HiPerFETTM
Power MOSFET
IXFH22N55 VDSS = 550 V
ID (cont) = 22 A
RDS(on) = 0.27 W
N-Channel Enhancement Mode
Avlanche Rated, High dv/dt, Low trr
trr
£ 250 ns
Preliminary data
Symbol
TestConditions
MaximumRatings
TO-247 AD
VDSS
VDGR
TJ = 25°C to 150°C
550
550
V
V
TJ = 25°C to 150°C; RGS = 1 MW
VGS
Continuous
Transient
±20
±30
V
V
D (TAB)
VGSM
ID25
IDM
IAR
TC = 25°C
22
88
22
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
G = Gate,
S = Source,
D = Drain,
TAB = Drain
EAR
TC = 25°C
30
5
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
PD
TC = 25°C
300
W
Features
TJ
-55 ... +150
150
°C
°C
°C
°C
• Internationalstandardpackages
JEDEC TO-247 AD
TJM
Tstg
TL
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
-55 ... +150
300
1.6 mm (0.063 in) from case for 10 s
Mountingtorque
Md
1.13/10 Nm/lb.in.
• Low package inductance (< 5 nH)
- easy to drive and to protect
• Fast intrinsic Rectifier
Weight
6
g
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
• Power Factor Control Circuits
• UninterruptiblePowerSupplies(UPS)
• Battery chargers
min. typ. max.
• Switched-modeandresonant-mode
powersupplies
• DC choppers
VDSS
VGS = 0 V, ID = 250 mA
550
2
V
V
VGS(th)
VDS = VGS, ID = 4 mA
4.5
• Temperatureandlightingcontrols
• Low voltage relays
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
250 mA
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
1
mA
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
• Space savings
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.27
W
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
94527A (10/95)
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