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IXFX360N15T2

型号：

IXFX360N15T2

描述：

GigaMOS TrenchT2 HiperFET功率MOSFET[ GigaMOS TrenchT2 HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

179 K

下载PDF手册
Advance Technical Information  
GigaMOSTM TrenchT2  
HiperFETTM  
Power MOSFET  
VDSS = 150V  
ID25 = 360A  
RDS(on) ≤ 4.0mΩ  
IXFK360N15T2  
IXFX360N15T2  
trr  
≤ 150ns  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
150  
150  
V
V
D
S
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
PLUS247 (IXFX)  
ID25  
IL(RMS)  
IDM  
TC = 25°C (Chip Capability)  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
360  
160  
900  
A
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
100  
TBD  
A
J
(TAB)  
PD  
TC = 25°C  
1670  
20  
W
G = Gate  
D
= Drain  
dV/dt  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
V/ns  
S = Source  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z International Standard Packages  
z High Current Handling Capability  
z Fast Intrinsic Diode  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
z Avalanche Rated  
20..120 /4.5..27  
z
Low RDS(on)  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
150  
V
V
z
2.5  
5.0  
Synchronous Recification  
z DC-DC Converters  
z Battery Chargers  
± 200 nA  
50 μA  
z Switched-Mode and Resonant-Mode  
Power Supplies  
z DC Choppers  
z AC Motor Drives  
IDSS  
TJ = 150°C  
5
mA  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
4.0 mΩ  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100181(08/09)  
IXFK360N15T2  
IXFX360N15T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXFK) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
140  
230  
S
Ciss  
Coss  
Crss  
47.5  
3060  
665  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
50  
170  
115  
265  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A  
RG = 1Ω (External)  
Millimeter  
Inches  
Dim.  
Min.  
Max.  
Min.  
Max.  
Qg(on)  
Qgs  
715  
185  
200  
nC  
nC  
nC  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
RthJC  
RthCS  
0.09 °C/W  
°C/W  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
E
e
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.15  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Source-Drain Diode  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
PLUS 247TM (IXFX) Outline  
IS  
VGS = 0V  
360  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 60A, VGS = 0V, Note 1  
1440  
1.2  
trr  
150  
ns  
μC  
A
IF = 160A, -di/dt = 100A/μs  
VR = 60V, VGS = 0V  
QRM  
IRM  
0.50  
9.00  
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK360N15T2  
IXFX360N15T2  
Fig. 1. Output Characteristics  
@ TJ = 25ºC  
Fig. 2. Extended Output Characteristics  
@ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 10V  
10V  
8V  
7V  
7V  
6V  
6V  
5V  
5V  
4V  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ TJ = 150ºC  
Fig. 4. RDS(on) Normalized to ID = 180A Value vs.  
Junction Temperature  
350  
300  
250  
200  
150  
100  
50  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
VGS = 10V  
8V  
7V  
I D = 360A  
6V  
5V  
I D = 180A  
4V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 180A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
180  
160  
140  
120  
100  
80  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
External Lead Current Limit  
TJ = 175ºC  
60  
40  
TJ = 25ºC  
20  
0
0
50  
100  
150  
200  
250  
300  
350  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFK360N15T2  
IXFX360N15T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
450  
400  
350  
300  
250  
200  
150  
100  
50  
TJ = - 40ºC  
TJ = 150ºC  
25ºC  
25ºC  
- 40ºC  
150ºC  
60  
40  
20  
0
0
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 75V  
I
I
D = 180A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
100  
200  
300  
400  
500  
600  
700  
800  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1,000.0  
100.0  
10.0  
1.0  
R
Limit  
DS(on)  
25µs  
C
iss  
100µs  
External Lead Limit  
C
oss  
rss  
1ms  
10ms  
T
= 175ºC  
= 25ºC  
J
C
100ms  
DC  
T
C
= 1 MHz  
5
f
Single Pulse  
0.1  
1
10  
100  
1,000  
0
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF:F_360N15T2(9V)8-19-09  
IXFK360N15T2  
IXFX360N15T2  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
340  
300  
260  
220  
180  
140  
100  
300  
260  
220  
180  
140  
100  
60  
RG = 1ꢀ , VGS = 10V  
DS = 75V  
RG = 1Ω , VGS = 10V  
VDS = 75V  
V
I D = 100A  
TJ = 25ºC  
TJ = 125ºC  
I D = 200A  
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
700  
600  
500  
400  
300  
200  
100  
0
220  
700  
600  
500  
400  
300  
200  
100  
0
210  
t f  
t
d(off) - - - -  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 75V  
200  
180  
160  
140  
120  
100  
80  
180  
150  
120  
90  
RG = 1Ω, VGS = 10V  
VDS = 75V  
V
I D = 200A  
I D = 200A  
I D = 100A  
60  
I D = 100A  
30  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
900  
800  
700  
600  
500  
400  
300  
200  
100  
900  
800  
700  
600  
500  
400  
300  
200  
100  
700  
600  
500  
400  
300  
200  
100  
0
240  
220  
200  
180  
160  
140  
120  
100  
t f  
t
d(off) - - - -  
RG = 1ꢀ, VGS = 10V  
DS = 75V  
tf  
td(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 75V  
V
V
I D = 200A, 100A  
TJ = 125ºC  
TJ = 25ºC  
1
2
3
4
5
6
7
8
9
10  
40  
60  
80  
100  
120  
140  
160  
180  
200  
ID - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFK360N15T2  
IXFX360N15T2  
Fig. 19. Maximium Transient Thermal Impedance  
.sadgsfgsf  
0.200  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF:F_360N15T2(9V)8-19-09  
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