suppress ESD and EMC effects.  
Option pins allow the selection or alteration of several special  
features and sensitivity.  
1.3 ELECTRODE DESIGN  
1.3.1 ELECTRODE  
G
EOMETRY AND  
S
IZE  
There is no restriction on the shape of  
the electrode; in most cases common  
sense and a little experimentation can  
result in a good electrode design. The  
QT113 will operate equally well with  
long, thin electrodes as with round or  
square ones; even random shapes are  
acceptable. The electrode can also be  
a 3-dimensional surface or object.  
Sensitivity is related to electrode  
surface area, orientation with respect  
to the object being sensed, object  
composition, and the ground coupling  
quality of both the sensor circuit and  
the sensed object.  
Figure 1-2 Internal Switching & Timing  
ELECTRODE  
Result  
SNS2  
Cs  
Start  
Cx  
Done  
SNS1  
If a relatively large electrode surface is  
desired, and if tests show that the  
electrode has more capacitance than  
the QT113 can tolerate, the electrode  
can be made into a sparse mesh  
(Figure 1-3) having lower Cx than a  
C harge  
Amp  
lQ  
2
R1.05/0405  
solid plane. Sensitivity may even remain the same, as the  
sensor will be operating in a lower region of the gain curves.  
equally well. Shielding in the form of a metal sheet or foil  
connected to circuit ground will prevent walk-by; putting a  
small air gap between the grounded shield and the electrode  
will keep the value of Cx lower to reduce loading and keep  
gain high.  
1.3.2 KIRCHOFF  
S
C
URRENT  
L
AW  
Like all capacitance sensors, the QT113 relies on Kirchoff’s  
Current Law (Figure 1-3) to detect the change in capacitance  
of the electrode. This law as applied to capacitive sensing  
1.3.5 SENSITIVITY  
requires that the sensor’s field current must complete a loop, The QT113 can be set for one of 2 gain levels using option  
returning back to its source in order for capacitance to be pin 5 (Table 1-1). This sensitivity change is made by altering  
sensed. Although most designers relate to Kirchoff’s law with the internal numerical threshold level required for a detection.  
regard to hardwired circuits, it applies equally to capacitive  
field flows. By implication it requires that the signal ground  
and the target object must both be coupled together in some  
Note that sensitivity is also a function of other things: like the  
value of Cs, electrode size and capacitance, electrode shape  
and orientation, the composition and aspect of the object to  
manner for a capacitive sensor to operate properly. Note that be sensed, the thickness and composition of any overlaying  
panel material, and the degree of ground coupling of both  
sensor and object.  
there is no need to provide actual hardwired ground  
connections; capacitive coupling to ground (Cx1) is always  
sufficient, even if the coupling might seem very tenuous. For  
example, powering the sensor via an isolated transformer will  
provide ample ground coupling, since there is capacitance  
between the windings and/or the transformer core, and from  
the power wiring itself directly to 'local earth'. Even when  
battery powered, just the physical size of the PCB and the  
object into which the electronics is embedded will generally  
be enough to couple a few picofarads back to local earth.  
1.3.5.1 Increasing Sensitivity  
In some cases it may be desirable to increase sensitivity  
further, for example when using the sensor with very thick  
panels having a low dielectric constant.  
Sensitivity can often be increased by using a bigger  
electrode, reducing panel thickness, or altering panel  
composition. Increasing electrode size can have diminishing  
returns, as high values of Cx will reduce sensor gain (Figures  
4-1 to 4-3). The value of Cs also has a dramatic effect on  
sensitivity, and this can be increased in value with the  
tradeoff of reduced response time. Increasing the electrode's  
surface area will not substantially increase touch sensitivity if  
its diameter is already much larger in surface area than the  
object being detected. Panel material can also be changed to  
one having a higher dielectric constant, which will help  
propagate the field. Metal areas near the electrode will  
reduce the field strength and increase Cx loading.  
1.3.3 VIRTUAL  
C
APACITIVE  
G
ROUNDS  
When detecting human contact (e.g. a fingertip), grounding  
of the person is never required. The human body naturally  
has several hundred picofarads of ‘free space’ capacitance to  
the local environment (Cx3 in Figure 1-3), which is more than  
two orders of magnitude greater than that required to create  
a return path to the QT113 via earth. The QT113's PCB  
however can be physically quite small, so there may be little  
‘free space’ coupling (Cx1 in Figure 1-3) between it and the  
environment to complete the return path. If the QT113 circuit  
ground cannot be earth grounded by wire, for example via  
the supply connections, then a ‘virtual capacitive ground’ may  
be required to increase return coupling.  
