HiPerFETTM
VDSS
ID25
RDS(on)
IXFK33N50 500V 33 A 0.16 W
IXFK35N50 500V 35 A 0.15 W
trr £ 250 ns
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Preliminarydata
TO-264 AA
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
500
500
V
TJ = 25°C to 150°C; RGS = 1 MW
V
G
VGS
Continuous
Transient
±20
±30
V
V
D (TAB)
D
S
VGSM
ID25
IDM
IAR
TC = 25°C
33N50
35N50
33
35
A
A
G = Gate
S = Source
D = Drain
TAB = Drain
TC = 25°C,
pulse width limited by TJM
33N50
35N50
132
140
A
A
TC = 25°C
33N50
35N50
30
35
A
A
EAS
EAR
ID = 32 A
2.5
45
J
TC = 25°C
mJ
Features
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
,
5
V/ns
TJ £ 150°C, RG = 2 W
· Internationalstandardpackages
· Molding epoxies meet UL 94 V-0
flammabilityclassification
· Low RDS (on) HDMOSTM process
· Unclamped Inductive Switching (UIS)
rated
PD
TC = 25°C
416
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
· Fast intrinsic rectifier
TL
1.6 mm (0.063 in) from case for 10 s
Mountingtorque
300
°C
Md
0.9/6
10
Nm/lb.in.
g
Applications
Weight
· DC-DC converters
· Synchronousrectification
· Battery chargers
· Switched-modeandresonant-mode
powersupplies
· DC choppers
· Temperatureandlightingcontrols
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min.
typ.
0.102
-0.206
max.
VDSS
VGS = 0 V, ID = 1 mA
VDSS temperature coefficient
500
V
%/K
VGS(th)
VDS = VGS, ID = 4 mA
VGS(th) temperature coefficient
2
4
V
%/K
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200
nA
Advantages
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
200
2
mA
mA
· Easy to mount
· Space savings
· High power density
RDS(on)
VGS = 10 V, ID = 16.5A
33N50
35N50
0.16
0.15
W
W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97517D(07/00)
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