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IXFX24N90Q

型号:

IXFX24N90Q

描述:

HiPerFET功率MOSFET Q系列[ HiPerFET Power MOSFETs Q-CLASS ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

89 K

HiPerFETTM  
Power MOSFETs  
Q-CLASS  
IXFK 24N90Q  
IXFX 24N90Q  
VDSS  
ID25  
=
=
900 V  
24 A  
RDS(on) = 0.45 W  
Single MOSFET Die  
trr £ 250 ns  
N-ChannelEnhancementMode  
AvalancheRated, LowQg,  
High dV/dt, Low trr  
PLUS247TM
Preliminary data sheet  
(TAB)  
G
Symbol  
TestConditions  
Maximum Ratings  
D
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
900  
900  
V
V
TO-264AA(IXFK)  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
(TAB)  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
24  
96  
24  
A
A
A
S
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
2.5  
mJ  
J
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
Features  
l IXYS advanced low Qg process  
l Low gate charge and capacitances  
- easier to drive  
PD  
TJ  
TC = 25°C  
500  
W
-55 ... +150  
°C  
- faster switching  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
l International standard packages  
l Low RDS (on)  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
l Rated for unclamped Inductive load  
switching (UIS)  
Md  
Mounting torque  
TO-264  
0.4/6  
Nm/lb.in.  
rated  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
l Molding epoxies meet UL 94 V-0  
flammability classification  
Applications  
l
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
Symbol  
TestConditions  
Characteristic Values  
l
(TJ = 25°C, unless otherwise specified)  
l
min. typ. max.  
power supplies  
DC choppers  
l AC motor control  
VDSS  
VGS = 0 V, ID = 250uA  
900  
2.5  
V
l
VGS(th)  
VDS = VGS, ID = 4mA  
4.5 V  
l
Temperature and lighting controls  
IGSS  
VGS = ±20 V, VDS = 0  
±100 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
100 mA  
2 mA  
l
PLUS 247TM package for clip or spring  
TJ = 125°C  
mounting  
Space savings  
l
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
0.45 W  
l
High power density  
© 2000 IXYS All rights reserved  
98679B (08/00)  
IXFK 24N90Q  
IXFX 24N90Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS247TM Outline  
VDS = 10 V; ID = 0.5 • ID25  
Note 1  
16  
22  
S
Ciss  
Coss  
Crss  
5900  
650  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
130  
td(on)  
tr  
td(off)  
tf  
25  
21  
60  
12  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 W (External),  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3-Source(Emitter)  
4 - Drain (Collector)  
Qg(on)  
Qgs  
170  
38  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Qgd  
75  
RthJC  
RthCK  
0.26 K/W  
K/W  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
0.15  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
L
L1  
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
3.81  
4.32  
Symbol  
TestConditions  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IS  
VGS = 0 V  
24  
96  
A
A
TO-264 AA Outline  
ISM  
Repetitive;  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V, Note 1  
1.5  
V
trr  
250 ns  
IF = IS,-di/dt = 100 A/ms, VR = 100 V  
QRM  
IRM  
1.4  
9
mC  
A
Millimeter  
Dim.  
Inches  
Min.  
Max.  
Min.  
Max.  
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
D
E
e
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
5.46BSC  
.215BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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