Ground planes around and under the electrode and its SNS  
trace will cause high Cx loading and destroy gain. The  
possible signal-to-noise ratio benefits of ground area are  
more than negated by the decreased gain from the circuit,  
and so ground areas around electrodes are discouraged.  
Keep ground away from the electrodes and traces.  
A ‘virtual capacitive ground’ can be created by connecting the  
QT113’s own circuit ground to:  
- A nearby piece of metal or metallized housing;  
- A floating conductive ground plane;  
- Another electronic device (to which its output might be  
connected anyway).  
1.3.5.2 Decreasing Sensitivity  
In some cases the QT113 may be too sensitive, even on low  
gain. In this case gain can be lowered further by decreasing  
Cs.  
Free-floating ground planes such as metal foils should  
maximize exposed surface area in a flat plane if possible. A  
square of metal foil will have little effect if it is rolled up or  
crumpled into a ball. Virtual ground planes are more effective  
and can be made smaller if they are physically bonded to  
other surfaces, for example a wall or floor.  
Figure 1-3 Kirchoff's Current Law  
C
X2  
1.3.4 FIELD  
S
HAPING  
The electrode can be prevented from sensing in undesired  
directions with the assistance of metal shielding connected to  
circuit ground (Figure 1-4). For example, on flat surfaces, the  
field can spread laterally and create a larger touch area than  
desired. To stop field spreading, it is only necessary to  
surround the touch electrode on all sides with a ring of metal  
connected to circuit ground; the ring can be on the same or  
opposite side from the electrode. The ring will kill field  
spreading from that point outwards.  
Sense E lectrode  
SENSOR  
C
X1  
If one side of the panel to which the electrode is fixed has  
moving traffic near it, these objects can cause inadvertent  
detections. This is called ‘walk-by’ and is caused by the fact  
that the fields radiate from either surface of the electrode  
C
X3  
Surrounding environm ent  
lQ  
3
R1.05/0405  
become insensitive to touch. In this latter case, the sensor  
will compensate for the object's removal very quickly, usually  
in only a few seconds.  
Figure 1-4 Shielding Against Fringe Fields  
With large values of Cs and small values of Cx, drift  
compensation will appear to operate more slowly than with  
the converse. Note that the positive and negative drift  
compensation rates are different.  
2.1.2 THRESHOLD  
C
ALCULATION  
The internal threshold level is fixed at one of two setting as  
determined by Table 1-1. These settings are fixed with  
respect to the internal reference level, which in turn will move  
in accordance with the drift compensation mechanism.  
Sense  
wire  
Sense  
wire  
The QT113 employs a hysteresis dropout below the  
threshold level of 17% of the delta between the reference and  
threshold levels.  
2.1.3 MAX  
ON-DURATION  
If an object or material obstructs the sense pad the signal  
may rise enough to create a detection, preventing further  
operation. To prevent this, the sensor includes a timer which  
monitors detections. If a detection exceeds the timer setting,  
the timer causes the sensor to perform a full recalibration  
(when not set to infinite). This is known as the Max  
On-Duration feature.  
Unshielded  
Electrode  
Shielded  
Electrode  
Table 1-1 Gain Setting Strap Options  
2 - QT113 SPECIFICS  
Gain  
Tie Pin 5 to:  
Vdd  
2.1 SIGNAL PROCESSING  
High - 6 counts  
Low - 12 counts  
The QT113 processes all signals using 16 bit math, using a  
number of algorithms pioneered by Quantum. The algorithms  
are specifically designed to provide for high 'survivability' in  
the face of numerous adverse environmental changes.  
Vss (Gnd)  
After the Max On-Duration interval, the sensor will once again  
function normally to the best of its ability given electrode  
conditions. There are two finite timeout durations available  
via strap option: 10 and 60 seconds (Table 2-1).  
2.1.1 DRIFT  
C
OMPENSATION  
A
LGORITHM  
Signal drift can occur because of changes in Cx and Cs over  
time. It is crucial that drift be compensated for, otherwise  
false detections, non-detections, and sensitivity shifts will  
follow.  
2.1.4 DETECTION  
I
NTEGRATOR  
It is desirable to suppress detections generated by electrical  
noise or from quick brushes with an object. To accomplish  
this, the QT113 incorporates a detect integration counter that  
increments with each detection until a limit is reached, after  
which the output is activated. If no detection is sensed prior  
to the final count, the counter is reset immediately to zero. In  
the QT113, the required count is 3.  
Drift compensation (Figure 2-1) is performed by making the  
reference level track the raw signal at a slow rate, but only  
while there is no detection in effect. The rate of adjustment  
must be performed slowly, otherwise legitimate detections  
could be ignored. The QT113 drift compensates using a  
slew-rate limited change to the reference level; the threshold  
and hysteresis values are slaved to this reference.  
The Detection Integrator can also be viewed as a 'consensus'  
filter, that requires three successive detections to create an  
output.  
Once an object is sensed, the drift compensation mechanism  
ceases since the signal is legitimately high, and  
therefore should not cause the reference level to  
change.  
Figure 2-1 Drift Compensation  
The QT113's drift compensation is 'asymmetric':  
the reference level drift-compensates in one  
direction faster than it does in the other.  
Signal  
Hysteresis  
Specifically, it compensates faster for decreasing  
signals than for increasing signals. Increasing  
signals should not be compensated for quickly,  
since an approaching finger could be  
Threshold  
Reference  
compensated for partially or entirely before even  
approaching the sense electrode. However, an  
obstruction over the sense pad, for which the  
sensor has already made full allowance for, could  
suddenly be removed leaving the sensor with an  
artificially elevated reference level and thus  
Output  
lQ  
4
R1.05/0405  
Vdd do not cause the device to stick oninadvertently even  
when the target object is removed from the sense field.  
2.1.5 FORCED  
S
ENSOR  
R
ECALIBRATION  
The QT113 has no recalibration pin; a forced recalibration is  
accomplished only when the device is powered up. However,  
supply drain is low so it is a simple matter to treat the entire  
IC as a controllable load; simply driving the QT113's Vdd pin  
directly from another logic gate or a microcontroller port  
(Figure 2-2) will serve as both power and 'forced recal'. The  
2.2.2 TOGGLE  
M
ODE  
O
UTPUT  
This makes the sensor respond in an on/off mode like a flip  
flop. It is most useful for controlling power loads, for example  
in kitchen appliances, power tools, light switches, etc.  
source resistance of most CMOS gates and microcontrollers Max On-Duration in Toggle mode is fixed at 10 seconds.  
are low enough to provide direct power without problem. Note When a timeout occurs, the sensor recalibrates but leaves  
that many 8051-based micros have only a weak pullup drive  
capability and will require CMOS buffering. 74HC or 74AC  
series gates can directly power the QT113, as can most other  
microcontrollers.  
the output toggle state unchanged.  
2.2.3 HEART  
BEATOUTPUT  
The QT113 output has a full-time HeartBeat™ ‘health’  
indicator superimposed on it. This operates by taking 'Out'  
into a 3-state mode for 300µs once after every QT burst. This  
output state can be used to determine that the sensor is  
operating properly, or, it can be ignored using one of several  
simple methods.  
Option strap configurations are read by the QT113 only on  
powerup. Configurations can only be changed by powering  
the QT113 down and back up again; again, a microcontroller  
can directly alter most of the configurations and cycle power  
to put them in effect.  
Table 2-1 Output Mode Strap Options  
2.1.6 RESPONSE  
T
IME  
The QT113's response time is highly dependent on burst  
length, which in turn is dependent on Cs and Cx (see Figures  
4-1, 4-2). With increasing Cs, response time slows, while  
increasing levels of Cs reduce response time. Figure 4-3  
shows the typical effects of Cs and Cx on response time.  
Tie  
Pin 3 to:  
Tie  
Pin 4 to:  
Max On-  
Duration  
Vdd  
Vdd  
Gnd  
Gnd  
Vdd  
Gnd  
Gnd  
Vdd  
10s  
60s  
DC Out  
DC Out  
Toggle  
DC Out  
10s  
2.2 OUTPUT FEATURES  
infinite  
The QT113 is designed for maximum flexibility and can  
accommodate most popular sensing requirements. These  
are selectable using strap options on pins OPT1 and OPT2.  
