IXDP 20N60 B
IXDP 20N60 BD1 IC25
VCES
= 600 V
= 32 A
High Voltage IGBT
with optional Diode
VCE(sat) typ = 2.2 V
High Speed,
Low Saturation Voltage
C
E
C
E
TO-220 AB
G
G
G
C
E
C (TAB)
G = Gate,
C = Collector ,
E = Emitter
TAB = Collector
IXDP 20N60B IXDP 20N60B D1
Symbol
Conditions
Maximum Ratings
Features
●
NPT IGBT technology
low switching losses
low tail current
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
●
●
●
●
●
TJ = 25°C to 150°C; RGE = 20 kW
no latch up
VGES
VGEM
Continuous
Transient
±20
±30
V
V
short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
IC25
IC90
ICM
TC = 25°C
32
20
40
A
A
A
●
●
●
TC = 90°C
TC = 90°C, tp =1 ms
RBSOA
VGE= ±15 V, TJ = 125°C, RG = 22 W
ICM = 60
A
Clamped inductive load, L = 30 µH
VCEK < VCES
Advantages
tSC
(SCSOA)
VGE= ±15 V, VCE = 600 V, TJ = 125°C
RG = 22 W, non repetitive
10
µs
●
Space savings
High power density
●
PC
TC = 25°C
IGBT
Diode
140
50
W
W
Typical Applications
TJ
-55 ... +150
-55 ... +150
300
°C
°C
°C
●
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Tstg
●
●
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
●
●
Switch-mode and resonant-mode
Md
Mounting torque
0.4 - 0.6
2
Nm
g
power supplies
Weight
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V(BR)CES
VGE(th)
ICES
VGE = 0 V
600
3
V
V
IC = 0.4 mA, VCE = VGE
VCE = VCES
5
TJ = 25°C
TJ = 125°C
0.1 mA
mA
0.7
2.2
IGES
VCE = 0 V, VGE = ± 20 V
IC = 20 A, VGE = 15 V
± 500 nA
VCE(sat)
2.8
V
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