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IXFK180N10

型号：

IXFK180N10

描述：

单个MOSFET模[ Single MOSFET Die ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

112 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
IXFK 180N10  
IXFX 180N10  
VDSS = 100 V  
ID25  
RDS(on)  
= 180 A  
= 8 mW  
Single MOSFET Die  
trr £ 250 ns  
Preliminary data sheet  
PLUS247TM  
(IXFX)  
Symbol  
TestConditions  
MaximumRatings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
100  
100  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
D (TAB)  
G
D
ID25  
ID(RMS)  
IDM  
TC = 25°C (MOSFET chip capability)  
Externallead(currentlimit)  
TC = 25°C, Note 1  
180  
76  
720  
180  
A
A
A
A
TO-264 AA (IXFK)  
IAR  
TC = 25°C  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
3
mJ  
J
G
(TAB)  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
D
S
PD  
TJ  
TC = 25°C  
560  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
Features  
• Internationalstandardpackages  
• Low RDS (on) HDMOSTM process  
• Ruggedpolysilicongatecellstructure  
• UnclampedInductiveSwitching(UIS)  
rated  
• Lowpackageinductance  
- easy to drive and to protect  
• Fastintrinsicrectifier  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Md  
Mountingtorque  
TO-264  
0.9/6  
Nm/lb.in.  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Applications  
• DC-DC converters  
• Batterychargers  
• Switched-modeandresonant-mode  
powersupplies  
• DC choppers  
• ACmotorcontrol  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20 V, VDS = 0  
100  
2.0  
V
4.0 V  
• Temperatureandlightingcontrols  
±100nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 mA  
2 mA  
Advantages  
• PLUS 247TM package for clip or spring  
mounting  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
8 mW  
• Space savings  
• Highpowerdensity  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98552B(7/99)  
1 - 4  
IXFK 180N10  
IXFX 180N10  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS247TM (IXFX) Outline  
VDS = 10 V; ID = 60A  
Note 2  
60  
90  
S
Ciss  
Coss  
Crss  
9100  
3200  
1660  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
50  
90  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 W (External),  
140  
65  
Dim.  
Millimeter  
Min. Max. Min. Max.  
Inches  
Qg(on)  
Qgs  
360  
65  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Qgd  
190  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
RthJC  
RthCK  
0.22 K/W  
K/W  
0.15  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
L
L1  
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
Source-DrainDiode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 .244  
.170 .190  
Symbol  
TestConditions  
IS  
VGS = 0 V  
180  
720  
A
A
TO-264 AA (IXFK) Outline  
ISM  
Repetitive;  
pulse width limited by TJM  
VSD  
IF = 100A, VGS = 0 V, Note 1  
1.5  
V
trr  
250 ns  
IF = 50A,-di/dt = 100 A/ms, VR = 50 V  
QRM  
IRM  
1.1  
13  
mC  
A
Note: 1. Pulse width limited by TJM  
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
D
0.53  
25.91 26.16  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 4  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXFK 180N10  
IXFX 180N10  
Figure 2. Output Characteristics at 125OC  
Figure 1. Output Characteristics at 25OC  
200  
200  
150  
100  
50  
VGS=10V  
VGS=10V  
TJ=125OC  
TJ=25OC  
7V  
7V  
6V  
9V  
9V  
6V  
8V  
8V  
150  
100  
50  
5V  
5V  
0
0
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
VDS - Volts  
VDS - Volts  
Figure 3. RDS(on) normalized to 15A/25OC vs. ID  
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ  
1.8  
2.0  
1.8  
V
GS = 10V  
TJ = 125OC  
1.6  
1.4  
1.2  
1.0  
0.8  
ID=180A  
VGS=10V  
VGS=15V  
1.6  
1.4  
TJ = 25OC  
1.2  
ID=90A  
VGS=10V  
1.0  
V
GS=15V  
0.8  
25  
0
50  
100  
ID - Amperes  
150  
200  
50  
75  
100  
125  
150  
TJ - Degrees C  
Figure 5. Drain Current vs. Case Temperature  
Figure 6. Admittance Curves  
100  
100  
80  
60  
40  
20  
0
75  
Lead Current Limit  
50  
TJ = 125oC  
TJ = 25oC  
25  
0
-50 -25  
0
25 50 75 100 125 150  
2
4
6
8
TC - Degrees C  
VGS - Volts  
IXF 180N10
 
P1  
© 2000 IXYS All rights reserved  
3 - 4  
IXFK 180N10  
IXFX 180N10  
Figure 7. Gate Charge  
15  
Figure 8. Capacitance Curves  
Ciss  
10000  
VDS=50V  
ID=90A  
12  
9
F = 100kHz  
IG=10mA  
Coss  
6
3
Crss  
0
1000  
0
50 100 150 200 250 300 350 400  
0
5
10 15 20 25 30 35 40  
Gate Charge - nC  
VDS - Volts  
Figure 10. Forward Bias Safe Operating Area  
Figure 9. Forward Voltage Drop of the Intrinsic Diode  
200  
200  
100  
175  
VGS= 0V  
1 ms  
150  
125  
10 ms  
100  
10  
TJ=125OC  
75  
TC = 25OC  
DC  
TJ=25OC  
50  
25  
0
1
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
VDS - Volts  
VSD - Volts  
Figure 11. Transient Thermal Resistance  
0.40  
0.20  
Ri:  
0.02  
0.046  
0.154  
0.10  
0.08  
0.06  
ti:  
0.04  
0.007  
0.01  
0.25  
3
0.02  
0.01  
R(th)JC = SRi{1-exp(-t/ti)}  
i=1  
10-3  
10-2  
10-1  
Pulse Width - Seconds  
100  
101  
© 2000 IXYS All rights reserved  
4 - 4  
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