HiPerFETTM
Power MOSFETs
Q-Class
IXFA 4N100Q VDSS
IXFP 4N100Q ID25
=1000 V
4 A
=
RDS(on) = 3.0 W
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Preliminary Data Sheet
Symbol
TestConditions
MaximumRatings
TO-220 (IXFP)
VDSS
VDGR
TJ = 25°C to 150°C
1000
1000
V
V
TJ = 25°C to 150°C; RGS = 1 MW
D (TAB)
VGS
Continuous
Transient
±20
±30
V
V
G
D
S
VGSM
ID25
IDM
IAR
TC = 25°C
4
16
4
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
TO-263 (IXFA)
EAR
EAS
TC = 25°C
20
mJ
mJ
G
S
700
D (TAB)
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
G = Gate
D
= Drain
PD
TC = 25°C
150
W
S = Source
TAB = Drain
TJ
-55 to +150
150
°C
°C
°C
TJM
Tstg
-55 to +150
TL
1.6 mm (0.063 in) from case for 10 s
Mountingtorque(TO-220)
300
°C
Md
1.13/10 Nm/lb.in.
Features
Weight
TO-220
TO-263
4
2
g
g
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• Internationalstandardpackages
• Low RDS (on)
• Rated for unclamped Inductive load
Switching (UIS)
• Molding epoxies meet UL94V-0
flammabilityclassification
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 1.5 mA
1000
3.0
V
V
VGS(th)
5.0
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100
nA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50
1
mA
mA
Advantages
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
3.0
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98705(02/04/00)
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