HiPerRFTM
IXFX 55N50F VDSS = 500 V
IXFK 55N50F ID25 = 55 A
Power MOSFETs
R
DS(on) = 85 mΩ
F-Class: MegaHertz Switching
N-ChannelEnhancementMode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
trr ≤ 250 ns
PLUS247TM (IXFX)
Symbol
Test Conditions
Maximum Ratings
(TAB)
G
D
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
TO-264 AA (IXFK)
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
55
220
55
A
A
A
G
D
S
(TAB)
G = Gate
D = Drain
TAB = Drain
EAR
EAS
TC = 25°C
TC = 25°C
60
3.0
mJ
J
S = Source
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
10
V/ns
Features
●
RF capable Mosfets
PD
TJ
TC = 25°C
560
W
● Ruggedpolysilicongatecellstructure
●
-55 ... +150
°C
Double metal process for low gate
resistance
TJM
150
-55 ... +150
°C
°C
Tstg
● Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
●
Low package inductance
- easy to drive and to protect
Md
Mountingtorque
TO-264
0.4/6 Nm/lb.in.
● Fast intrinsic rectifier
Weight
PLUS 247
TO-264
6
10
g
g
Applications
● DC-DC converters
Symbol
VDSS
Test Conditions
Characteristic Values
● Switched-mode and resonant-mode
power supplies, >500kHz switching
● DC choppers
(TJ = 25°C, unless otherwise specified)
min. typ. max.
● Pulsegeneration
● Laser drivers
VGS = 0 V, ID = 1mA
500
V
VGS(th)
IGSS
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
3.0
5.5 V
±200 nA
Advantages
● PLUS 247TM package for clip or spring
mounting
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100 µA
3 mA
● Space savings
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
85 mΩ
● High power density
98855-A (9/02)
© 2002 IXYS All rights reserved
