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IXFH30N40Q

型号:

IXFH30N40Q

描述:

HiPerFET功率MOSFET Q系列[ HiPerFET Power MOSFETs Q-Class ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

107 K

HiPerFETTM  
Power MOSFETs  
Q-Class  
IXFH 30N40Q  
IXFT 30N40Q  
VDSS  
ID25  
RDS(on)  
= 400 V  
= 30 A  
= 0.16 W  
trr £ 250 ns  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, Highdv/dt  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
400  
400  
V
V
TJ = 25°C to 150°C; RGS = 1 MW  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
VGSM  
ID25  
IDM  
IAR  
TC = 25°C  
30  
120  
30  
A
A
A
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
TO-268 (D3) ( IXFT)  
EAR  
EAS  
TC = 25°C  
30  
mJ  
mJ  
1.5  
G
(TAB)  
S
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
5
V/ns  
G = Gate  
S = Source TAB = Drain  
D
= Drain  
PD  
TC = 25°C  
300  
W
TJ  
-55 to +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 to +150  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mounting torque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Features  
Weight  
TO-247  
TO-268  
6
4
g
g
l IXYS advanced low Qg process  
l Low gate charge and capacitances  
- easier to drive  
- faster switching  
l International standard packages  
l Low RDS (on)  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
l Rated for unclamped Inductive load  
switching (UIS) rated  
min.  
typ.  
max.  
VDSS  
VGS = 0 V, ID = 250 mA  
400  
2.0  
V
V
l Molding epoxies meet UL 94 V-0  
flammability classification  
VGS(th)  
VDS = VGS, ID = 4 mA  
4.0  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
Advantages  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25  
1
mA  
mA  
l
Easy to mount  
Space savings  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
0.16  
W
l
High power density  
© 2000 IXYS All rights reserved  
98754 (10/00)  
IXFH 30N40Q  
IXFT 30N40Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD (IXFH) Outline  
VDS = 20 V; ID = 0.5 • ID25, pulse test  
18  
25  
S
1
2
3
Ciss  
Coss  
Crss  
3300  
540  
pF  
pF  
pF  
Terminals:  
1 - Gate  
2 - Drain  
3 - Source  
Tab - Drain  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
150  
td(on)  
tr  
td(off)  
tf  
25  
35  
51  
12  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2.0 W (External),  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185  
.087  
.059  
.209  
.102  
.098  
Qg(on)  
Qgs  
95  
22  
44  
nC  
nC  
nC  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040  
.065  
.113  
.055  
.084  
.123  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
C
D
E
.4  
20.80  
15.75  
.8  
21.46  
16.26  
.016  
.819  
.610  
.031  
.845  
.640  
RthJC  
RthCK  
0.42 K/W  
K/W  
(TO-247)  
0.25  
e
L
L1  
5.20  
19.81  
5.72  
20.32  
4.50  
0.205  
.780  
0.225  
.800  
.177  
ÆP  
Q
3.55  
5.89  
3.65  
6.40  
.140  
0.232  
.144  
0.252  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
R
S
4.32  
6.15 BSC  
5.49  
.170  
242 BSC  
.216  
Symbol  
IS  
TestConditions  
TO-268 Outline  
VGS = 0 V  
30  
120  
1.5  
A
A
V
ISM  
Repetitive; pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
trr  
QRM  
IRM  
1.1  
10  
250 ns  
IF = IS, -di/dt = 100 A/ms, VR = 100 V  
mC  
A
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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