TM
Ce n t r a l
CZT5401
S e m ic o n d u c t o r Co r p .
PNP SILICON TRANSISTOR
DESCRIPTION:
TheCENTRALSEMICONDUCTORCZT5401
typeisanPNPsilicontransistormanufactured
by the epitaxial planar process, epoxy molded
inasurfacemountpackage, designedforhigh
voltage amplifier applications.
SOT-223 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
160
150
5.0
600
2.0
V
V
V
mA
W
CBO
CEO
EBO
I
P
C
Power Dissipation
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
o
T ,T
-65 to +150
62.5
C
C/W
J stg
Θ
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
50
50
UNITS
nA
mA
nA
V
I
I
I
V
V
V
=100V
=100V, T =150 C
=3.0V
CBO
CBO
EBO
CBO
CEO
EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
CB
CB
EB
o
A
50
BV
BV
BV
V
V
V
V
h
I =100µA
160
150
5.0
C
I =1.0mA
V
V
V
V
V
V
C
I =10µA
E
I =10mA, I =1.0mA
0.2
0.5
1.0
1.0
C
B
B
B
B
I =50mA, I =5.0mA
C
I =10mA, I =1.0mA
C
I =50mA, I =5.0mA
C
V
=5.0V, I =1.0mA
50
60
50
CE
CE
CE
C
h
h
V
V
=5.0V, I =10mA
C
240
FE
=5.0V, I =50mA
FE
C
314