All options are shown in Table 2-1.  
The HeartBeat indicator can be sampled by using a pulldown  
resistor on Out, and feeding the resulting negative-going  
pulse into a counter, flip flop, one-shot, or other circuit. Since  
Out is normally high, a pulldown resistor will create negative  
HeartBeat pulses (Figure 2-3) when the sensor is not  
detecting an object; when detecting an object, the output will  
remain low for the duration of the detection, and no  
HeartBeat pulse will be evident.  
2.2.1 DC MODE  
O
UTPUT  
The output of the QT113 can respond in a DC mode, where  
the output is active-low upon detection. The output will  
remain active-low for the duration of the detection, or until the  
Max On-Duration expires (if not infinite), whichever occurs  
first. If a max on-duration timeout occurs first, the sensor  
performs a full recalibration and the output becomes inactive  
until the next detection.  
If the sensor is wired to a microcontroller as shown in Figure  
2-4, the microcontroller can reconfigure the load resistor to  
either ground or Vcc depending on the output state of the  
QT113, so that the pulses are evident in either state.  
In this mode, three Max On-Duration timeouts are available:  
10 seconds, 60 seconds, and infinite.  
Electromechanical devices like relays will usually ignore this  
short pulse. The pulse also has too low a duty cycle to visibly  
affect LEDs. It can be filtered completely if desired, by  
adding an RC timeconstant to filter the output, or if interfacing  
directly and only to a high-impedance CMOS input, by doing  
nothing or at most adding a small non-critical capacitor from  
Out to ground (Figure 2-5).  
Infinite timeout is useful in applications where a prolonged  
detection can occur and where the output must reflect the  
detection no matter how long. In infinite timeout mode, the  
designer should take care to be sure that drift in Cs, Cx, and  
2.2.4 OUTPUT  
D
RIVE  
Figure 2-2 Powering From a CMOS Port Pin  
The QT113s `output is active low and can sink up to 5mA of  
non-inductive current. If an inductive load is used, such as a  
small relay, the load should be diode clamped to prevent  
damage. When set to operate in a proximity mode (at high  
gain) the current should be limited to 1mA to prevent gain  
shifting side effects from occurring, which happens when the  
load current creates voltage drops on the die and bonding  
wires; these small shifts can materially influence the signal  
level to cause detection instability as described below.  
PORT X.m  
0.01µF  
CMOS  
microcontroller  
Vdd  
PORT X.n  
OUT  
QT113  
Care should be taken when the QT113 and the load are both  
powered from the same supply, and the supply is minimally  
regulated. The QT113 derives its internal references from the  
power supply, and sensitivity shifts can occur with changes in  
Vdd, as happens when loads are switched on. This can  
Vss  
lQ  
5
R1.05/0405  
Figure 2-3  
Getting HearBeat pulses with a pull-down resistor  
Figure 2-4  
Using a micro to obtain HB pulses in either output state  
+2.5 to 5  
HeartBeat™ Pulses  
1
PORT_M.x  
2
3
4
7
5
6
OUT  
SNS2  
GAIN  
SNS1  
Vdd  
2
3
4
7
5
6
R
o
OUT  
SNS2  
GAIN  
SNS1  
Ro  
Microcontroller  
OPT1  
OPT2  
OPT1  
OPT2  
PORT_M.y  
Vss  
8
induce detection cycling, whereby an object is detected, the  
load is turned on, the supply sags, the detection is no longer  
sensed, the load is turned off, the supply rises and the object  
is reacquired, ad infinitum. To prevent this occurrence, the  
output should only be lightly loaded if the device is operated  
from an unregulated supply, e.g. batteries. Detection  
stiction, the opposite effect, can occur if a load is shed when  
Out is active.  
there are no pullup resistors on these lines, since pullup  
resistors add to power drain if tied low.  
The Gain input should be connected to either Vdd or Gnd.  
Tables 1-1 and 2-1 show the option strap configurations  
available.  
3.4 POWER SUPPLY, PCB LAYOUT  
The power supply can range from 2.5 to 5.0 volts. At 3 volts  
current drain averages less than 600µA in most cases, but  
can be higher if Cs is large. Increasing Cx values will actually  
decrease power drain. Operation can be from batteries, but  
be cautious about loads causing supply droop (see Output  
Drive, Section 2.2.4).  
