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XTR115U

型号:

XTR115U

描述:

4-20mA电流环变送器[ 4-20mA CURRENT LOOP TRANSMITTERS ]

品牌:

BB[ BURR-BROWN CORPORATION ]

页数:

7 页

PDF大小:

84 K

®
XTR116  
XTR115  
XTR116  
XTR115  
For most current data sheet and other product  
information, visit www.burr-brown.com  
4-20mA CURRENT LOOP TRANSMITTERS  
FEATURES  
APPLICATIONS  
LOW QUIESCENT CURRENT: 200µA  
5V REGULATOR FOR EXTERNAL CIRCUITS  
VREF FOR SENSOR EXCITATION:  
2-WIRE, 4-20mA CURRENT LOOP  
TRANSMITTER  
SMART TRANSMITTER  
INDUSTRIAL PROCESS CONTROL  
TEST SYSTEMS  
XTR115: 2.5V  
XTR116: 4.096V  
LOW SPAN ERROR: 0.05%  
COMPATIBLE WITH HART MODEM  
CURRENT AMPLIFIER  
LOW NONLINEARITY ERROR: 0.003%  
WIDE LOOP SUPPLY RANGE: 7.5V to 36V  
SO-8 PACKAGE  
VOLTAGE-TO-CURRENT AMPLIFIER  
used for offsetting or to excite transducers. A current  
return pin (IRET) senses any current used in external  
circuitry to assure an accurate control of the output  
current.  
DESCRIPTION  
The XTR115 and XTR116 are precision current out-  
put converters designed to transmit analog 4-to-20mA  
signals over an industry standard current loop. They  
provide accurate current scaling and output current  
limit functions.  
The XTR115 is a fundamental building block of  
smart sensors using 4-to-20mA current transmission.  
The XTR115 and XTR116 are specified for opera-  
tion over the extended industrial temperature range,  
–40°C to +85°C.  
The on-chip voltage regulator (5V) can be used to  
power external circuitry. A precision on-chip VREF  
(2.5V for XTR115 and 4.096V for XTR116) can be  
XTR115  
XTR116  
VREG  
+5V  
Regulator  
V+  
7
+5V  
8
VREF  
1
Voltage  
Reference  
XTR115: 2.5V  
XTR116: 4.096V  
VLOOP  
B
6
RIN  
IIN  
2
RL  
A1  
+
E
5
VIN  
RLIM  
3
IRET  
100 VIN  
R1  
2.475k  
R2  
25Ω  
IO  
=
RIN  
4
I = 100 • IIN  
International Airport Industrial Park  
Mailing Address: PO Box 11400, Tucson, AZ 85734  
Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706  
• Tel: (520) 746-1111  
Twx: 910-952-1111 Internet: http://www.burr-brown.com/  
Cable: BBRCORP Telex: 066-6491  
FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132  
©2000 Burr-Brown Corporation  
PDS-1582A  
Printed in U.S.A. January, 2000  
SPECIFICATIONS  
At TA = +25°C, V+ = 24V, RIN = 20k, and TIP29C external transistor, unless otherwise noted.  
XTR115U  
XTR116U  
XTR115UA  
XTR116UA  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
MIN  
TYP  
MAX  
UNITS  
OUTPUT  
Output Current Equation  
Output Current, Linear Range  
Over-Scale Limit  
IO  
IO = IIN • 100  
0.25  
25  
mA  
mA  
mA  
ILIM  
IMIN  
32  
0.2  
Under-Scale Limit  
IREG = 0, IREF = 0  
0.25  
SPAN  
Span (Current Gain)  
Error (1)  
vs Temperature  
Nonlinearity  
S
100  
±0.05  
±3  
A/A  
%
ppm/°C  
%
IIN = 250µA to 25mA  
TA = –40°C to +85°C  
IIN = 250µA to 25mA  
±0.2  
±20  
±0.01  
±0.4  
±0.02  
±0.003  
INPUT  
Offset Voltage (Op Amp)  
vs Temperature  
vs Supply Voltage, V+  
Bias Current  
vs Temperature  
Noise: 0.1Hz to 10Hz  
VOS  
IIN = 40µA  
TA = –40°C to +85°C  
V+ = 7.5V to 36V  
±100  
±0.7  
±0.1  
–35  
150  
0.6  
±250  
±3  
±2  
±500  
±6  
µV  
µV/°C  
µV/V  
nA  
pA/°C  
µVp-p  
IB  
en  
DYNAMIC RESPONSE  
Small Signal Bandwidth  
Slew Rate  
CLOOP = 0, RL = 0  
380  
3.2  
kHz  
mA/µs  
(2)  
VREF  
XTR115  
XTR116  
2.5  
4.096  
±0.05  
±20  
±1  
±100  
10  
16  
V
V
%
Voltage Accuracy  
vs Temperature  
vs Supply Voltage, V+  
vs Load  
Noise: 0.1Hz to 10Hz  
Short-Circuit Current  
IREF = 0  
±0.25  
±35  
±10  
±0.5  
±75  
TA = –40°C to +85°C  
V+ = 7.5V to 36V  
IREF = 0mA to 2.5mA  
ppm/°C  
ppm/V  
ppm/mA  
µVp-p  
mA  
(2)  
VREG  
Voltage  
5
±0.05  
±0.1  
1
V
V
Voltage Accuracy  
vs Temperature  
vs Supply Voltage, V+  
vs Output Current  
Short-Circuit Current  
IREG = 0  
