PolarHVTM HiPerFET
Power MOSFET
IXFN 44N80P
VDSS = 800
ID25 = 39
RDS(on) ≤ 190 mΩ
trr ≤ 250 ns
V
A
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
800
800
V
V
S
G
VGS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
39
100
A
A
S
TC = 25°C, pulse width limited by TJM
D
D = Drain
G = Gate
S = Source
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
22
80
3.4
A
mJ
J
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 10 Ω
,
10
V/ns
Features
TC = 25°C
694
W
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
VISOL
50/60 Hz, RMS, 1 minute
IISOL < 1 mA, 10 seconds
2500
3000
V~
V~
Md
Mounting torque
Terminal torque
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in. • Low package inductance
• Fast intrinsic Rectifier
Weight
30
g
Applications
Symbol
Test Conditions
Characteristic Values
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 800 μA
VDS = VGS, ID = 8 mA
VGS = ± 30 V, VDS = 0 V
800
V
V
3.0
5.0
± ±200
50
nA
μA
• Temperature and lighting controls
• Low voltage relays
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
1.5 mA
Advantages
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 ITD25, Note 1
190 mΩ
DS99503E(06/06)
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