The output of the QT113 can directly drive a resistively  
limited LED. The LED should be connected with its cathode  
to the output and its anode towards Vcc, so that it lights when  
the sensor is active. If desired the LED can be connected  
from Out to ground, and driven on when the sensor is  
inactive.  
As battery voltage sags with use or fluctuates slowly with  
temperature, the QT113 will track and compensate for these  
changes automatically with only minor changes in sensitivity.  
3 - CIRCUIT GUIDELINES  
3.1 SAMPLE CAPACITOR  
If the power supply is shared with another electronic system,  
care should be taken to assure that the supply is free of  
digital spikes, sags, and surges which can adversely affect  
the QT113. The QT113 will track slow changes in Vdd, but it  
can be affected by rapid voltage steps.  
Charge sampler Cs can be virtually any plastic film or  
medium-K ceramic capacitor. The acceptable Cs range is  
from 10nF to 500nF depending on the sensitivity required;  
larger values of Cs demand higher stability to ensure reliable  
sensing. Acceptable capacitor types include PPS film,  
polypropylene film, NPO/C0G ceramic, and X7R ceramic.  
if desired, the supply can be regulated using a conventional  
low current regulator, for example CMOS regulators that have  
low quiescent currents. Bear in mind that such regulators  
generally have very poor transient line and load stability; in  
some cases, shunting Vdd to Vss with a 4.7K resistor to  
induce a continuous current drain can have a very positive  
effect on regulator performance.  
3.2 OPTION STRAPPING  
The option pins Opt1 and Opt2 should never be left floating.  
If they are floated, the device will draw excess power and the  
options will not be properly read on powerup. Intentionally,  
Parts placement: The chip should be placed to minimize the  
SNS2 trace length to reduce low frequency pickup, and to  
reduce stray Cx which degrades gain. The Cs and Rseries  
resistors (see Figure 1-1) should be placed as close to the  
body of the chip as possible so that the SNS2 trace between  
Rseries and the SNS2 pin is very short, thereby reducing the  
antenna-like ability of this trace to pick up high frequency  
signals and feed them directly into the chip.  
Figure 2-5 Eliminating HB Pulses  
GATE OR  
MICRO INPUT  
2
3
4
7
5
6
CM O S  
OUT  
SNS2  
GAIN  
SNS1  
Co  
For best EMC performance the circuit should be made  
entirely with SMT components.  
100pF  
OPT1  
OPT2  
SNS trace routing: Keep the SNS2 electrode trace (and the  
electrode itself) away from other signal, power, and ground  
traces including over or next to ground planes. Adjacent  
switching signals can induce noise onto the sensing signal;  
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R1.05/0405  
any adjacent trace or ground plane next to or under either  
SNS trace will cause an increase in Cx load and desensitize  
the device.  
The use of semiconductor transient protection devices,  
Zeners, or MOV's on the sense lead is not advised; these  
devices have extremely large amounts of parasitic  
capacitance which will swamp the QT113 and render it  
unstable or diminish gain.  
For proper operation a 100nF (0.1uF) ceramic bypass  
capacitor must be used directly between Vdd and Vss;  
the bypass cap should be placed very close to the  
device’s power pins.  
3.6 EMC ISSUES  
External AC fields (EMI) due to RF transmitters or electrical  
noise sources can cause false detections or unexplained  
shifts in sensitivity.  
3.5 ESD PROTECTION  
The QT113 includes internal diode protection on its pins to  
absorb and protect the device from most induced discharges,  
up to 20mA. The electrode should always be insulated  
against direct ESD; a glass or plastic panel is usually enough  
as a barrier to ESD. Glass breakdown voltages are typically  
over 10kV per mm thickness.  
The influence of external fields on the sensor is reduced by  
means of the Rseries described above in Section 3.5. The Cs  
capacitor and Rseries (see Figure 1-1) form a natural  
low-pass filter for incoming RF signals; the roll-off frequency  
of this network is defined by -  
1
ESD protection can be enhanced by adding a series resistor  
Rseries (see Figure 1-1) in line with the electrode, of value  
between 1K and 50K ohms. The optimal value depends on  
the amount of load capacitance Cx; a high value of Cx means  
Rseries has to be low. The pulse waveform on the electrode  
should be observed on an oscilloscope, and the pulse should  
look very flat just before the falling edge. If the pulse voltage  
never flattens, the gain of the sensor is reduced and there  
can be sensing instabilties.  
