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NX7460LE

型号:

NX7460LE

描述:

1 480 nm的掺铒光纤放大器应用的InGaAsP应变MQW DC- PBH激光二极管模块[ 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

63 K

DATA SHEET  
LASER DIODE  
NX7460LE  
1 480 nm EDFA APPLICATION  
InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE  
DESCRIPTION  
The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical  
Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple  
Quantum Well (st-MQW) DC-PBH laser diode that features high output power, high efficiency, and stable  
fundamental mode.  
FEATURES  
InGaAsP strained MQW DC-PBH laser diode  
High output power  
Pf = 120 mW MIN. @ IF = 550 mA CW  
Internal optical isolator, thermoelectric cooler and InGaAs monitor photo diode  
Hermetically sealed 14-pin butterfly package  
Single mode fiber pigtail  
Wide operating temperature range  
TC = 0 to +65 °C  
PACKAGE DIMENSIONS  
15.24  
2.54  
in millimeters  
TOP VIEW  
4– 2.67  
φ
#7  
#8  
#1  
22.3  
Case  
7
8
1
PD  
LD  
14  
#14  
0.5  
PIN CONNECTIONS  
20.83±0.13  
26.04±0.13  
Pin No.  
Function  
Pin No.  
Function  
1
2
3
4
5
6
7
Cooler Anode  
Thermistor  
PD Anode  
PD Cathode  
Case Ground  
NC  
8
9
10  
NC  
NC  
Optical Fiber (SMF)  
Length: 1 m MIN.  
LD Anode,  
Case Ground  
LD Cathode  
NC  
Case Ground  
Cooler Cathod  
11  
12  
13  
14  
NC  
29.97±0.25  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P14127EJ2V0DS00 (2nd edition)  
Date Published September 1999 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1999  
©
NX7460LE  
ORDERING INFORMATION  
Part Number  
NX7460LE  
Available Connector  
Without Connector  
NX7460LE-BA  
NX7460LE-CA  
With FC-PC Connector  
With SC-PC Connector  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified)  
Parameter  
Forward Current of LD  
Symbol  
IF  
Ratings  
700  
Unit  
mA  
V
Reverse Voltage of LD  
Forward Current of PD  
Reverse Voltage of PD  
Operating Case Temperature  
Storage Temperature  
VR  
2.0  
IF  
10  
mA  
V
VR  
20  
TC  
–20 to +65  
–40 to +85  
260  
°C  
°C  
°C  
Tstg  
Tsld  
Lead Soldering Temperature (10 s)  
ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25 °C, TC = 0 to +65 °C)  
Parameter  
Threshold Current  
Symbol  
Conditions  
MIN.  
TYP.  
25  
MAX.  
Unit  
mA  
V
Ith  
VF  
Pf  
λC  
σ
CW  
35  
Forward Voltage  
IF = 550 mA  
IF = 550 mA  
2.2  
2.7  
Optical Output Power from Fiber  
Center Wavelength  
Spectrum Width  
120  
140  
1 480  
4.0  
mW  
nm  
nm  
dB  
IF = 550 mA, RMS (–20 dB)  
IF = 550 mA, RMS (–20 dB)  
1 470 nm to 1 490 nm  
1 470  
1 490  
8.0  
Isolation  
IS  
20  
2
Data Sheet P14127EJ2V0DS00  
NX7460LE  
ELECTRO-OPTICAL CHARACTERISTICS  
(Applicable to Monitor PD: TLD = 25 °C, TC = 0 to +65 °C)  
Parameter  
Monitor Current  
Symbol  
Conditions  
MIN.  
500  
TYP.  
1 000  
2.0  
MAX.  
Unit  
µA  
Im  
ID  
VR = 5 V, IF = 550 mA  
1 500  
10  
Monitor Dark Current  
Tracking Error  
VR = 5 V  
nA  
γ*1  
m
I
= const.  
0.5  
dB  
Pf  
120 mW  
*1 γ = 10 log  
Pf  
(mW)  
T
LD = T = 25 ˚C  
C
X
T
T
LD = 25 ˚C  
= 0 to +65 ˚C  
C
P
f
I
m
0
I
m
(@P (25 ˚C) = 120 mW)  