TA = –40°C to +85°C  
V+ = 7.5V to 36V  
±0.1  
mV/°C  
mV/V  
See Typical Curves  
12  
mA  
POWER SUPPLY  
Specified  
Voltage Range  
Quiescent Current  
Over Temperature, –40°C to +85°C  
V+  
+24  
V
V
µA  
µA  
+7.5  
+36  
250  
300  
200  
240  
TEMPERATURE RANGE  
Specification  
Operating  
–40  
–55  
–55  
+85  
+125  
+125  
°C  
°C  
°C  
Storage  
Thermal Resistance  
θJA  
150  
°C/W  
Specifications the same as XTR115U and XTR116U.  
NOTES: (1) Does not include initial error or TCR of RIN. (2) Voltage measured with respect to IRET pin.  
®
2
XTR115, XTR116  
PIN CONFIGURATION  
ABSOLUTE MAXIMUM RATINGS(1)  
Power Supply, V+ (referenced to IO pin) .......................................... 40V  
Input Voltage (referenced to IRET pin) ........................................ 0V to V+  
Output Current Limit ............................................................... Continuous  
VREG, Short-Circuit.................................................................. Continuous  
VREF, Short-Circuit .................................................................. Continuous  
Operating Temperature ................................................ –55°C to +125°C  
Storage Temperature Range ....................................... –55°C to +125°C  
Lead Temperature (soldering, 10s).............................................. +300°C  
Junction Temperature ................................................................... +165°C  
Top View  
SO-8  
1
2
3
4
VREF  
IIN  
IRET  
IO  
8
7
6
5
VREG  
V+  
B (Base)  
E (Emitter)  
NOTE: (1) Stresses above these ratings may cause permanent damage.  
Exposure to absolute maximum conditions for extended periods may degrade  
device reliability.  
ELECTROSTATIC  
DISCHARGE SENSITIVITY  
This integrated circuit can be damaged by ESD. Burr-Brown  
recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling  
and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation  
to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric  
changes could cause the device not to meet its published  
specifications.  
PACKAGE/ORDERING INFORMATION  
PACKAGE  
SPECIFIED  
DRAWING  
NUMBER  
TEMPERATURE  
RANGE  
PACKAGE  
MARKING  
ORDERING  
NUMBER(1)  
TRANSPORT  
MEDIA  
PRODUCT  
PACKAGE  
XTR115UA  
SO-8  
182  
"
182  
"
–40°C to +85°C  
XTR115UA  
XTR115UA  
Rails  
"
XTR115U  
"
"
SO-8  
"
"
"
XTR115UA/2K5  
Tape and Reel  
–40°C to +85°C  
XTR115U  
XTR115U  
Rails  
"
"
XTR115U/2K5  
Tape and Reel  
XTR116UA  
SO-8  
182  
"
182  
"
–40°C to +85°C  
XTR116UA  
XTR116UA  
Rails  
"
XTR116U  
"
"
SO-8  
"
"
"
XTR116UA/2K5  
Tape and Reel  
–40°C to +85°C  
XTR116U  
XTR116U  
Rails  
"
"
XTR116U/2K5  
Tape and Reel  
NOTES: (1) Models with a slash (/) are available only in Tape and Reel in the quantities indicated (e.g., /2K5 indicates 2500 devices per reel). Ordering 2500 pieces  
of “XTR115UA/2K5” will get a single 2500-piece Tape and Reel.  
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes  
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant  
any BURR-BROWN product for use in life support devices and/or systems.  
®
3
XTR115, XTR116  
TYPICAL PERFORMANCE CURVES  
At TA = +25°C, V+ = 24V, RIN = 20k, and TIP29C external transistor, unless otherwise noted.  
CURRENT GAIN vs FREQUENCY  
260  
QUIESCENT CURRENT vs TEMPERATURE  
40  
240  
(V+) = 36V  
220  
200  
180  
160  
COUT = 0  
RL = 0Ω  
30  
20  
10  
(V+) = 24V  
COUT = 10nF  
RL = 250Ω  
(V+) = 7.5V  
10k  
100k  
1M  
125  
4
–75  
–50  
–25  
0
25  
50  
75  
100  
125  
Frequency (Hz)  
Temperature (°C)  
REFERENCE VOLTAGE vs TEMPERATURE  
OVER-SCALE CURRENT vs TEMPERATURE  
With External Transistor  
0.1  
0
34  
33  
32  
31  
30  
29  
28  
V+ = 36V  
V+ = 7.5V  
V+ = 24V  
–0.1  
–0.2  
–0.3  
–75  
–50  
–25  
0
25  
50  
75  
100  
–75  
–50  
