HiPerFETTM
Power MOSFETs
IXFH7N80 VDSS = 800 V
IXFM 7 N80 ID (cont) = 7 A
RDS(on) = 1.4 W
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
trr
= 250 ns
Symbol
TestConditions
MaximumRatings
TO-247 AD (IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
TJ = 25°C to 150°C; RGS = 1 MW
(TAB)
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
IDM
IAR
TC = 25°C
7
28
7
A
A
A
TO-204 AA (IXFM)
TC = 25°C, pulse width limited by TJM
TC = 25°C
EAR
TC = 25°C
18
5
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
G
D
PD
TC = 25°C
180
W
G = Gate,
D = Drain,
S = Source,
TAB = Drain
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
• Internationalstandardpackages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
Md
1.13/10
Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronousrectification
• Battery chargers
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• Switched-modeandresonant-mode
powersupplies
• DC choppers
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 2.5 mA
800
2
V
V
VGS(th)
4.5
• AC motor control
• Temperatureandlightingcontrols
• Low voltage relays
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
250 mA
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
1
mA
• Easy to mount with 1 screw (TO-247)
(isolatedmountingscrewhole)
• Space savings
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.4
W
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91527F(7/97)
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