f
ELECTRO-OPTICAL CHARACTERISTICS  
(Applicable to Thermistor and TEC: TLD = 25 °C, TC = 0 to +65 °C)  
Parameter  
Thermistor Resistance  
B Constant  
Symbol  
Conditions  
MIN.  
9.5  
TYP.  
10.0  
3 400  
1.0  
MAX.  
10.5  
3 500  
1.25  
4.3  
Unit  
kΩ  
K
R
B
TLD = 25 °C  
3 300  
Cooler Current  
IC  
T = 40 K  
T = 40 K  
C
A
Cooler Voltage  
VC  
T*1  
3.5  
V
Cooling Capacity  
I = 1.25 A, I = 660 mA  
F
40  
K
*1 T = TC – TLD  
3
Data Sheet P14127EJ2V0DS00  
NX7460LE  
TYPICAL CHARACTERISTICS (TC = 25 °C)  
OPTICAL OUTPUT POWER FROM FIBER vs.  
FORWARD CURRENT  
LONGITUDINAL MODE  
150  
100  
50  
0
300  
600  
1 430  
1 480  
1 530  
Forward Current I  
F
(mA)  
Wavelength λ (nm)  
Remark The graphs indicate nominal characteristics.  
4
Data Sheet P14127EJ2V0DS00  
NX7460LE  
LD FAMILY FOR DENSE WDM APPLICATION  
Absolute Maximum Ratings  
Typical Characteristics  
λC  
(nm)  
TC  
(°C)  
Tstg  
(°C)  
Ith  
(mA)  
Pf  
(mW)  
Part Number  
Description  
Package  
TYP.  
40  
MIN.  
90  
TYP.  
NDL7540PA  
20 to +65  
40 to +85  
40 to +85  
1 480  
1 480 nm pump LD  
module  
BFY  
NX7460LE  
0 to +65  
25  
120  
1 480  
1 480 nm pump LD  
module  
BFY  
NX8501 Series  
NX8561JD*1  
NX7660JC*1  
NDL7910P  
0 to +65  
0 to +65  
40 to +85  
40 to +85  
40 to +85  
40 to +85  
20  
20  
15  
7
2
3
1 510  
1 510  
1 625  
1 550*2  
Telemetry  
Telemetry  
Telemetry  
Coaxial  
DIP  
20 to +65  
20 to +70  
5
DIP  
0.5  
2.5 G EA modulator  
integrated module  
BFY  
1 550*2  
ITU-T*3  
NX8562LB  
NX8563LB  
20 to +65  
20 to +65  
40 to +85  
40 to +85  
20  
20  
20  
10  
1 550 CW LD module BFY  
1 550 CW LD module BFY  
*1 Under development  
*2 Wavelength selectable for ITU-T standards upon request  
*3 Wavelength selectable for ITU-T standards  
5
Data Sheet P14127EJ2V0DS00  
NX7460LE  
REFERENCE  
Document Name  
Document No.  
NEC semiconductor device reliability/quality control system  
Quality grades on NEC semiconductor devices  
C11159E  
C11531E  
C10535E  
X13769X  
Semiconductor device mounting technology manual  
SEMICONDUCTOR SELECTION GUIDE Products & Packages (CD-ROM)  
6
Data Sheet P14127EJ2V0DS00  
NX7460LE  
CAUTION  
Within this device there exists GaAs (Gallium Arsenide) material which is a  
harmful substance if ingested. Please do not under any circumstances break the  
hermetic seal.  
NEC Corporation  
NEC Building, 7-1, Shiba 5-chome,  
SEMICONDUCTOR LASER  
Minato-ku, Tokyo 108-01, Japan  
DANGER  
INVISIBLE LASER RADIATION  
AVOID DIRECT EXPOSURE TO BEAM  
Type number:  
Manufactured:  
Serial Number:  
This product conforms to FDA  
AVOID EXPOSURE-Invisible  
OUTPUT POWER  
WAVELENGTH  
mW MAX  
nm  
regulations as applicable  
to standards 21 CFR Chapter 1.  
Subchapter J.  
Laser Radiation is emitted from  
this aperture  
CLASS lllb LASER PRODUCT  
7
Data Sheet P14127EJ2V0DS00  
NX7460LE  
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from  
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales  
representative.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  
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