–25  
0
25  
50  
75  
100  
125  
Temperature (°C)  
Temperature (°C)  
V
REG VOLTAGE vs VREG CURRENT  
5.5  
5.0  
4.5  
+125°C  
–55°C  
–55°C  
+25°C  
+25°C  
Sinking  
Current  
Sourcing  
Current  
+125°C  
–1  
0
1
2
3
IREG Current (mA)  
®
4
XTR115, XTR116  
and upward. Full-scale inputs greater than 0.5V are recom-  
mend to minimize the effect of offset voltage and drift of A1.  
APPLICATIONS INFORMATION  
The XTR115 and XTR116 are identical devices except for  
the reference voltage output, pin 1. This voltage is available  
for external circuitry and is not used internally. Further  
discussions that apply to both devices will refer to the  
“XTR115/6.”  
EXTERNAL TRANSISTOR  
The external transistor, Q1, conducts the majority of the full-  
scale output current. Power dissipation in this transistor can  
approach 0.8W with high loop voltage (40V) and 20mA  
output current. The XTR115/6 is designed to use an external  
transistor to avoid on-chip thermal-induced errors. Heat  
produced by Q1 will still cause ambient temperature changes  
that can affect the XTR115/6. To minimize these effects,  
locate Q1 away from sensitive analog circuitry, including  
XTR115/6. Mount Q1 so that heat is conducted to the  
outside of the transducer housing.  
Figure 1 shows basic circuit connections with representative  
simplified input circuitry. The XTR115/6 is a two-wire  
current transmitter. Its input signal (pin 2) controls the output  
current. A portion of this current flows into the V+ power  
supply, pin 7. The remaining current flows in Q1. External  
input circuitry connected to the XTR115/6 can be powered  
from VREG or VREF. Current drawn from these terminals  
must be returned to IRET, pin 3. This IRET pin is a “local  
ground” for input circuitry driving the XTR115/6.  
The XTR115/6 is designed to use virtually any NPN transis-  
tor with sufficient voltage, current and power rating. Case  
style and thermal mounting considerations often influence  
the choice for any given application. Several possible choices  
are listed in Figure 1. A MOSFET transistor will not improve  
the accuracy of the XTR115/6 and is not recommended.  
The XTR115/6 is a current-input device with a gain of 100.  
A current flowing into pin 2 produces IO = 100 • IIN. The  
input voltage at the IIN pin is zero (referred to the IRET pin).  
A voltage input is created with an external input resistor, as  
shown. Common full-scale input voltages range from 1V  
XTR115  
XTR116  
IREG  
IO  
5V  
VREG  
8
+5V  
Regulator  
V+  
7
XTR115: 2.5V  
XTR116: 4.096V  
IREF  
VREF  
1
Voltage  
Reference  
VLOOP  
RIN  
20k  
B
6
IIN  
10nF  
Q1  
VIN  
IIN  
2
Input  
Circuitry  
RL  
A1  
E
5
RLIM  
3
IRET  
R1  
2.475kΩ  
R2  
25Ω  
All return current  
from IREG and IREF  
IO  
4
I = 100 • IIN  
For IO = 4mA to 20mA  
IIN = 40µA to 200µA  
With RIN = 20kΩ  
VIN = 0.8V to 4V  
Possible choices for Q1 (see text).  
TYPE  
PACKAGE  
2N4922  
TIP29C  
TIP31B  
TO-225  
TO-220  
TO-220  
FIGURE 1. Basic Circuit Connections.  
®
5
XTR115, XTR116  
MINIMUM-SCALE CURRENT  
MAXIMUM OUTPUT CURRENT  
The quiescent current of the XTR115/6 (typically 200µA)  
is the lower limit of its output current. Zero input current  
(IIN = 0) will produce an IO equal to the quiescent current.  
Output current will not begin to increase until IIN > IQ /100.  
Current drawn from VREF or VREG will add to this minimum  
output current. This means that more than 3.7mA is avail-  
able to power external circuitry while still allowing the  
output current to go below 4mA.  
The XTR115/6 provides accurate, linear output up to 25mA.  
Internal circuitry limits the output current to approximately  
32mA to protect the transmitter and loop power/measure-  
ment circuitry.  
It is possible to extend the output current range of the  