FR =  
2RseriesCs  
If for example Cs = 22nF, and Rseries = 10K ohms, the rolloff  
frequency to EMI is 723Hz, vastly lower than any credible  
external noise source (except for mains frequencies).  
However, Rseries and Cs must both be placed very close to  
the body of the IC so that the lead lengths between them and  
the IC do not form an unfiltered antenna at very high  
frequencies.  
Rseries and Cs should both be placed very close to the  
chip.  
lQ  
7
R1.05/0405  
4.1 ABSOLUTE MAXIMUM SPECIFICATIONS  
Operating temp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . as designated by suffix  
Storage temp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55OC to +125OC  
V
DD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +6.5V  
Max continuous pin current, any control or drive pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA  
Short circuit duration to ground, any pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . infinite  
Short circuit duration to VDD, any pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . infinite  
Voltage forced onto any pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.6V to (Vdd + 0.6) Volts  
4.2 RECOMMENDED OPERATING CONDITIONS  
DD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.5 to 5.5V  
V
Short-term supply ripple+noise. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mV  
Long-term supply stability. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mV  
Cs value. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10nF to 500nF  
Cx value. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 100pF  
4.3 AC SPECIFICATIONS Vdd = 3.0, Ta = recommended operating range, Cs=100nF unless noted  
Parameter  
Description  
Min  
Typ  
Max  
Units  
Notes  
T
RC  
PC  
Recalibration time  
550  
2
ms  
µs  
Cs, Cx dependent  
T
Charge duration  
Transfer duration  
Burst spacing interval  
Burst length  
T
PT  
BS  
2
µs  
T
2.1  
0.5  
80  
75  
ms  
ms  
ms  
µs  
Cs = 10nF to 500nF; Cx = 0  
Cs = 10nF to 500nF; Cx = 0  
Cx = 10pF; See Figure 4-3  
T
BL  
T
R
Response time  
30  
T
HB  
Heartbeat pulse width  
300  
4.4 SIGNAL PROCESSING  
Description  
Min  
Typ  
Max  
Units  
Notes  
Threshold differential  
6 or 12  
counts  
%
Option pin selected  
Note 1  
Hysteresis  
17  
Consensus filter length  
3
1,000  
samples  
ms/level  
ms/level  
secs  
Positive drift compensation rate  
Negative drift compensation rate  
Post-detection recalibration timer duration  
Note 1: Percentage of signal threshold  
100  
10, 60, infinite  
Option pin selected  
lQ  
8
R1.05/0405  
4.5 DC SPECIFICATIONS  
Vdd = 3.0V, Cs = 10nF, Cx = 5pF, T  
A
= recommended range, unless otherwise noted  
Parameter Description  
Min  
Typ  
Max  
Units  
Notes  
V
DD  
DD  
DDS  
Supply voltage  
2.45  
5.25  
V
µA  
V/s  
V
I
Supply current  
600  
1,500  
V
Supply turn-on slope  
Low input logic level  
High input logic level  
Low output voltage  
High output voltage  
Input leakage current  
Load capacitance range  
Acquisition resolution  
Sensitivity range  
100  
2.2  
Required for proper startup  
OPT1, OPT2  
V
IL  
0.8  
0.6  
V
HL  
V
OPT1, OPT2  
V
OL  
V
OUT, 4mA sink  
OUT, 1mA source  
OPT1, OPT2  
V
OH  
IL  
Vdd-0.7  
0
V
I
1
100  
14  
µA  
pF  
bits  
fF  
C
X
A
R
9
S
1,000  
28  
Note 2  
Note 2: Sensitivity depends on value of Cx and Cs. Refer to Figures 4-1, 4-2.  
