请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFV74N20P

型号：

IXFV74N20P

描述：

PolarHT HiPerFET功率MOSFET[ PolarHT HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

696 K

下载PDF手册
PolarHTTMHiPerFET  
Power MOSFET  
IXFH 74N20P  
IXFV 74N20P  
IXFV 74N20PS  
VDSS = 200  
V
A
ID25  
RDS(on)  
trr  
=
=
74  
34 mΩ  
N-Channel Enhancement Mode  
Fast Recovery Diode, Avalanche  
Rated  
≤ 200 ns  
PreliminaryDataSheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 (IXFH)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
200  
200  
V
V
TJ = 25°C to 175°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25°C  
74  
A
A
G
D (TAB)  
D
S
TC = 25°C, pulse width limited by TJM  
200  
IAR  
TC = 25°C  
60  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
40  
mJ  
J
PLUS220 (IXFV)  
1.0  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
G
D (TAB)  
D
S
TC = 25°C  
480  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
PLUS220SMD (IXFV-PS)  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
250  
°C  
°C  
FC  
Mounting Force  
Mounting torque  
(PLUS220)  
(TO-247)  
1.13/10 Nm/lb.in.  
1.13/10 Nm/lb.in.  
G
S
D (TAB)  
Md  
G = Gate  
D = Drain  
TAB = Drain  
Weight  
TO-247  
PLUS220  
6.0  
4.0  
g
g
S = Source  
Features  
Symbol  
TestConditions  
Characteristic Values  
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
z
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
200  
V
V
Low package inductance  
- easy to drive and to protect  
2.5  
5.0  
100  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125°C  
z
Easy to mount  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
34 mΩ  
z
High power density  
DS99209(09/04)  
© 2004 IXYS All rights reserved  
IXFH 74N20P IXFV 74N20P  
IXFV 74N20PS  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-247 (IXFH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
30  
44  
S
Ciss  
Coss  
Crss  
3300  
800  
pF  
pF  
pF  
1
2
3
190  
td(on)  
tr  
td(off)  
tf  
23  
21  
60  
21  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 4 Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
Dim.  
Millimeter  
Min. Max.  
Inches  
Qg(on)  
Qgs  
107  
24  
nC  
nC  
nC  
Min. Max.  
A
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
.040 .055  
.065 .084  
.113 .123  
.016 .031  
.819 .845  
.610 .640  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
(TO-247, PLUS220)  
A
A12  
Qgd  
52  
b
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
RthJC  
RthCK  
0.31 K/W  
K/W  
b
b12  
0.21  
C
D
E
.4  
.8  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
Source-Drain Diode  
Characteristic Values  
L
19.81 20.32  
4.50  
.780 .800  
.177  
(TJ = 25°C, unless otherwise specified)  
L1  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
∅P 3.55  
Q
R
S
3.65  
.140 .144  
5.89  
4.32  
6.15 BSC  
6.40 0.232 0.252  
VGS = 0 V  
74  
A
A
V
5.49  
.170 .216  
242 BSC  
ISM  
Repetitive  
180  
1.5  
PLUS220 (IXFV) Outline  
VSD  
IF = IS, VGS = 0 V,  
E
A
E1  
L2  
E1  
A1  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25 A, -di/dt = 100 A/µs  
120  
0.4  
6
200 ns  
D1  
D
QRM  
IRM  
VR = 100 V  
µC  
L3  
A
L1  
L
PLUS220SMD (IXFV-PS) Outline  
A
E
E1  
L2  
A1  
E1  
c
3X b  
A2  
2X e  
Terminals: 1-Gate 2-Drain  
D
A
A3  
L4  
L3  
A1  
A2  
A3  
b
A
L
A1  
A2  
b
L1  
2X b  
c
c
D
e
A2  
c
D1  
E
D
D1  
E
E1  
e
E1  
e
L
Terminals: 1-Gate 2-Drain  
L1  
L2  
L3  
L4  
L
L1  
L2  
L3  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
IXFH 74N20P IXFV 74N20P  
IXFV 74N20PS  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25  
º
@ 25 C  
ºC  
200  
180  
160  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
GS  
= 10V  
9V  
V
GS  
= 10V  
9V  
8V  
8V  
7V  
7V  
6V  
5V  
60  
6V  
5V  
40  
20  
0
0
2
4
6
8
10 12 14 16 18 20  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 150  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
C
80  
70  
60  
50  
40  
30  
20  
10  
0
3
2.6  
2.2  
1.8  
1.4  
1
V
= 10V  
9V  
GS  
V
GS  
= 10V  
8V  
7V  
6V  
I
= 74A  
D
I
= 37A  
D
5V  
0.6  
1
2
3
4
5
6
7
-50 -25  
0
25  
50  
75 100 125 150 175  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
5
4.5  
4
V
= 10V  
GS  
T = 175ºC  
J
3.5  
3
2.5  
2
V
= 10V  
GS  
V
= 15V  
GS  
1.5  
1
T = 25ºC  
J
0.5  
-50 -25  
0
25  
50  
75 100 125 150 175  
20 40 60 80 100 120 140 160 180 200  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXFH 74N20P IXFV 74N20P  
IXFV 74N20PS  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T = -40ºC  
J
25ºC  
150ºC  
T = 150ºC  
J
25ºC  
-40ºC  
3.5  
0.4  
0
4
4.5  
5
5.5  
6
6.5  
7
0
20  
40  
60  
80  
100  
120  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
200  
180  
160  
140  
120  
100  
80  
9
8
7
6
5
4
3
2
1
0
V
I
= 100V  
DS  
= 37A  
D
I
= 10mA  
G
T = 150ºC  
J
60  
40  
T = 25ºC  
J
20  
0
0
10 20 30 40 50 60 70 80 90 100 110  
0.6  
0.8  
1
1.2  
1.4  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
1000  
100  
10  
f = 1MHz  
T = 175ºC  
J
C
C
iss  
R
Limit  
T
C
= 25ºC  
DS(on)  
25µs  
100µs  
1ms  
oss  
10ms  
DC  
C
rss  
1
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
VD S - Volts  
1000  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFH 74N20P IXFV 74N20P  
IXFV 74N20PS  
Fig. 13. M axim um Trans ie nt The rm al Re s is tance  
1.00  
0.10  
0.01  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.259253s