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CZT2000

型号:

CZT2000

描述:

NPN硅极高的电压达林顿晶体管[ NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR ]

品牌:

CENTRAL[ CENTRAL SEMICONDUCTOR CORP ]

页数:

2 页

PDF大小:

95 K

TM  
CZT2000  
Ce n t r a l  
S e m ic o n d u c t o r Co r p .  
NPN SILICON  
EXTREMELY HIGH VOLTAGE  
DARLINGTON TRANSISTOR  
DESCRIPTION:  
TheCENTRALSEMICONDUCTORCZT2000  
type is an NPN Epitaxial Planar Silicon  
Darlington Transistor manufactured in an  
epoxy molded surface mount package,  
designed for applications requiring extremely  
high voltages and high gain capability.  
SOT-223 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
200  
200  
10  
600  
2.0  
V
V
V
mA  
W
CBO  
CES  
EBO  
I
P
C
Power Dissipation  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
o
T ,T  
-65 to +150  
62.5  
C
C/W  
J stg  
Θ
JA  
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
500  
100  
UNITS  
I
I
V
V
=180V  
=10V  
nA  
nA  
V
V
V
CBO  
EBO  
CES  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
CB  
BE  
BV  
V
V
V
V
h
h
h
I =1.0mA  
200  
C
I =20mA, I =25µA  
0.9  
1.1  
1.2  
2.0  
C
B
B
B
C
I =80mA, I =40µA  
C
I =160mA, I =100µA  
V
V
C
V
=5.0V, I =160mA  
CE  
CE  
CE  
CE  
V
V
V
=5.0V, I =100µA  
3,000  
3,000  
3,000  
C
=5.0V, I =10mA  
FE  
C
=5.0V, I =160mA  
C
FE  
298  
All dimensions in inches (mm).  
LEAD CODE:  
1) BASE  
2) COLLECTOR  
3) EMITTER  
4) COLLECTOR  
R2  
299  
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