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IXFH120N20P

型号：

IXFH120N20P

描述：

PolarHT HiPerFET功率MOSFET[ PolarHT HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

601 K

下载PDF手册
Advanced Technical Information  
PolarHTTMHiPerFET  
Power MOSFET  
IXFH 120N20P  
IXFK 120N20P  
VDSS = 200 V  
ID25 = 120 A  
RDS(on) ≤ 22 mΩ  
N-Channel Enhancement Mode  
Avalanche Rated, Fast Intrinsic  
Diode  
trr  
≤ 140 ns  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 (IXFH)  
VDSS  
VDGR  
T
= 25°C to 175°C  
200  
200  
V
V
TJJ = 25°C to 175°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
20  
30  
V
V
VGSM  
D (TAB)  
G
S
D
ID25  
TC = 25°C  
120  
75  
A
A
A
ID(RMS)  
IDM  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
TO-264 (IXFK)  
300  
IAR  
TC = 25°C  
60  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
mJ  
J
G
D
S
(TAB)  
2.0  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 4 Ω  
,
10  
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25°C  
714  
W
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z
-55 ... +175  
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
z
z
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
Low package inductance  
- easy to drive and to protect  
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-247  
TO-264  
6
10  
g
g
Advantages  
z
Easy to mount  
Symbol  
TestConditions  
Characteristic Values  
z
Space savings  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
High power density  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
200  
V
V
2.5  
5.0  
100 nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25 µA  
500 µA  
TJ = 175°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
22 mΩ  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
© 2004 IXYS All rights reserved  
DS99223(10/04)  
IXFH 120N20P  
IXFK 120N20P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-247 (IXFH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
40  
63  
S
Ciss  
Coss  
Crss  
6000  
1300  
265  
pF  
pF  
pF  
1
2
3
td(on)  
tr  
td(off)  
tf  
30  
35  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
Terminals: 1 - Gate  
2 - Drain  
RG = 3.3 Ω (External)  
100  
31  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qg(on)  
Qgs  
152  
40  
nC  
nC  
nC  
A
A12  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
.040 .055  
.065 .084  
.113 .123  
.016 .031  
.819 .845  
.610 .640  
A
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
75  
b
b12  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
b
RthJC  
RthCK  
0.21 K/W  
C
D
E
.4  
.8  
TO-247  
TO-264  
0.21  
0.15  
K/W  
K/W  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
19.81 20.32  
4.50  
.780 .800  
.177  
.140 .144  
Source-Drain Diode  
Characteristic Values  
L1  
(TJ = 25°C, unless otherwise specified)  
∅P 3.55  
5.89  
3.65  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
Q
6.40 0.232 0.252  
VGS = 0 V  
120  
A
A
V
TO-264 (IXFK)  
ISM  
Repetitive  
300  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25 A, -di/dt = 100 A/µs  
100  
0.4  
6.0  
140 ns  
QRM  
IRM  
VR = 100 V  
µC  
A
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
0.53  
25.91  
19.81  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
0.83  
26.16  
19.96  
.190  
.202  
A1  
A2  
.100  
.079  
.114  
.083  
b
.044  
.094  
.114  
.021  
1.020  
.780  
.056  
.106  
.122  
.033  
1.030  
.786  
b1  
b2  
c
D
E
e
5.46BSC  
.215BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
20.32  
20.83  
.800  
.820  
L1  
2.29  
2.59  
.090  
.102  
P
3.17  
3.66  
.125  
.144  
Q
6.07  
6.27  
.239  
.247  
Q1  
8.38  
8.69  
.330  
.342  
R
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
R1  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
IXFH 120N20P  
IXFK 120N20P  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
ºC  
@ 25ºC  
120  
100  
80  
60  
40  
20  
0
270  
240  
210  
180  
150  
120  
90  
VGS = 10V  
V
= 10V  
GS  
9V  
8V  
9V  
8V  
7V  
7V  
60  
6V  
5V  
6V  
30  
0
0
0
0
0.5  
1
1.5  
2
2.5  
0
2
4
6
8
10  
12  
14  
16  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 150  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
C
120  
100  
80  
60  
40  
20  
0
VGS = 10V  
3
2.5  
2
VGS = 10V  
9V  
8V  
ID = 120A  
7V  
6V  
ID = 60A  
1.5  
1
5V  
4
0.5  
1
2
3
5
6
-50 -25  
0
25  
50  
75 100 125 150 175  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to 0.5 ID25  
Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Temperature  
4
3.5  
3
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
º
TJ = 175 C  
External Lead Current Limit  
2.5  
2
VGS = 10V  
V
= 15V  
GS  
1.5  
1
º
TJ = 25 C  
0.5  
-50 -25  
0
25  
50  
75 100 125 150 175  
30 60 90 120 150 180 210 240 270 300  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXFH 120N20P  
IXFK 120N20P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
180  
150  
120  
90  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
º
TJ = -40 C  
25ºC  
60  
150ºC  
º
TJ = 150 C  
25ºC  
30  
-40ºC  
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
0
30  
60  
90  
120  
150  
180  
210  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 100V  
D = 60A  
G = 10mA  
I
I
º
TJ = 150 C  
º
TJ = 25 C  
0
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100 120 140 160  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
f = 1MHz  
100,000  
10,000  
1,000  
100  
1000  
100  
10  
º
TJ = 175 C  
º
C = 25 C  
T
RDS(on) Limit  
C
iss  
25µs  
100µs  
1ms  
C
oss  
C
rss  
10ms  
DC  
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
VD S - Volts  
1000  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFH 120N20P  
IXFK 120N20P  
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n c e  
1 . 0 0  
0 . 1 0  
0 . 0 1  
1
1 0  
1 0 0  
1 0 0 0  
Pu ls e W id th - millis e c o n d s  
© 2004 IXYS All rights reserved  
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