XTR115/6 by connecting an external resistor from pin 3 to  
pin 5, to change the current limit value. Since all output  
current must flow through internal resistors, it is possible to  
damage with excessive current. Output currents greater than  
45mA may cause permanent damage.  
OFFSETTING THE INPUT  
A low scale of 4mA is produced by creating a 40µA input  
current. This can be created with the proper value resistor  
from VREF (Figure 2), or by generating offset in the input  
drive circuitry.  
XTR115  
XTR116  
VREG  
VREF  
RIN  
VO  
D/A  
XTR115  
VREG  
XTR115  
XTR116  
VREG  
VREF  
IIN  
2.5V  
40µA  
VREF  
Voltage  
Reference  
R0  
62.5k  
Digital  
Control  
IO  
D/A  
Optical  
Isolation  
IIN  
IRET  
A1  
0 to 160µA  
XTR115  
XTR116  
5V  
VREG  
RIN  
Filter  
PWM  
Out  
Digital  
Control  
IRET  
µC  
R1  
2.475kΩ  
Optical  
Isolation  
IRET  
FIGURE 2. Creating Low-Scale Offset.  
FIGURE 3. Digital Control Methods.  
®
6
XTR115, XTR116  
REVERSE-VOLTAGE PROTECTION  
Most surge protection zener diodes have a diode character-  
istic in the forward direction that will conduct excessive  
current, possibly damaging receiving-side circuitry if the  
loop connections are reversed. If a surge protection diode is  
used, a series diode or diode bridge should be used for  
protection against reversed connections.  
The XTR115/6 low compliance voltage rating (7.5V) per-  
mits the use of various voltage protection methods without  
compromising operating range. Figure 4 shows a diode  
bridge circuit which allows normal operation even when the  
voltage connection lines are reversed. The bridge causes a  
two diode drop (approximately 1.4V) loss in loop supply  
voltage. This results in a compliance voltage of approxi-  
mately 9V—satisfactory for most applications. A diode can  
be inserted in series with the loop supply voltage and the V+  
pin to protect against reverse output connection lines with  
only a 0.7V loss in loop supply voltage.  
RADIO FREQUENCY INTERFERENCE  
The long wire lengths of current loops invite radio frequency  
interference. RF can be rectified by the input circuitry of the  
XTR115/6 or preceding circuitry. This generally appears as  
an unstable output current that varies with the position of  
loop supply or input wiring.  
OVER-VOLTAGE SURGE PROTECTION  
Interference may also enter at the input terminals. For  
integrated transmitter assemblies with short connection to  
the sensor, the interference more likely comes from the  
current loop connections.  
Remote connections to current transmitters can sometimes be  
subjected to voltage surges. It is prudent to limit the maximum  
surge voltage applied to the XTR115/6 to as low as practical.  
Various zener diode and surge clamping diodes are specially  
designed for this purpose. Select a clamp diode with as low a  
voltage rating as possible for best protection. For example, a  
36V protection diode will assure proper transmitter operation  
at normal loop voltages, yet will provide an appropriate level  
of protection against voltage surges. Characterization tests on  
several production lots showed no damage with loop supply  
voltages up to 65V.  
8
Maximum VPS must be  
less than minimum  
voltage rating of zener  
diode.  
V+  
7
6
VREG  
1
VREF  
RIN  
2
3
0.01µF  
XTR115  
XTR116  
1N4148  
Diodes  
B
IIN  
Q1  
(1)  
D1  
VIN  
E
RL  
VPS  
5
4
IRET  
IO  
The diode bridge causes  
a 1.4V loss in loop supply  
voltage.  
NOTE: (1) Zener Diode 36V: 1N4753A or Motorola  
P6KE39A. Use lower voltage zener diodes with loop  
power supply voltages less than 30V for increased  
protection. See “Over-Voltage Surge Protection.”  
FIGURE 4. Reverse Voltage Operation and Over-Voltage Surge Protection.  
®
7
XTR115, XTR116  
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