Figure 4-2 - Typical Threshold Sensitivity vs. Cx,  
Low Gain, at Selected Values of Cs; Vdd = 3.0  
Figure 4-1 - Typical Threshold Sensitivity vs. Cx,  
High Gain, at Selected Values of Cs; Vdd = 3.0  
10.00  
10.00  
1.00  
1.00  
0.10  
0.01  
10nF  
10nF  
20nF  
20nF  
50nF  
50nF  
100nF  
200nF  
500nF  
100nF  
200nF  
0.10  
500nF  
0.01  
0
10  
20  
30  
40  
0
10  
20  
30  
40  
Cx Load, pF  
Cx Load, pF  
Chart 4-3 - Typical Response Time vs. Cx;  
Vdd = 3.0  
1000.00  
100.00  
10.00  
10nF  
20nF  
50nF  
100nF  
200nF  
500nF  
1.00  
0
10  
20  
30  
40  
Cx Load, pF  
lQ  
9
R1.05/0405  
4.6 MECHANICAL  
8-pin Dual-In-Line  
Millimeters  
Inches  
Max  
SYMBOL  
Min  
Max  
Notes  
Min  
Notes  
a
A
6.096  
7.62  
7.112  
8.255  
10.922  
7.62  
-
0.24  
0.3  
0.28  
0.325  
0.43  
0.3  
M
m
Q
P
9.017  
7.62  
Typical  
BSC  
0.355  
0.3  
Typical  
BSC  
0.889  
0.254  
0.355  
1.397  
2.489  
3.048  
0.381  
3.048  
-
0.035  
0.01  
0.014  
0.055  
0.098  
0.12  
0.015  
0.12  
-
-
-
-
L
0.559  
1.651  
2.591  
3.81  
-
0.022  
0.065  
0.102  
0.15  
-
L1  
F
Typical  
Typical  
R
r
S
3.556  
4.064  
7.062  
9.906  
0.381  
0.14  
0.16  
0.3  
S1  
Aa  
x
7.62  
BSC  
0.3  
BSC  
8.128  
0.203  
0.32  
0.008  
0.39  
0.015  
Y
8-pin SOIC  
Millimeters  
Max  
Inches  
Max  
SYMBOL  
Min  
Notes  
Min  
Notes  
M
W
Aa  
H
h
4.800  
5.816  
3.81  
4.979  
6.198  
3.988  
1.728  
0.762  
1.27  
0.189  
0.229  
0.15  
0.196  
0.244  
0.157  
0.068  
0.01  
0.05  
0.019  
0.04  
0.01  
0.03  
8º  
1.371  
0.101  
1.27  
0.054  
0.004  
0.050  
0.014  
0.02  
D
L
BSC  
BSC  
0.355  
0.508  
0.19  
0.483  
1.016  
0.249  
0.762  
8º  
E
e
0.007  
0.229  
0º  
ß
0.381  
0º  
Ø
lQ  
10  
R1.05/0405  
5 - ORDERING INFORMATION  
PART  
TEMP RANGE  
PACKAGE  
MARKING  
QT113-DG  
0 - 70C  
PDIP  
QT113-G  
Lead-Free  
SOIC-8  
QT113-ISG  
-40 - 85C  
QT1 + FG or QT113-IG  
Lead-Free  
lQ  
11  
R1.05/0405  
lQ  
Copyright © 2001-2004 QRG Ltd. All rights reserved  
Patented and patents pending worldwide  
Corporate Headquarters  
1 Mitchell Point  
Ensign Way, Hamble SO31 4RF  
Great Britain  
Tel: +44 (0)23 8056 5600 Fax: +44 (0)23 80565600  
www.qprox.com  
North America  
651 Holiday Drive Bldg. 5 / 300  
Pittsburgh, PA 15220 USA  
Tel: 412-391-7367 Fax: 412-291-1015  
This device covered under one or more of the following United States and international patents: 5,730,165, 6,288,707, 6,377,009, 6,452,514,  
6,457,355, 6,466,036, 6,535,200. Numerous further patents are pending which may apply to this device or the applications thereof.  
The specifications set out in this document are subject to change without notice. All products sold and services supplied by QRG are subject  
to our Terms and Conditions of sale and supply of services which are available online at www.qprox.com and are supplied with every order  
acknowledgement. QProx, QTouch, QMatrix, QLevel, and QSlide are trademarks of QRG. QRG products are not suitable for medical  
(including lifesaving equipment), safety or mission critical applications or other similar purposes. Except as expressly set out in QRG's Terms  
and Conditions, no licenses to patents or other intellectual property of QRG (express or implied) are granted by QRG in connection with the  
sale of QRG products or provision of QRG services. QRG will not be liable for customer product design and customers are entirely  
responsible for their products and applications which incorporate QRG's products.  
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