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IXSX80N60B

型号:

IXSX80N60B

描述:

大电流IGBT短路SOA能力[ High Current IGBT Short Circuit SOA Capability ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

47 K

IXSK 80N60B  
IXSX 80N60B  
VCES = 600 V  
IC25 = 160 A  
VCE(sat) = 2.5 V  
High Current IGBT  
Short Circuit SOA Capability  
Symbol  
TestConditions  
Maximum Ratings  
PLUS247TM  
(IXSX)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
600  
600  
V
V
VCES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
G
C
E
TO-264 AA  
(IXSK)  
IC25  
IC90  
IL(RMS)  
ICM  
TC = 25°C  
TC = 90°C  
TC = 90°C  
TC = 25°C, 1 ms  
(silicon chip capability)  
(silicon chip capability)  
(silicon chip capability)  
160  
80  
75  
A
A
A
A
300  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 5 Ω  
Clamped inductive load  
ICM = 160  
@ 0.8 VCES  
A
G
(TAB)  
C
tsc  
SCSOA  
VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C  
RG = 5 Ω, non-repetitive  
10  
µs  
G = Gate  
C = Collector  
E = Emitter  
TAB = Collector  
PC  
TC = 25°C  
500  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
! International standard packages  
! Very high current, fast switching IGBT  
! Low VCE(sat)  
- for minimum on-state conduction  
losses  
! MOS Gate turn-on  
- drive simplicity  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Md  
Mountingtorque  
TO-264  
0.4/6 Nm/lb.in.  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Applications  
!
AC motor speed control  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
!
DC servo and robot drives  
!
min. typ. max.  
DC choppers  
!
BVCES  
VGE(th)  
IC = 500 µA, VGE = 0 V  
600  
4
V
V
Uninterruptible power supplies (UPS)  
!
Switch-mode and resonant-mode  
IC = 8 mA, VCE = VGE  
8
power supplies  
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
2
µA  
mA  
Advantages  
PLUS 247TM package for clip or spring  
!
mounting  
IGES  
VCE = 0 V, VGE = ±20 V  
±200  
nA  
V
!
Space savings  
VCE(sat)  
IC = IC90, VGE = 15 V  
2.5  
!
High power density  
98721B (07/02)  
© 2002 IXYS All rights reserved  
IXSK 80N60B  
IXSX 80N60B  
PLUS247TM Outline  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
gfs  
IC = 60 A; VCE = 10 V,  
52  
S
Pulse test, t 300 µs, duty cycle 2 %  
Cies  
Coes  
Cres  
6600  
660  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
196  
Qg  
240  
85  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Terminals: 1 - Gate  
2 - Drain (Collector)  
90  
3-Source(Emitter)  
4 - Drain (Collector)  
td(on)  
tri  
td(off)  
tfi  
60  
45  
ns  
ns  
Inductive load, TJ = 25°C  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
IC = IC90, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 2.7 Ω  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
140  
180  
4.2  
280 ns  
280 ns  
7.0 mJ  
Remarks: Switching times  
may increase for  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
Eoff  
VCE (Clamp) > 0.8 • VCES,  
higher TJ or increased RG  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
td(on)  
tri  
60  
60  
ns  
ns  
Inductive load, TJ =125°C  
e
L
L1  
5.45 BSC  
19.81 20.32  
3.81  
.215 BSC  
.780 .800  
.150 .170  
IC = IC90, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 2.7 Ω  
Eon  
td(off)  
tfi  
4.8  
190  
260  
6.7  
mJ  
ns  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
Remarks: Switching times  
may increase for  
ns  
TO-264 AA Outline  
VCE (Clamp) > 0.8 • VCES  
,
Eoff  
mJ  
higher TJ or increased RG  
RthJC  
RthCK  
0.26 K/W  
K/W  
0.15  
Millimeter  
Dim.  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
D
E
e
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
5.46BSC  
.215BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
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