IXFA 3N120
IXFP 3N120
TO-220(IXFP)Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 20 V; ID = 0.5 • ID25, pulse test
1.5
2.5
S
Ciss
Coss
Crss
1050
100
25
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
17
15
32
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7 Ω (External),
Pins: 1 - Gate
3 - Source
2 - Drain
Qg(on)
Qgs
Qgd
39
9
22
nC
nC
nC
4 - Drain
Bottom Side
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCK
0.62
K/W
K/W
(TO-220)
0.25
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
3
12
A
ISM
Repetitive; pulse width limited by TJM
A
V
TO-263(IXFA)Outline
VSD
IF = I , VGS = 0 V,
1.5
PulsSe test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
QRM
IRM
300
ns
µC
A
IF = IS, -di/dt = 100 A/µs, VR = 100 V
0.4
1.2
1. Gate
2. Drain
3. Source
4. Drain
BottomSide
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
oneormoreofthefollowingU.S.patents:
