HiPerFETTM
VDSS
ID25
RDS(on)
IXFK 110 N06
IXFK 105 N07
IXFK 110 N07
60V 110 A 6 mW
70V 105 A 7 mW
70V 110 A 6 mW
trr £ 250 ns
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
VDSS
TestConditions
MaximumRatings
TO-264 AA (IXFK)
TJ = 25°C to 150°C
N07
N06
N07
N06
70
60
70
60
V
V
V
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
ID130
IDM
TC = 25°C, die capability
110
76
600
100
A
A
A
A
TC = 130°C, limited by external leads
TC = 25°C, pulse width limited by TJM
TC = 25°C
G
(TAB)
D
S
IAR
EAR
EAS
TC = 25°C
TC = 25°C
30
2
mJ
J
dv/dt
IS £ I , di/dt £ 100 A/ms, VDD £ VDSS
,
5
V/ns
TJ £ D1M50°C, RG = 2 W
Features
PD
TC = 25°C
500
W
• Internationalstandardpackages
• JEDECTO-264 AA,epoxymeet
UL94V-0,flammabilityclassification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
• Low package inductance
• Fast intrinsic Rectifier
Md
Mountingtorque
Terminalconnectiontorque
0.9/6
-
Nm/lb.in.
Nm/lb.in.
Applications
Weight
Symbol
10
g
• DC-DC converters
• Synchronousrectification
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS
= 0 V, ID = 1 mA
N06
N07
60
70
2
V
V
V
• Temperatureandlightingcontrols
• Low voltage relays
VGS (th)
IGSS
VDS
VGS
= VGS, ID = 8 mA
4
= ±20 VDC, VDS = 0
±200 nA
400 mA
Advantages
IDSS
VDS
VGS
= 0.8 • VDSS
= 0 V
TJ = 25°C
TJ = 125°C
2
mA
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS
Note 2
= 10 V, ID = 0.5 • ID25
110N06/110N07
105N07
6
7
mW
mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92802I(10/97)
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