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ZXTP2029F

型号：

ZXTP2029F

描述：

100V ， SOT23 ， PNP中等功率晶体管[ 100V, SOT23, PNP medium power transistor ]

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

6 页

PDF大小：

540 K

下载PDF手册
ZXTP2029F  
100V, SOT23, PNP medium power transistor  
Summary  
V
> -130V, V  
> -100V  
(BR)CEO  
(BR)CEV  
I
= -3A  
C(cont)  
R
= 45m⍀ typical  
CE(sat)  
V
< -80mV @ -1A  
CE(sat)  
P = 1.2W  
D
Complementary part number: ZXTN2020F  
Description  
Advanced process capability and package design have been used to  
maximize the power handling and performance of this small outline  
transistor. The compact size and ratings of this device make it ideally suited  
to applications where space is at a premium.  
Features  
•
•
•
•
Higher power dissipation SOT23 package  
High peak current  
Low saturation voltage  
130V forward blocking voltage  
Applications  
•
•
•
•
MOSFET and IGBT gate driving  
Motor drive  
DC-DC converters  
High side switches  
Pinout - top view  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
Quantity per reel  
ZXTP2029FTA  
7
8mm  
3,000  
Device marking  
953  
Issue 2 - September 2005  
© Zetex Semiconductors plc 2005  
1
www.zetex.com  
ZXTP2029F  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
V
V
V
-130  
-130  
-100  
-7.0  
-5  
V
CBO  
Collector-emitter voltage  
Collector-emitter voltage  
Emitter-base voltage  
Peak pulse current  
V
V
(BR)CEV  
CEO  
V
EBO  
I
I
I
A
A
A
W
CM  
(a)  
-3  
C
B
Continuous collector current  
Base current  
-1  
o
(a)  
(b)  
(c)  
P
P
P
1.0  
8.0  
Power dissipation @ T =25 C  
Linear derating factor  
D
D
D
A
o
mW/ C  
o
1.2  
9.6  
W
Power dissipation @ T =25 C  
Linear derating factor  
A
o
mW/ C  
o
1.56  
12.5  
W
Power dissipation @ T =25 C  
Linear derating factor  
A
o
mW/ C  
o
Operating and storage temperature  
T :T  
-55 to +150  
j
stg  
C
Thermal resistance  
Parameter  
Symbol  
Value  
Unit  
(a)  
o
Rθ  
125  
JA  
Junction to ambient  
C/W  
(b)  
o
Rθ  
104  
80  
JA  
Junction to ambient  
C/W  
(c)  
o
Rθ  
JA  
Junction to ambient  
C/W  
NOTES:  
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.  
(b)Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.  
(c) As (b) above measured at t<5secs.  
Issue 2 - September 2005  
© Zetex Semiconductors plc 2005  
2
www.zetex.com  
ZXTP2029F  
Characteristics  
Issue 2 - September 2005  
© Zetex Semiconductors plc 2005  
3
www.zetex.com  
ZXTP2029F  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol  
Min. Typ. Max. Unit Conditions  
Collector-base breakdown  
voltage  
V
V
V
V
-130 -160  
-130 -160  
-100 -120  
V
I =-100µA  
C
(BR)CBO  
(BR)CEV  
(BR)CEO  
(BR)EBO  
Collector-emitter breakdown  
voltage  
V
I =−1µA, 1V> V >-0.3V  
C BE  
(a)  
Collector-emitter breakdown  
voltage  
V
I =-10mA  
C
Emitter-base breakdown  
voltage  
-7.0  
-8.3  
V
I =-100µA  
E
Collector-emitter cut-off  
current  
I
-20  
nA  
V
V
=-100V,  
CEV  
CE  
BE  
= 1V  
=-100V  
=-6V  
Collector-base cut-off current I  
-20  
-10  
nA  
nA  
V
V
CBO  
CB  
EB  
Emitter-base cut-off current  
I
EBO  
(a)  
Static forward current  
transfer ratio  
H
100  
100  
40  
220  
200  
75  
FE  
I =-10mA, V =-2V  
C
CE  
(a)  
300  
I =-1A, V =-2V  
C
CE  
Ic=-3A, V =-2V  
CE  
(a)  
Collector-emitter saturation  
voltage  
V
-20  
-60  
-30  
-80  
mV  
mV  
mV  
mV  
CE(sat)  
I =-100mA, I =-10mA  
C B  
(a)  
(a)  
(a)  
I =-1A, I =-100mA  
C
B
-135 -180  
-180 -250  
I =-3A, I =-300mA  
C
B
I =-4A, I =-400mA  
C
B
(a)  
Base-emitter saturation  
voltage  
V
V
-0.90 -1.00  
V
BE(sat)  
BE(on)  
I =-3A, I =-300mA  
C
B
(a)  
Base-emitter turn-on voltage  
-0.81 -0.90  
150  
V
I =-3A, V =-2V  
C
CE  
Transition frequency  
f
MHz Ic=-100mA, V =-10V,  
T
CE  
f=50MHz  
Output capacitance  
Turn–on time  
C
39  
33  
pF  
ns  
ns  
V
V
=-10V, f=1MHz  
obo  
(on)  
(off)  
CB  
CC  
t
t
=-10V, I =-1A,  
C
Turn-off time  
344  
I =I =-100mA  
B1 B2  
NOTES:  
(a) Measured under pulsed conditions. Pulse width=300␮S. Duty cycle Յ2%.  
Issue 2 - September 2005  
© Zetex Semiconductors plc 2005  
4
www.zetex.com  
ZXTP2029F  
Typical characteristics  
Issue 2 - September 2005  
© Zetex Semiconductors plc 2005  
5
www.zetex.com  
ZXTP2029F  
Packaging details - SOT23  
L
H
G
N
D
3 leads  
A
M
B
C
K
F
Dim.  
Millimeters  
Inches  
Dim.  
Millimeters  
Inches  
Min.  
2.67  
1.20  
-
Max.  
3.05  
1.40  
1.10  
0.53  
0.15  
Min.  
0.105  
0.047  
-
Max.  
0.120  
0.055  
0.043  
0.021  
0.0059  
Min.  
Max.  
0.51  
0.10  
2.50  
0.64  
Max.  
0.013  
0.0004  
0.083  
0.018  
Max.  
0.020  
0.004  
0.0985  
0.025  
A
B
C
D
F
H
K
L
0.33  
0.01  
2.10  
0.45  
0.37  
0.085  
0.015  
0.0034  
M
N
-
0.95 NOM  
0.0375 NOM  
G
1.90 NOM  
0.075 NOM  
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
Streitfeldstraße 19  
D-81673 München  
Germany  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.  
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
Issue 2 - September 2005  
© Zetex Semiconductors plc 2005  
6
www.zetex.com  
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