TM
Ce n t r a l
NEW
CZT31C NPN
CZT32C PNP
S e m ic o n d u c t o r Co r p .
2.0W COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT31C
and CZT32C types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designedforsurfacemountedpoweramplifier
applications up to 3.0 amps.
POWER TM
223
SOT-223 CASE
o
MAXIMUM RATINGS: (T =25 C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
I
100
100
5.0
3.0
6.0
1.0
2.0
V
V
CBO
CEO
EBO
V
A
C
Peak Collector Current
Base Current
I
A
CM
I
A
B
Power Dissipation
P
W
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
T ,T
J stg
-65 to +150
62.5
C
o
Θ
C/W
JA
o
ELECTRICAL CHARACTERISTICS: (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
200
300
1.0
UNITS
µA
µA
mA
V
I
V
V
V
=100V
=60V
CES
CE
CE
EB
I
CEO
I
=5.0V
EBO
BV
I =30mA
100
CEO
C
* V
I =3.0A, I =375mA
1.2
1.8
V
CE(SAT)
C
B
* V
* h
V
=4.0V, I =3.0A
V
BE(ON)
CE
CE
CE
CE
C
V
V
V
=4.0V, I =1.0A
C
25
10
FE
FE
* h
=4.0V, I =3.0A
100
C
f
=10V, I =500mA, f=1.0MHz
C
3.0
MHz
T
* Pulsed, 2%D.C.
294
